ZENER DIODES RD4.7FM to RD51FM ZENER DIODES 1 W 2 PIN POWER MINI MOLD DESCRIPTION Type RD4.7FM to RD51FM Series are 2 PIN Power Mini Mold Package zener diodes possessing allowable power dissipation of 1 W. QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices {Document number IE]-1209) pubtished by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. FEATURES @ Sharp Breakdown characteristics @ Vz; Applied E24 standard APPLICATIONS Circuits for, Constant Voltage, Constant Current, Waveform clipper, Surge absorber, ete. MAXIMUM RATINGS (Ta = 25 C) Power Dissipation P TW Forward Current tr 200 mA Junction Temperature Tj 150 C Storage Temperature Tstg ~55 to +150 C PACKAGE DIMENSIONS (Unit: mm) 1340.2 1.554 0.1 11420108401 1420.1 2540.1 / Cathode indication Document No. DC-2134 Date Published September 1993 M Printed in Japan 164 NEC Corporation 1993NEC RD4.7FM to RO51FM ELECTRICAL CHARACTERISTICS (Ta = 25 + 2 C) Dynamic Type clase Zener Aatese Impedance Reverse et Number MIN. | MAX. | izima) | MAX. | IzimA) | MAX. | Vatv) RD4.7FM B 44 43 5 100 5 20 1.0 ADS. 1FM B 43 5. 5 300 5 2 | 10 | RD5.6FM B 53 6.0 5 70 5 2.15 RD6.2FM B 58 6.6 5 40 5 20 3.0 | RD6.8EM B 64 72 5 25 5 20 35 RD7.5FM B 7.0 79 5 25 5 20 4.0 RO8.2FM B 77 87 5 25 5 20 | 5.0 RD9.1FM B 85 9.6 5 25 5 2 | (6.0 RD10FM B 9.4 10.6 5 20 5 10 7.0 RD1IFM B 10.4 8 5 20 5 10 8.0 ADI2FM B 114 12.6 5 26 5 10 9.0 RD13EM B 12.4 1441 5 30 5 10 10 RD1SFM B 13.8 15.6 6 30 5 10 1 RO1GEM B 18.3 17.1 5 40 5 10 | 12 RD18EM B 16.8 19.1 5 45 5 10 13 RD20FM B 188 | 212 5 55 5 10 5 RD22FM B 20.8 | 233 2 55 2 10 7 RD24EM B 228 | 256 2 70 2 10 19 RD27FM B 25.1 28.9 2 80 2 40 21 RO30FM B 28.0 | 32.0 2 80 2 70 23 RD33FM B 31.0 | 35.0 2 a0 2 10 25 RO36FM B 34.0 | 38.0 2 90 2 10 27 RD39FM B 370 | ato 2 130 2 70 30 RD43FM B 40.0 | 45.0 2 150 2 5 33 RD47FM B 44.0 | 49.0 2 170 2 5 36 RDS1FM B 48.0 | 54.0 2 "220 2 5 39 * Tested with pulse (40 ms) ** 22 is measured at iz given a very small A.C. signal i165NEC RD4.7FM to RD51FM TYPICAL CHARACTERISTICS [Ta = 25 C} Fig. 1 P-Te RATING 30x 8x 0.7 Ps 20 x 30 1.6 P.C.B (Glass P - Pawer Dissipation - W 0 700 200 Ta - Ambient Temperature - C Fig. 2 iz - Vz CHARACTERISTICS {a to f} TLL lebarel ! RDOIZFM: } + RDIFMA. | 43 | ; F 100 m -ADIOFM ADT id laos 19m - * i Lt a tm t i S100 4 | A 5 o 3 g 3 8 2 104 | N N 4 4 a Zou, / | 100. [7 y L/L) 10 "AALS 1a Ge : 0 12 3 45 6 7 8 O 7 8 9 10 11:12 13 14 15 Vr - Zener Voltage ~ V Ve- Zener Valtage ~ V (a) fb) '66NEC A 3 - tz - Zener Current - 3 104 7 iz ~ Zener Current - A n 0 11:12 13 14 15 16 17 18 19 3 100 p 2 zr r 8 3 Vi ~ Zener Valtage -- V fc) | RD36FM }- RDS3EM RDSIFM aoborw y YALA ve 0 25 30 3& 2 - Zener Voltage - V fe) 40 12- Zener Current - A RD4.7FM to RDS1FM i | RD27FM | | RO24EM 100 m |-BD22FM \ ROZOFM\ , } 10m ly - Zener Current - A WLLL 0 18 20 22 24 26 28 V2 ~ Zener Voltage - V id} LRD43FM AL: RD47FM 10cm p- RDS1FM aL O 30 50 70 90 Vi ~ Zener Voltage ~V (f) 167NEC RD4.7FM to RD51FM Fig. 3 yz~- Vz CHARACTERISTICS 0.14 O12 0.10 0.08 Q v = S * 0.06 E 1 & 0.04 5 2 g 5B 0.02 = g g eg 9 2 2 3 @ Ss 5 0.02 s 3 & & 5 0.04 2 a Nn > 0.06 > x ~ = -0.08 > @=5mA,2mA O71 4 8 12 16 20 24 28 32 36 40 44 48 52 Vz-~ Zener Voltage ~ V Fig. 4 Zz- Iz CHARACTERISTICS 1 000 1 000 Tea = 25C TYP. 100 a oS 1 f 8 8 Cc c xo a z 5 a 10 5 a & oe x Ni t 4 ND N 1 0.4 1 10 100 1 10 100 Jz - Zener Current - mA iz - Zener Current - mA {a} {b)NEC Zin~ Transient Thermal impedance "C/V Pasm Surge Reverse Power - W RD4.7FM to RD51FM Fig. 5 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1000 0.4 im 10m 100 m q 10 100 t~ Time - sec Fig.6 SURGE REVERSE POWER RATINGS 10 000 Ta = 25 C Repetitive 1900 100 10 4 ty Oy 100 pe im 10 106 m t~ Pulse Width - sec i169