ZXMP3F37N8TA - DIODES Incorporated

ZXMP3F37N8

30V SO8 P-channel enhancement mode MOSFET

Summary

V(BR)DSS (V) RDS(on) (Ω) ID(A)

0.025 @ VGS=-10V -10.7 -30

0.041 @ VGS=-4.5V

Description

This new generation Trench MOSFET from Zetex has been de signed to minimize the on-state

resistance (R DS(on)) and yet maintain su perior switching performance making it ideal for high

efficiency power mana gement applications.

Features

• Low on-resistance

• Fast switching speed

• Low gate drive

• SO8 package

Applications

• DC-DC Converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device Reel size

(inches) Tape width

(mm) Quantity

per reel

ZXMP3F37N8TA 7 12 500

Device marking

ZXMP 3F37

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Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-Source voltage VDSS -30 V

Gate-Source voltage VGS ±20 V

Continuous Drain current @ VGS= -10V; TA=25°C (b)

@ VGS= -10V; TA=70°C (b)

@ VGS= -10V; TA=25°C (a)

@ VGS= -10V; TL=25°C (d)

ID -8.5

-6.8

-6.4

-10.7

Pulsed Drain current (c) IDM -39.5 A

Continuous Source current (Body diode) (b) IS -4.4 A

Pulsed Source current (Body diode) (c) ISM -39.5 A

Power dissipation at TA =25°C (a)

Linear derating factor PD 1.56

12.5 W

mW/°C

Power dissipation at TA =25°C (b)

Linear derating factor PD 2.8

22.2 W

mW/°C

Power dissipation at TL =25°C (d)

Linear derating factor PD 4.4

35.4 W

mW/°C

Operating and storage temperature range Tj, Tstg -55 to 150 °C

Thermal resistance

Parameter Symbol Value Unit

Junction to ambient (a) RθJA 80 °C/W

Junction to ambient (b) RθJA 45 °C/W

Junction to lead (d) RθJL 28.26 °C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions.

(b) Mounted on FR4 PCB measured at t ≤ 10 sec.

temperature.

(d) Thermal resistance from junction to solder-point (at the end of the drain lead).

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Thermal characteristics

100m 1 10

10m

100m

100

Single Pulse

Tamb=25°C

RDS(on)

Limited

100µs

1ms

10ms

100ms

Safe O p erating Area

-ID Drain Current (A)

-VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

25mm x 25 mm

1oz FR4

Derating Curve

Temperatu re (°C)

Ma x Power Dissip a tion ( W )

100µ 1m 10m 100m 1 10 100 1k

80 Tamb=25°C

Transient Therm al Im ped ance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Ther m a l Re sist an ce (°C/W)

Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k

100

Single Pulse

Tamb=25°C

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

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Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

Drain-Source breakdown

voltage V(BR)DSS -30 V

ID = -250μA, VGS=0V

Zero Gate voltage Drain

current IDSS -1.0 µA

VDS=-30V, VGS=0V

Gate-Body leakage IGSS 100 nA

VGS=±20V, VDS=0V

Gate-Source threshold

voltage VGS(th) -1.3 -2.5 V

ID= -250μA, VDS=VGS

Static Drain-Source

on-state resistance (*) RDS(on) 0.025

0.041

Ω VGS= -10V, ID= -7.1A

VGS= -4.5V, ID= -5.5A

Forward

Transconductance (*) (†) gfs 18.6

S VDS= -15V, ID= -7.1A

Dynamic (†)

Input capacitance Ciss 1678 pF

Output capacitance Coss 303 pF

Reverse transfer

capacitance Crss 178 pF

VDS= -15V, VGS=0V

f=1MHz

Switching (‡) (†)

Turn-on-delay time td(on) 3.5 ns

Rise time tr 4.9 ns

Turn-off delay time td(off) 44 ns

Fall time tf 28 ns

VDD= -15V, VGS= -10V

ID= -1A

RG ≅ 6.0Ω,

Gate charge

Total Gate charge Qg 31.6 nC

Gate-Source charge Qgs 4.3 nC

Gate-Drain charge Qgd 6.2 nC

VDS= -15V, VGS= -10V

ID= -7.1A

Source–Drain diode

Diode forward voltage (*) VSD -0.80 -1.2 V

IS= -1.7A,VGS=0V

Reverse recovery time (‡) trr 16.2 ns

Reverse recovery charge(‡) Qrr 10 nC

IS= -2.2A,di/dt=100A/μs

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.

(‡)For design aid only, not subject to production testing

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Typical characteristics

0.1 1 10

0.1

0.1 1 10

0.01

0.1

-50 0 50 100 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1 1 10

0.01

0.1

0.2 0.4 0.6 0.8 1.0

1E-3

0.01

0.1

2.5V

10V 3.5V

4.5V

O u tp u t C h aracteristics

T = 25°C

VGS

-ID Drai n Current (A)

-VDS Drain-Source Voltage (V)

10V

2.5V

3.5V 3V

Ou tpu t Ch aracteristics

T = 150°C

VGS

-ID Drai n Current (A)

-VDS Drain-Source Voltage (V)

Typical Transfer Ch aracteristics

VDS = 10V

T = 25°C

T = 150°C

-ID Drain Cu rrent (A )

-VGS Gate-Source Voltage (V) Normalised Curves v Tem perature

RDS(on)

VGS = 10V

ID = 7.1A

VGS(th)

VGS = VDS

ID = 250uA

Normalised RDS(on) and VGS(th)

Tj Jun ction T emperature (°C)

2.5V

10V

3.5V

On -Resistance v Drain Current

T = 25°C VGS

RDS(on) Drain-Source On-Resistance (Ω)

-ID Drain Curren t (A)

Vgs = 0V

T = 150°C

T = 25°C

Source-Drain Diode Fo rward Voltage

-VSD Source-Drain Voltage (V)

-ISD Reverse Drain Current (A)

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Typical characteristics

110

500

1000

1500

2000

2500

CRSS

COSS

CISS

VGS = 0V

f = 1MH z

C Capacitance (pF)

-VDS - Drain - Source Volta ge (V) 0 5 10 15 20 25 30 35

10 ID = 7.1A

VDS = 15V

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Sou rce Voltage Q - Charge (n C)

-VGS Gate-Source Voltage (V)

Test circuits

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Package outline SO8

SO8 Package Information

Inches Millimeters Inches Millimeters DIM

Min. Max. Min. Max.

DIM

Min. Max. Min. Max.

A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC

A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51

D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25

H 0.228 0.244 5.80 6.20 U 0° 8° 0° 8°

E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50

L 0.016 0.050 0.40 1.27 - - - - -

Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters

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Definitions

Product change

Diodes Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or

service. Customers are solely responsible for obtaining the latest relevant information before placing orders.

Applications disclaimer

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the

user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex

with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or

otherwise. Diodes Zetex Semiconductors does not assume any legal responsibility or will not be held legally liable (whether in contract, tort

(including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or

consequential loss in the use of these circuit applications, under any circumstances.

Life support

Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written

approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body

or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions

for use provided in the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or to affect its safety or effectiveness.

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For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.

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To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Incorporated or one of our regionally

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ESD (Electrostatic discharge)

Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The

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can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of

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All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE

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Product status key:

“Preview” Future device intended for production at some point. Samples may be available

“Active” Product status recommended for new designs

“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect

“Not recommended for new designs” Device is still in production to support existing designs and production

“Obsolete” Production has been discontinued

Datasheet status key:

“Draft version” This term denotes a very early datasheet version and contains highly provisional

information, which may change in any manner without notice.

“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.

However, changes to the te st conditions and specifications may occur, at any time and without notice.

“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to

specifications may occur, at any time and without notice.

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