SEMITRANSTM 2N
Superfast NPT-IGBT
Modules
SKM 145GB063DN
SKM 145GAL063DN
Features
  
  
 
!   ! !
 ""
   #$ %
 % &  "  '
& &%% % ()'
($ ! ) ) )
* + % , )- ""
. " "
  /0  "
 " 10 
Typical Applications
!  %  
!" " ! 
2
-) , , ",
 %3  #, /0
45
." ,
GB GAL
Absolute Maximum Ratings 6 17 8)  ! %"
Symbol Conditions Values Units
IGBT
()' 900 (
)6 17 ;0 8) 100 /<0 -
)=> 6 /  ?00 -
(' @ 10 (
,A  B'=-B C  <0 &&& D/70 /17 8)
( -) / & 1700 (
Inverse diode
*6 17 ;0 8) /?0 E0 -
*=> 6 /  ?00 -
*> 6 /0 F &F A6 /70 8) ;;0 -
Characteristics 6 17 8)  ! %"
Symbol Conditions min. typ. max. Units
IGBT
(' (' 6 ()' )6 ? - <7 77 97 (
)' (' 6 0 ()' 6 ()' A6 17 /17 8) 01 09 -
()'B A6 /17 8) /07 / (
)' (' 6 /7 ( A6 17 /17 8) G E? H
()' )6 /70 - (' 6 /7 (  , 1/ 1< 17 1; (
) " %! " ;< *
) (' 6 0 ()' 6 17 ( % 6 / >5 / *
) 09 *
)' 17 
=))ID''I &  6 17 /17 8) 0G7 / H
" ()) 6 ?00 ( )6 /70 - /?0 
= 6 =%% 6 /0 H A6 /17 8) 97 
"%% (' 6 @ /7 ( <70 
%<0 
' '%% ;7 77 J
Inverse diode
(*6 (') *6 /70 -F (' 60(FA6 17 /17 8) /77 /77 /E (
(B A6 /17  8) 0E (
A6 /17  8) 9 ; H
==> *6 /70 -F A6 /17 8) 7? -
K "L" 6 -LM ;/ M)
' (' 6 0 ( J
FWD
(*6 (') *6 /70 -F (' 60(A6 17 /17 8) /77 /77 /E (
(B A6 /17  8) 0E (
A6 /17  8) 9 ; H
==> *6 /70 -F A6 /17 8) 7? -
K "L" 6 0 -LM ;/ M)
' (' 6 ( J
Thermal characteristics
=A   0/; NL.
=AO  , O" 07 NL.
=  " 007 NL.
Mechanical data
> 4 >9 ? 7 
>  >7 17 7 
! /90
SKM 145GB063DN
1 14-06-2005 SEN © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 145GB063DN
2 14-06-2005 SEN © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 145GB063DN
3 14-06-2005 SEN © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532 Dimensions in mm
) O E?
 ) O E?
- ) O E< P O E?
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 145GB063DN
4 14-06-2005 SEN © by SEMIKRON