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DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 08 2004 Jan 13
DISCRETE SEMICONDUCTORS
BCV26; BCV46
PNP Darlington transistors
2004 Jan 13 2
NXP Semiconductors Product data sheet
PNP Darlington transistors BCV26; BCV46
FEATURES
High current (max. 500 mA)
Low voltage (max. 60 V)
Very high DC current gain (min . 10 000).
APPLICATIONS
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BCV26 FD*
BCV46 FE*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
1
3
2
MAM299
13
2
TR2
TR1
Top view
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BCV26 plastic surface mounted pa ckage; 3 leads SOT23
BCV46
2004 Jan 13 3
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV26; BCV46
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BCV26 40 V
BCV46 80 V
VCES collector-emitter voltage VBE = 0
BCV26 30 V
BCV46 60 V
VEBO emitter-base voltage open collector 10 V
ICcollector current (DC) 500 mA
ICM peak collector current 800 mA
IBbase current (DC) 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 13 4
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV26; BCV46
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current
BCV26 IE = 0; VCB = 30 V 100 nA
BCV46 IE = 0; VCB = 60 V 100 nA
IEBO emitter cut-off current IC = 0; VEB = 10 V 100 nA
hFE DC current gain IC = 1 mA; VCE = 5 V; (see Fig.2)
BCV26 4 000
BCV46 2 000
DC current gain IC = 10 mA; VCE = 5 V ; (see Fig.2)
BCV26 10 000
BCV46 4 000
DC current gain IC = 100 mA; VCE = 5 V; (see Fig.2)
BCV26 20 000
BCV46 10 000
VCEsat collector-emitter saturation
voltage IC = 100 mA; IB = 0.1 mA 1 V
VBEsat base-emitt er saturation voltage IC = 100 mA; IB = 0.1 mA 1.5 V
VBEon base-emitter on-state voltage IC = 10 mA; VCE = 5 V 1.4 V
fTtransition freque ncy IC = 30 mA; VCE = 5 V; f = 100 MHz 220 MHz
Fig.2 DC current gain; typical values.
VCE = 2 V.
handbook, full pagewidth
0
100000
20000
40000
60000
80000
hFE
MGD836
110 IC (mA)
102103
2004 Jan 13 5
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV26; BCV46
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 13 6
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV26; BCV46
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp7 Date of release: 2004 Jan 13 Document orde r number: 9397 750 12401