2N6497
Silicon NPN Transistor
Power Amp, High Voltage, Switch
TO−220 Type Package
Description:
The 2N6497 is a silicon NPN transistor in a TO−220 type package designed for high−voltage invert-
ers, switching regulators and line−operated amplifier applications. Especially well suited for switching
power supply applications.
Features:
DHigh Collector−Emitter Sustaining Voltage: VCEO(sus) = 250V (Min)
DExcellent DC Current Gain: hFE = 10−75 @ IC = 2.5A
DLow Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) @ IC = 2.5A
Absolute Maximum Ratings: (Note 1)
Collector−Emitter Voltage, VCEO 250V.....................................................
Collector−Base Voltage, VCB 350V........................................................
Emitter−Base Voltage, VEB 6V...........................................................
Collector Current, IC
Continuous 5A...................................................................
Peak 10A.......................................................................
Base Current, IB2A....................................................................
Total Power Dissipation (TC = +25C), PD80W............................................
Derate Above 25C 640mW/C.....................................................
Operating Junction Temperature Range, TJ−65 to +150C..................................
Storage Temperature Range, Tstg −65 to +150C..........................................
Thermal Resistance, Junction to Case, RthJC 1.56C/W.....................................
Note 1. Stresses exceeding Absolute Maximum Ratings may damage the device. Absolute Maximum
Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 25mA, IB = 0, Note 2 250 − − V
Collector Cutoff Current ICEX VCE = 350V, VBE(off) = 1.5V − − 1.0 mA
VCE = 350V, VBE(off) = 1.5V,
TC = +100C
− − 10 mA
Emitter Cutoff Current IEBO VEB = 6V, IC = 0 − − 1.0 mA
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain hFE IC = 2.5A, VCE = 10V 10 −75
IC = 5A, VCE = 10V 3− −
Collector−Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 500mA − − 1.0 V
IC = 5A, IB = 2A − − 5.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 500mA − − 1.5 V
IC = 5A, IB = 2A − − 2.5 V
Dynamic Characteristics
Current Gain−Bandwidth Product fTIC = 250mA, VCE = 10V, f = 1MHz 5− − MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 1kHz − − 150 pF
Switching Characteristics
Rise Time trVCC = 125V, IC = 2.5A,
IB1 = 500mA
−0.4 1.0 s
Storage Time tsVCC = 125V, IC = 2.5A,
IB1 = IB2 = 500mA, VBE = 5V
−1.4 2.5 s
Fall Time tfVCC = 125V, IC = 2.5A,
IB1 = IB2 = 500mA
−0.45 1.0 s
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
Emitter
.147 (3.75)
Dia Max
