SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: * Low Leakage Current : To gg=50nA (Max. ) Tppo7o0nA (Max. ) @ Vop=20V @ VaR=3V + Low Saturation Voltage : VoE(sat)=0-3V (Max. ) @ Ic=50mA, [p=5mA * Low Collector Output Capacitance : Copa4pF (Max.) @ Vep=5V - Complementary to YTS4126 MAXIMUM RATINGS (Ta=25C) YTS4124 Unit in mm +05 25-03 2.94 0.2 48 30 +) w 8) 2 3 2 o t 4 tEt L 8 3 =F se 1 3| ag ot os ao +1 +! s a 3 aq I | o l 1, EMITTER 2. BASE 3. COLLECTOR JEDEC 7 ELAJ sc-59 TOSHIBA 2-3FLA Weight: 0.012g CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Vcspo 30 V Collector-Emitter Voltage Vero 30 Vv Emitter-Base Voltage VEBO 5 Vv Collector Current I 200 mA Base Current Tp 50 mA Collector Power Dissipation Po 200 mW (Ta=25C) Derate Linearly 25C 1.6 mW/C (ation) aca] [ror Junction Temperature Tj 150 C Storage Temperature Range Tstg -55~ 150 C Marking 7 a 0 1103 Type NameYTS4124 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Icgo | Vcp=20V, Ip=0 - - 50 nA Emitter Cut-off Current Tego | VER=3V, Ic=0 - - 50 nA Collector-Emitter V(BR)CBO| Ic=10HA, Ig=0 40 - - v Breakdown Voltage , Collector-Emitter = = o| - - Vv Breakdown Voltage V(BR)CEO| Tc=1mA, Ip=0 3 EmitterBase = = - - Vv Breakdown Voltage V(BR)EBO| Ig=10uA, Ic=0 > hre(1) |Vce=1V, Ic=2mA 50 - 150 DC Current Gain hre(2) |Vce=1V, Ic=50mA 25 ~ - Collector-Emitter = =5n - - {0.3 Vv Saturation Voltage VoE(sat)|1c=50mA, Ig=5mA Base-Emitter _ _ 0.95 Vv VBE(sat)|Ic=50mA, Ip=5mA - - . Saturation Voltage Small Signal Forward Vog=20V, Ic=10mA hfe 2.5 - - Current Transer Ratio =100MHz Vog=20V, Ic=10mA iti , 250 - - MHz Transition Frequency fr =100MHz Collector Output Capacitance Cop Vop=oV, Ip=0, f=1MHz - - 4 pF Input Capacitance Cib Vep=0.5V, Ic=0, f=1MHz - - 8 pF Small Signal Current Gain hee Vce=LOV, Ic=2mA, f=1kHz 50 - 200 Vcr=5V, Ip=100 A Noise Figure NF CE > Cc - - 6 dB Rp=lkQ, f=10Hz +15. 7kHz 1104