2N2522-2N2617 Numerical Index ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Type | 65/2 | REPLACE | PAGE | se | Po {3} Ty | Vee | Vee |= tre @ Ic Voxsar) @ Ic Bl t |e e/a] MENT | NUMBER = 3 ei) he l8| eis =\o @ 25C | S| C | Wolts) | (volts) |S | (min) (max) =| (volts) = 3 5\s 2N2522 S|{N AFA 0.4W | A | 200 60 60 | 0 50 1.0M 0.5 10M 76 |E 50M |B 2N2523 SIN AFA 0.4W 7] A } 200 60 4510 40 | 120 Lo* 0.5 LOM 60 | E 45M |T 2N2524 S|N AFA 0.4W 7] A | 200 60 45 10 | 100 | 300 1o* 0.5 10M 150 [E 45M |{T 2N2525 S|N HPA 25W 1 C | 200 100 80 +o 10 0,354 0.8 1L.0A 154M | T 2N2526 G]P 7-87 PHS 85w | c ; 110 80 80] 0 20 50 3.0A 0.8 10A 30K | T 2N2527 GIP 7~87 PHS 85W |} Cc | 110 120 12010 20 50 3.0A 0.8 10A 30K | T 2N2528 GI} P 7-87 PHS 85W }c | 110 160 160 {0 20 50 3.0A 0.8 10A 30K |T 2N2529 S|N APA 150M] A | 175 AS 40} 0 LO 20 1.0M 2.0 10M 12 |E 6,0M |B 2N2530 SN AFA 150M | A | 175 45 40 ]0 12 35 1.0M 2.0 10M 18 |E 10M 1B 2N2531 S|N AFA 150M } A 4175 45 4010 20 80 L.OM 2.0 10M 36 |E 12M |B 2N2532 S|N AFA 150M [A | 175 45 4010 45 | 185 1.0M 2.0 LOM 76 }E 16M |B 2N2533 SIN AFA 150M | A | 175 45 40 10 20 55 10M 1.5 10M 19 |E 10M |B 2N2534 S| N AFA 150M | A | 175 45 40]0 45 | 150 10M 1.5 LOM 39 |E 20M /B 2N2535 G]P AFA 1ow {Cc 7 100 60 30 | 0 40 | 120 0.4A 0.5 L.OA 15 | E 8.0K | E 2N2536 G[P AFA LOW | c | 100 80 40 |0 40 | 120 0.4A 0.5 L.OA 15 | E 8.0K 1 E 2N2537 S|N 8-151] HSS 0.8W | A | 200 60 30,0 50 | 150 150M | 0.45 150M 250M | T 2N2538 S|] N 8-151! HSS 0.8W | A | 200 60 30 1 0 { LOO | 300 150M 10,45 150M 250M | T 2N2539 S|}N 8-151] HSS O.5W | A | 200 60 30 }0 50 | 150 150M [0.45 150M 250M | T 2N2540 SIN 8-151| HSS O.5W | A [| 200 60 30 | Oo | 100 | 300 150M [0.45 150M 250M | T 2N2541 G} P MSS 215M {A | 100 30 14 | 0 60 | 250 50M | 0.25 50M 10M |B 2N2542 thru Thyristors, see Table on Page 1-154 2N2550 2N2551 8] P AFA 0.4W |] A | 200 150 150 /0 15 45 0.14 1.2 O.1A 2N2552 GIP LPA 20W 4; Cc { 100 40 40 /V 20 60 1.0A | 0.25 1.04 18 /E 225K | T 2N2553 G| P LPA 20W | Cc } LOO 60 60 | Vv 20 60 1.0A | 0.25 1.0A 18 | E 225K | T 2N2554 G\P LPA 20w | | 100 80 80 |v 20 60 1.04 10.25 L.0A 18} 225K \T 2N2555 G] P LPA 20W | c | 100 160 100 iV 20 60 1.0A | 0.25 1.0A 18 /E 225K | T 2N2556 GIP LPA 20W | c | 100 40 40}V 20 60 L.0A | 0,25 1.04 18 | E 225K | T 2N2557 G}P LPA 20W fc } 106 60 60] V 20 60 1.0A | 0.25 L.OA 18] E 225K | T 2N2558 G\P LPA 20w | c | Lao 80 gd |v 20 60 1.04 [0.25 L.OA 8 E 225K 1 T 2N2559 G| P LPA 20W | c | 100 100 100 | V 20 60 1.0A | 0,25 1.0A 18}E 225K | T 2N2560 G\ P LPA 20wW | c | 100 40 40] Vv 20 60 3.0A 10.75 3.0A 25 )/E 250K ]T 2N2561 GG] P LPA 20W | c | 100 60 60 {Vv 20 60 3.0A } 0.75 3.0A 25 /E 250K | T 2N2562 G\P LPA 20w | c | 100 80 s0lV 20 60 3.04 10.75 3.04 25,5 250K | T 2N2563 G| P LPA 20W | Cc ft 100 100 100 | V 20 60 3.0A | 0.75 3.0A 25 ]E 250K | T 2N2564 G| P LPA 20W | c | 100 40 40 |v 20 60 3.0A | 0,75 3.0A 25/15 250K | T 2N2565 Gi P LPA 20W | Cc | 100 60 60 | Vv 20 60 3,0A {0.75 3.0A 25 ,E 250K | T 2N2566 G]P LPA 20W | c |] 100 80 80] Vv 20 60 3.0A | 0.75 3.0A 25 ,E 250K | T 2N2567 GI] P LPA 20W | c | 100 100 100 | V 20 60 3.0A |}0.75 3.0A 25 ],E 250K ] T 2N2568 GEN HPA 1.0W | Cc | 100 32 32 | s 10 60 40M 10.75 LOOM 600M | T 2N2569 S| N CHP 300M | A | 200 20 5.0] 0 50 100% 100M | T 2N2570 S| N CHP 300M j A | 200 20 5.0] 0 50 100* 100M | T 2N2571 S|N CHP 300M | A | 200 20 15] 0 50 LOOM LOOM {| T 2N2572 S| N CHP 300M | A } 200 20 15 }o 50 100M 2N2573 thru Thyristors, see Table on Page 1-154 2N2579 2N2580 S| N PMS 150W | c | 150 400 400 | 0 10 40 5.0A 0.7 5.0A 30K | E 2N2581 S|,N PMS 150W | c | 150 400 A00 10 25 65 5.0A 1.0 10A 30K [E 2N2582 S|N PMS 150W | c | 150 500 500 | 0 10 40 5.0A 0.7 5.04 30K | E 2N2583 S]N PMS 150W | C | 150 500 500 | 0 25 65 5.0A 1.0 LOA 30K J E 2N2584 S|N PMS 150W | c | 150 600 600 | 0 10 40 5.0A 0.7 5.0A 30K} E 2N2585 S|N PMS 150W | c | 150 600 600 | 0 25 65 5.0A 1.0 LOA 30K [E 2N2586 S|N AFA 300M | A | 175 60 45 | O | 120 | 360 1o* 0.5 10M 150 |E 1.5K |T 2N2587 GG] P REA 150M; A | 100 30 3075 15 | 100 8.0M 0.5 50M ]0.95 | B 320M | T 2N2588 Gt P RFA 150M | A j 100 40 20/0 50 | 150 1.5M 50 JE 75M | T 2N2589 S|N PMS 150W | Cc | 200 150 150] 0 17 51 7.04 71.05 7.0A 5.0]E [0.25M|T 2N2590 S|] P VID O.4W ] A | 200 100 60] 0 10 o.1M 0.4 10M 401E 50M | T 2N2591 S|] P VID 0.4W | A | 200 100 60] 0 20 0.1M 0.4 LOM 7O|E 70M | T 2N2592 S| P VID 0.4W | A | 200 100 60 | 0 40 0.1M 0.4 10M 1IS | E 90M | T 2N2593 S\P vip 0.4W ,A | 200 100 60 190 60 o.1M 9.4 10M 160) E LLOM | T 2N2594 S|N AFA 5.0W |] Cc [200 80 90 ]R 50 | 150 100M 1.0 200M ISJE 40M | T 2N2595 S;,P VID 0.4W | A | 200 80 60] 0 15 60 5.0M 0.5 LOM 20]E 30M}, T 2N2596 S| P VID 0.4W | A | 200 80 60] 0 30 | 120 5.0M 0.5 10M 40 ,E 40m | T 2N2597 Sy P VID Q.4w | A | 200 80 6a loa 60 {| 240 5.0M Q.5 10M 80 | E 60M | T 2N2598 S|P VID 0.4W } A | 200 125 80/0 15 60 5.0M 0.5 10M 20/E 30M | T 2N2599 S| P VID 0.4W {A | 200 125 80] 0 30] 120 5.0M 0.5 10M 40/E 40M | T 2N2599A | S| P VID O.4w [A 4200 125 100 | 0 30 | 120 5.0M 0.5 LOM 40 ]/E 40M | T 2N2600 S|P VID 0.4W | A | 200 125 80 10 60 | 240 5.0M 0.5 LOM 80, E 60M | T 2N2600A |S] P VID O.4W | A | 200 125 100 | 0 60 | 240 5.0M 0.5 10M 80] E 60M |] T 2N2601 sj;P VID 0.4W {A | 200 60 60 | 0 12 : 0.5 10M 18 /E 20M {TF 2n2602 | s[P vip] o.4w]a [200] 60[ 6ofo] 25 0.5 tom! 36/E] 4om/T 2N2603 S| P VID O.4W | A | 200 60 60 } 0 50 0.5 LOM JO)E 60M] T 2N2604 S| P VID 0.4W | A | 200 60 45.] 0 40 0.5 10M 60 /E 30M | T 2N2605 S| P | 2N3798 8-278] VID 0.4W | A | 200 60 45 | 0 4100 0.5 10M 150 | E 30M | T pus Oba S| P VID 0.4w | A | 200 60 4510 50 } 200 1.0* |0.25 LOM 200 |E 45M | T N thru Field Effect Transistors, see Table on Page 1-166 2N2609 2N2610 S| N AFA] 0.15W ] A {150 45 40]0 1.0 5.0M 4.5 ]/E 2N2611 S\N LPA 2.0W [A | 175 120 100 |0 17.0 36 Q.2A4 1.7 0.24 l2)E 4.0M | T 2N2612 G| P| 2N1559 7-67 LPA 75w | c | 100 65 65 /V 85 | 250 LOA 1.0 LOA 2N2613 G| P | 2N1193 6-30 AFA 120M | A | 100 30 25 ,R 120 /E 4.0M]B 2N2614 G] Pj 2N1193 6-30 AFA 120M; A | 100 40 35 |R 100 | E 4.0M|/B 2N2615 S| N SPP 300M } A | 200 30 15 | 0 20 | 200 3.0M 0.5 3.0M 500M | T 2N2616 S1N | 2N1559 7-67 SPP 300M | A | 200 30 15 | 0 20 | 200 3.0M 0.4 LOM 600M | T 2N2617 S| P AFC | 0.25W | A [150 25 15 80 20M 25 4E 1-130KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors 2N2537 thru 2N2540 (siticon) , vey = NPN silicon annular Star transistors for high-speed switching. CASE 22 CASE 31 (TO-18) (TO-5) 2N2539 2N2537 2N2540 2N2538 Collector connected to case MAXIMUM RATINGS 2N2537 | 2N2539 Rating Symbol 2N2538 | 2N2540 Unit (TO-5) (TO-18) Collector-Base Voltage Vos 60 60 Vdc Collector-Emitter Voltage VcEO 30 30 Vdc Collector-Emitter Voltage VCER 40 40 Vde Emitter-Base Voltage VEB 5 5 Vde Total Device Dissipation Pp Watts 25C Case Temperature 3 1.8 Derate above 25C 17.2 10.3 mw/C Total Device Dissipation Pp Watts 25C Ambient Temperature 0.8 0.5 Derate above 25C 4.57 2.86 mW/C Junction Temperature Ty -65 to +200 c Storage Temperature Tatg ~65 to +200 c TOTAL CONTROL CHARGE TEST CIRCUIT ACTIVE REGION TIME CONSTANT TEST CIRCUIT +8.3V 415.2 Vde +8.3V 415.2 Vde = ~ GROUND PLANES 0 OSCILLO FL woo $ Faprouowere SL gm, PULSE AT A Zin = 10 MQ INPUT | 1k O SIGNAL Vour | TO OSCILLOSCOPE RISE TIME <= 5 ns 100A INPUT TRANSITION Zi, = 10 MQ TIME = 2 ns 50 INPUT * 500 IMPEDANCE = 500 d OUTPUT 100 { Hq Relay = = 10% 4 = t= TafpR = 10 to 90% Rise Time t= = 10 to 90% Fall ADJUST INPUT FOR 0 TO 48.39 fA samy max Re geet ao vem PULSE AT POINT A 90% ge \Fo-05Er ) TRANSITION TIME << 2 ns Tae Te Te : infi + Bo = a LO ns max = # ( F Output Waveform Tus la Bo = bre at Edge of Saturation Bc = Ic in Saturation / tz (Base OFF Current) Br = tc in Saturation / !11 (Base ON Current) 8-151 Switching and General Purpose Transistors 2N2537 thru 2N2540 (continued) ELECTRICAL CHARACTERISTICS (At 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector Cutoff Current (Voz = 40 Vdc, Ip = 0) Vez = 40 Vde, Ip = 0, Ta = 150C) logo 0. 250 200 uAdc Emitter Cutoff Current (Vp = 3 Vde, I = 0) InBoO Collector Cutoff Current (Vpp = 0.2 Vde, Vog = 20 Vdc) IcEXx 0. 250 Base Cutoff Current (Var = 0.2 Vde, Vop = 20 Vde) (Vpr > 0.2 Vde, Voge = 20 Vde, Ta = 150C) Iai 0. 250 200 Collector-Base Breakdown Voltage (Ig = 10 pAde, Ip = 0) BVcBo 60 Vde Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, pulsed, Ip = 0) BVcEO 30 Vdc Colector-Emitter Breakdown Voltage (Ic = 100 mAdc, pulsed, Rp S 10 2) BVCER 40 Vde Emitter-Base Breakdown Voltage (Ip = 10 pAdc, Ig = 0) BVe BO Vde Collector Saturation Voltage * (Ic = 150 mAdc, Ip = 15 mAdc) (Ic = 500 mAdc, Ip = 50 mAdc) VcE(sat) 2 > Pa Vde Base-Emitter Saturation Voltage (I = 150 mAdc, Ip = 15 mAdc) * (Ic = 500 mAdc, Ip = 50 mAdc) VBE(sat) pe aw Vde DC Forward Current Transfer Ratio (Ig = 1 mAdc, Vcr = 10 Vdc) 2N2537, 2N2539 2N2538, 2N2540 (Ic = 10 mAdc, Vcg = 10 Vdc) 2N2537, 2N2539 2N2538, 2N2540 (Ic = 150 mAdc, Vox = 10 Vde)* 2N2537, 2N2539 2N2538, 2N2540 (Ic = 500 mAdc, Vcr = 10 Vde)* 2N2537, 2N2539 2N2538, 2N2540 hrE Output Capacitance (Vop = 10 Vde, Ip = 0, f = 100 kHz) Cob pF Input Capacitance (Veep = 0.5 Vdc, Ig = 0, f = 100 kHz) Cip 25 pF Small Signal Forward Current Transfer Ratio (VoR = 20 Vdc, Ic = 20 mAdec, f = 100 MHz) hee Pulse Test: Pulse width = 300 ys, duty cycle = 2% SWITCHING CHARACTERISTICS Characteristic Symbol Max. Unit Total Control Charge Qy 750 pc Storage Time Ts (Ic = Ipy = pg = 20 mAdc, Veo=5 v) 20 ns Active Region Time Constant TA 2.0 ns Turn-on Time t (pt = Ipg = 15 mAdc, Ic = 150 mAde, Vcc = 7 Vde, Ry, = 40 2) on 40 ns Turn-off Time tore (lpi = lpg = 15 mAdc, Ig = 150 mAde, Voc = 7 Vde, Ry, = 402) 40 ns 8-152