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HMHA281, HMHA2801 Series 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Features Description Compact 4-pin Package The HMHA281 and HMHA2801 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. - 2.4 mm Maximum Standoff Height - Half-pitch Leads for Optimum Board Space Savings Current Transfer Ratio: - HMHA281: 50% to 600% - HMHA2801: 80% to 600% - HMHA2801A: 80% to 160% - HMHA2801B: 130% to 260% - HMHA2801C: 200% to 400% Safety and Regulatory Approvals: - UL1577, 3,750 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage Applications Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver Schematic Package Outline ANODE 1 4 COLLECTOR CATHODE 2 3 EMITTER Figure 2. Package Outlines Figure 1. Schematic (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 www.fairchildsemi.com HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers June 2015 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I-IV I-III < 300 VRMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 4000 Vpeak External Creepage 5 mm External Clearance 5 mm mm DTI Distance Through Insulation (Insulation Thickness) 0.4 TS Case Temperature(1) 150 C Input Current(1) 200 mA 300 mW IS,INPUT PS,OUTPUT Output Power(1) RIO Insulation Resistance at TS, VIO = 500 V(1) > 109 Note: 1. Safety limit values - maximum values allowed in the event of a failure. (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 www.fairchildsemi.com 2 HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL PACKAGE TSTG Storage Temperature -55 to +125 C TOPR Operating Temperature -55 to +100 C Junction Temperature -40 to +125 C Total Device Power Dissipation @ TA = 25C 210 mW Derate Above 25C 2.1 mW/C IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1 s pulse, 300 pps) 1 A Reverse Input Voltage 6 V LED Power Dissipation @ TA = 25C 60 mW Derate Above 25C 0.6 mW/C Continuous Collector Current 50 mA VCEO Collector-Emitter Voltage 80 V VECO Emitter-Collector Voltage 7 V Detector Power Dissipation @ TA = 25C 150 mW Derate Above 25C 1.5 mW/C TJ PD EMITTER VR PD DETECTOR IC PD (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 www.fairchildsemi.com 3 HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Absolute Maximum Ratings TA = 25C Symbol Parameter Test Conditions Device Min. 1.0 Typ. Max. Unit 1.3 V 5 A INDIVIDUAL COMPONENT CHARACTERISTICS Emitter VF Forward Voltage IF = 10 mA All IR Reverse Current VR = 5 V All BVCEO Breakdown Voltage Collector to Emitter IC = 0.5 mA, IF = 0 All 80 BVECO Emitter to Collector IE = 100 A, IF = 0 All 7 ICEO Collector Dark Current VCE = 80 V, IF = 0 All CCE Capacitance VCE = 0 V, f = 1 MHz All Detector V 100 10 nA pF TRANSFER CHARACTERISTICS CTR DC Current Transfer Ratio IF = 5 mA, VCE = 5 V VCE (SAT) Saturation Voltage HMHA281 50 600 HMHA2801 80 600 HMHA2801A 80 160 HMHA2801B 130 260 HMHA2801C 200 400 IF = 8 mA, IC = 2.4 mA HMHA281 0.4 IF = 10 mA, IC = 2 mA HMHA2801, HMHA2801A, HMHA2801B, HMHA2801C 0.3 tr Rise Time (Non-Saturated) IC = 2 mA, VCE = 5 V, RL = 100 All tf Fall Time (Non-Saturated) IC = 2 mA, VCE = 5 V, RL = 100 All 1 Minute All % V 3 s 3 ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 3750 VACRMS www.fairchildsemi.com 4 HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Electrical Characteristics 100 100 VCE = 10 V IC - COLLECTOR CURRENT (mA) IF - FORWARD CURRENT (mA) TA = 25C 10 VCE = 5 V 10 VCE = 0.4 V 1 0.1 1 0.6 0.8 1.0 1.2 1.4 1 1.6 10 VF - FORWARD VOLTAGE (V) Figure 3. Forward Current vs. Forward Voltage Figure 4. Collector Current vs. Forward Current 2.0 1000 TA = 25C NORMALIZED CTR (IF) / CTR (5mA) IC /IF - CURRENT TRANSFER RATIO (%) 100 IF - FORWARD CURRENT (mA) VCE = 10 V VCE = 5 V 100 VCE = 0.4 V Normalized to: IF = 5 mA VCE = 5 V TA = 25C 1.5 IF = 5 mA 1.0 IF = 10 mA IF = 1 mA 0.5 IF = 0.5mA 0.0 -0.5 10 1 10 -40 100 -20 IF - FORWARD CURRENT (mA) 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Figure 5. Current Transfer Ratio vs. Forward Current Figure 6. Normalized CTR vs. Temperature 100 IC - COLLECTOR CURRENT (mA) VCE = 5 V IF = 25 mA 10 IF = 10 mA IF = 5 mA IF = 1 mA 1 IF = 0.5 mA 0.1 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Figure 7. Collector Current vs. Temperature (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 www.fairchildsemi.com 5 HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Typical Performance Characteristics 50 18 40 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) TA = 25C IF = 50 mA IF = 40 mA IF = 30 mA 30 IF = 20 mA IF = 10 mA 20 IF = 5.0 mA 10 16 IF = 50 mA IF = 40 mA 14 IF = 30 mA 12 IF = 20 mA 10 8 IF = 10 mA 6 IF = 5 mA 4 IF = 2 mA 2 IF = 0.5 mA IF = 1.0 mA 0 0 1 2 3 4 5 6 7 8 9 0 0.0 10 0.2 VCE - COLLECTOR-EMITTER VOLTAGE (V) 0.6 0.8 1.0 VCE - COLLECTOR-EMITTER VOLTAGE (V) Figure 8. Collector Current vs. Collector-Emitter Voltage Figure 9. Collector Current vs. Collector-Emitter Voltage 1000 10 SWITCHING TIME (s) ICEO - COLLECTOR DARK CURRENT (A) 0.4 IF = 1.0 mA 1 VCE = 48 V VCE = 24 V 0.1 VCE = 10 V 0.01 TA = 25C IF = 16 mA VCC = 5 V tOFF 100 tS 10 1 VCE = 5 V tON 0.1 0.001 0 20 40 60 80 100 1 10 TA - AMBIENT TEMPERATURE (C) 100 RL - LOAD RESISTANCE (K) Figure 10. Collector Dark Current vs. Temperature Figure 11. Switching Time vs. Load Resistance 0.30 IF = 5 mA IC = 1 mA VCE(SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Figure 12. Collector-Emitter Saturation Voltage vs. Temperature (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 www.fairchildsemi.com 6 HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Typical Performance Characteristics (Continued) HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Reflow Profile Max. Ramp-up Rate = 3C/S Max. Ramp-down Rate = 6C/S 260 T P 245 240 220 TL Temperature (C) 200 tP Tsmax tL 180 160 Tsmin 140 ts 120 100 80 60 40 20 0 120 240 360 Time 25C to Peak Figure 13. Reflow Profile Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150C Temperature Maximum (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second maximum Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds Peak Body Package Temperature 245C +0C / -5C Time (tP) within 5C of 245C 30 seconds 6C/second maximum Ramp-down Rate (TP to TL) Time 25C to Peak Temperature (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 8 minutes maximum www.fairchildsemi.com 7 Part Number Package Packing Method HMHA2801 Half Pitch Mini-Flat 4-Pin Tube (100 units) HMHA2801R2 Half Pitch Mini-Flat 4-Pin Tape and Reel (2500 Units) HMHA2801V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units) HMHA2801R2V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units) Note: 2. The product orderable part number system listed in this table also applies to the HMHA281, HMHA2801A, HMHA2801B, and HMHA2801C products. Marking Information 1 3 281 2 V X YY M1 6 4 5 Figure 14. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., "5" 5 Digit Work Week, Ranging from "01" to "53" 6 Assembly Package Code (c)2011 Fairchild Semiconductor Corporation HMHA281, HMHA2801 Series Rev. 5.2 www.fairchildsemi.com 8 HMHA281, HMHA2801 Series -- 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Ordering Information 0.3-0.51 2 1 1.52 0.61 3 4.83 7.87 4.40 (Typ) 6.30-7.29 PIN ONE 4 0.55-0.75 2.31-2.69 1.27 2.39 (Max) 1.95-2.11 0-0.20 LAND PATTERN RECOMMENDATION R0.15 (Typ) R0.15 (Typ) 1.27+/- .127 0.30-0.89 1.19 (Typ) NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION : MKT-MFP04AREV4. 0.18-0.25 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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