SLE D MM 4136671 0003907 US5 MBSEKG SEMIKRON INC - SEMIKRON Vaso IraMs (maximum values for continuous operation) Fast Recovery Rectifier ; Diodes ~~ oo VRRM 10A : 10A 10A < : T-03-15 lrav (sin. 180; Tret = 120 C, L= 10 mm;f < 1 kHz) SK 1 GF vo 1.3A 1,3A | 1,3A Sei cL 100 i SK1GFO1 SK1GHO1 | - 200 SK 1 GF 02 | SK 1 GH 02 | SK 1 GL 02 400, SK 1 GF 04 SK 1 GH 04 SK 1 GL 04 600C SK 1 GF 06 | SK 1 GH 06 SK 1 GL 06 800 | - SK1GHO8 | SK1GL08 1000 - SK 1 GH 10* SK 1 GL 10 1 . ki Symbol | Conditions | Ski | SK1 SK1 [Units! | GF | GH GL IFAV' Tref = 100 C; L= 10 mm; : | _sin/rec. 180 4,49 1,42) 1,49) A Tamb = 45 C; sin/rec. 180; | | Rinja = 75 C/W | 1,05 | 1,057 | 1,057 | A, t Features I Ty= 25C; t=10ms ' 50 ' A : , FSM Ty = 175C: t=10ms | 40 | A * Axial lead diodes, taped t=8,3ms 45 i A Glass passivated silicon chip i*t Ty= 25C;8,3... 10 ms 12.5 As Void-free moulded plastic acc. Ty = 175 C; 8,3... 10 ms ,; 8 As to Underwriters Laboratory (UL) f ; flammability classification !Qrr | Ty= 150 C: lpm =5 A; 12 | 2 3 uC | 94 V-0 ~ dir/dt = 100 A/us; Polarity: Band denotes cathode IRM Vr = 100 V; max. 10 | 14 17 A terminal tr Ty = 25 C; Ir = 0,5 A; i Peak inverse voltage up to IRM = 1 A; irr = 0,25 A; max. 80 150 300 ns 1000 V tr Ty = 25 C; lem = 2 A; ! High surge current of 50A 'dir/dt = 100 A/ us; typ. 100 500 500 | ns Available with formed leads on lr Ty= 25C; Va = Varm; max. 5 uA request Ty = 150 C; Va = Varn: typ. 400 WA | V Ty= 25C leet A 10 V Typical Applications F w= ret A max. , _ Switched mode power supplies ViTo) Ty = 175C 0,95 Vi e TVsets tT Ty = 175 C 120 mQ e Inverters i Rie L=10mm 30 CW asonlc generators 4 e Rina |p.c.b. 50 x 50 mm 75 C mounting Ty -40...4 175 C Tstg 5...4 175 C Tsolder jmax. 10s, L=9mm 280 ie) 2 a 5 - 9,81 mis )t< 50 kHz w approx. 0,5 g *) f< 30 kHz Case pageB9-18 E33 3) < 15 kHz * Available in limited quantities by SEMIKRON B9-9SLE D) MM 823667) 0003908 341 MESEKG SEMIKRON INC aLSK 1 GF Vat Vram - f 50 kHz _ sin/rec 180 {0 = 05) = 75C/W 06 L Tray 9 O TambTret 50 100 150 c 200 Fig. 12 a Rated forward current vs. temperature 2 TER EPerer Vat Van | f $16 kHz sin/tac 180 {D = 05] SK_1 GL A Rina 7 75C/W | Ltt L L 05 leay t 4 out i TambTret 50 100 150 200 be Fig. 12 c Rated forward current vs. temperature 1000 SK 1 GF w/SK 1 GH SK 1 GL 100 q o Tt 50 100 150 =6%G)~200 Fig. 18 Reverse current vs. junction temperature T-03-15 - The A tL 1 Yat Vee ' f 30 kHz gin Zrac 180 iD = 05} 1b Rig = 75tC7WY 05 Liem bt ' Ney TRS leay XS a Trot - of LLLEELirt I 0 TyrpTret 50 100 560 6200 Fig. 12 b Rated forward current vs. temperature P.C.B. for Rina = 75 C/W 50 - - 25 >| _.| t 50- Cu _. 35pm | ~h Glass fiber_ _ reinforced =" epoxy resin 60 acd 50 30 EL L Va la VA SES ' Pinte Teat Tile: ree 5 L 10 15 20 mm 26 Fig. 14 Thermal resistance vs. lead length 10 B9-10 by SEMIKRONS1E D WM 4136671 0003909 226 MESEKG SEMIKRON INC tem 0.3 : tot it 102 403 ys 104 Fig. 2 .Forward energy dissipation, sinusoidal 16 SK 1 GF vps 150C Va = 400 Ipg= O5mA po Qs %5 -dig/dt 50 100 150 A/ps 200 Fig. 5a Recovered charge 4 Lt I SK 1 GL pe roid Tyj= 150C Va = 400V lpg 0.4mA Orr 0 1 OQ -dig/dt 50 100 150 A/ys 200 Fig. 5c Recovered charge SEMIKRON T~03~-15 t e muf yy cay bt of sof 100 ms | iol tp 102 163 ps 104 Fig. 4 Forward energy dissipation, rectangular uo SK 1 GH Tyy= 160C Va = 400V Ipo= 0.5mA Qe i o 0 -dic/dt 60 100 150 A/ys 200 Fig. 5 b Recovered charge 20 A SK 1 GF 5 Tie 150C tRm 0 QO -ag/dt 59 190 156 A/ps 200 Fig. 6 a Peak reverse recovery current by SEMIKRON B9O-11SLE D MM &)3bb71 SEMIKRON INC OOO39L0 THT MMSEKG 30 A 20 lam 0 QO -dip/dt 50 400 150 A/us 200 Fig. 6b Peak reverse recovery current 4 A 3 Ip 0 6 Vp 05 1 16 v 2 Fig. 8 Forward characteristics 7 0.7 1 ED 2 3 4 10 Fig. 10 Intermittent duty overload current T-03-15 30 20 Oo aievdt 50 10 ~-150.~=CAys 200 Fig. 6c Peak reverse recovery current 100 min Q1 O01 lptovy) 3 4 8 104 2 93 48 A 102 Fig. 11 Rated surge overload current 20 30 40 50 % 100 B9~12 - by SEMIKRON