TOSHIBA TDISCRETE/OPTO} bb? DE sosz2s0 g0092849 4 i __.9097250 TOSHIBA (DISCRETE/OPTO) 67 09289. 0 T 03-07 LC. . 1 N 41 49 = =. Silicon Epitaxial planar Type Diode TENTATIVE | COMMUNICATION AND INDUSTRIAL APPLICATIONS. onet ae ae | HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. 3 FEATURES: a . Low Forward Voltage : Vp=1.2V (Max.) + Small Total Capacitance : Cyp=2pF (Max.) { a i Fast Reverse Recovery Time : trr=4ne (Max.) 4 Hermetically Sealded Miniature Glass Package. CATHODE MARK MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL | RATING | UNIT gos z Maximum (Peak) Reverse Voltage VRM 100 Vv 3 Reverse Voltage VR 75 y Maximum (Peak) Forward Current IRM 450 mA TEDEO Doles : Average Forward Current Io 150 mA EAI fo-40 i Surge Current (lus) IFsm 2 A TOSHIBA 1-RAlA Power Dissipation P 500 mW | Weight : 0.14g Junction Temperature Tj 200 c Storage Temperature Range Tstg -65~200!] c ELECTRICAL CHARACTERISTICS (Ta=25c) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP. | MAX. | UNIT Forward Voltage Vr(1)_| Tpel0mA ~_ {0.75 | 2.0 | V VF(2)_| Tr=100mA - |o.95 | 1.2] Vv Tr(1)_ | VR=20V ~ | - | 25] na Reverse Current IR(2) | VR=20V, Ta=150C - - 50 | #A TR(3) | VR=75V - ~ 3 | #A Total Capacitance / cT Vp20, f=1MHz - - 2.0 | pF Reverse Recovery Time trr Vr=6V, Ip-10mA - 2.0 | 4.0 | ns Ry=1000 TOSHIBA CORPORATION 1 . 124