2N6497 Silicon NPN Transistor Power Amp, High Voltage, Switch TO-220 Type Package Description: The 2N6497 is a silicon NPN transistor in a TO-220 type package designed for high-voltage inverters, switching regulators and line-operated amplifier applications. Especially well suited for switching power supply applications. Features: D High Collector-Emitter Sustaining Voltage: VCEO(sus) = 250V (Min) D Excellent DC Current Gain: hFE = 10-75 @ IC = 2.5A D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1V (Max) @ IC = 2.5A Absolute Maximum Ratings: (Note 1) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56C/W Note 1. Stresses exceeding Absolute Maximum Ratings may damage the device. Absolute Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 250 - - V VCE = 350V, VBE(off) = 1.5V - - 1.0 mA VCE = 350V, VBE(off) = 1.5V, TC = +100C - - 10 mA VEB = 6V, IC = 0 - - 1.0 mA OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 25mA, IB = 0, Note 2 ICEX IEBO Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 2.5A, VCE = 10V 10 - 75 IC = 5A, VCE = 10V 3 - - IC = 2.5A, IB = 500mA - - 1.0 V IC = 5A, IB = 2A - - 5.0 V IC = 2.5A, IB = 500mA - - 1.5 V IC = 5A, IB = 2A - - 2.5 V IC = 250mA, VCE = 10V, f = 1MHz 5 - - MHz VCB = 10V, IE = 0, f = 1kHz - - 150 pF VCC = 125V, IC = 2.5A, IB1 = 500mA VCC = 125V, IC = 2.5A, IB1 = IB2 = 500mA, VBE = 5V - 0.4 1.0 s - 1.4 2.5 s VCC = 125V, IC = 2.5A, IB1 = IB2 = 500mA - 0.45 1.0 s ON Characteristics (Note 2) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Dynamic Characteristics Current Gain-Bandwidth Product fT Output Capacitance Cob Switching Characteristics Rise Time tr Storage Time ts Fall Time tf Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab