G E SOLID STATE OL DEgP3875082 OOLIL7H 1 I Optoelectronic Specifications +Parameters are JEDEC registered values. 2. OVERALL INSTALLED DIMENSION. TH41- 35 Photon Coupled Isolator 4N29-4N29A-4N30 -4N31 4N32-4NS2A4N33 [ion aiteeers [nee jones Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier a | baa Tae | 300 ; 27, The GE Solid State 4N29 thru 4N33 devices consist of a gallium arsenide - | B04 sooo l 2 infrared emitting diode coupled witha silicon photodarlington amplifierin a > 406 F508 8 | ls dual in-line package. These devices are also available in surface-mount e | 01 | te [ 040 | .070 ka in SEATING G 2.28 2,80 080 sid packaging. en PLANE 4 - | ae] - | 988] 4 FEATURES: toy Jos yO 4 | 208} 08 908 012 High DC current transfer ratio Bi {= MT ate | oss 6 High isolation resistance - io Loss of ste | ef mp oe] a e 2500 volts isolation voltage bannd Gt eimocl Ls_[ ei | be | 2 | 20 e 1/O compatible with integrated circuits ; Tv i y | Nous \ Lt t 1. INSTALLED POSITION LEAD CENTERS. 2 -o w Covered under U.L. component recognition program, reference file E51868 C) (unless otherwise specified) absolute maximum ratings: (25 +Storage Temperature -55 to 150C, Operating Temperature 9. THESE MEASUREMENTS ARE MADE FROM THE SEATING PLANE.! 4, FOUR PLACES. -5 to 100C, Lead Soldering Time (at 260C) 10 seconds. INFRARED EMITTING DIODE PHOTO-DARLINGTON {Power Dissipation *150 milliwatts +Power Dissipation **150 milliwatts Forward Current (Continuous) 80 milllamps +Vcto 30 volts {Forward Current (Peak) 3 ampere tVcno 30 volts (Pulse width 300usec, 2% duty cycle) BBO 5 volts +Reverse Voltage yolts Collector Current (Continuous) 100 milliamps *Derate 2,0mW/C above 25C ambient, *#Derate 2,.0mW/C above 25C ambient, 4 Total device dissipation @ Ta = 25C, Pp 250 mW. +Derate 3.3 mW/C above 25C ambient. individual electrical characteristics (25C) INFRARED EMITTING TYP. | MAX, UNITS PHOTO-DARLINGTON MIN. | TYP.) MAX, UNITS Forward Voltage 1,2 | 1.5 | volts {Breakdown Voltage - ViprycBo 30 | - | - | volts (Ip = 10mA) (Io = 100KA, Ip = 0) +Breakdown Voltage - Vipryceo 30} - | -_ | volts + Reverse Current ~ |100 | microamps}| (Ig = 1mA, Ip = 0) (VR = 3V) +Breakdown Voltage V@ryezo 5 | - | [volts (Ip = 100pA, If = 0) Capacitance 50 ~ picofarads || +Collector Dark Current IcEo - | [100 jnanoamps V=0,f = 1 MHz (Voce = L0V, Ip = 0) coupled electrical characteristics (25C) MIN. | TYP. | MAX, UNITS {Collector Output Current (Ip = 10mA, Vcr = 10V) 4N32, 4N32A, 4N33 | 50 - - mA 4N29, 4N29A, 4N30 | 10 | - - mA . 4N31 5 - - mA +Saturation Voltage Collector Emitter 4N29,29A,30,32,32A,33 - - 1,0 | volts (Ip = 8mA, Io = 2MA) 4N31 - - 1,2 | volts Resistance IRED to Photo-Transistor (@ 500 volts) - 100 | = gigaohms Capacitance ~ IRED to Photo-Transistor (@ 0 volts, f= 1 MHz) - i - | picofarad +Isolation Voltage 60 Hz with the input terminals (diode) 4N29,29A,32,32A 2500 |] - volts (peak) shorted together and the output terminals (transistor) 4N30, 4N31, 4N33 1500} - volts (peak) shorted together 4N29A, 4N32A 11775 | _ volts (RMS) (1 sec.) +Switching Speeds: Ic =50mA, Ip = 200mA) Figure 1 Turn-On Time ton - - 5 microseconds Turn-Off Time tore 4N29, 4N29A, 4N30, 4N31 - - 40 | microseconds Turn-Off Time torr 4N32, 4N32A, 4N33 - - 100 | microseconds VDE Approved to 0883/6.80 0110b Certificate # 35025 198'G E SOLID STATE ae OL de ff3a7soa1 coins a we a ed 4N29-33 Optoetectronic Specifications TY RS NC. Voc z +10V & 2 6 R 5 ee ee ee 1 PULSE 5 A", ir 5 PULSE, E INPUT OW OUTPUT 8 a N iRED PHOTO ' 2 x TRANSISTOR z 2 4 i = 2 _ oO IF Lite = = PULSE WIOTH F 1.Oms Ip- INPUT CURRENT- mA SWITCHING TIME TEST CIRCUIT : OUTPUT CURRENT VS INPUT CURRENT - Zz @ 5 e t 5 5 5% 3 3 3 a 8 N < Z i a = gto 5 NORMALIZED . Voge * SY + 2 Tr 2lOma ag The 425C Vp-VOLTS Vp - FORWARD VOLTAGE VOLTS: -55 +18 100 25 65 Ta- AMBIENT TEMPERATURE C * OUTPUT CURRENT VS TEMPERATURE INPUT CHARACTERISTICS ioe NORMALIZED Vce =10 lp =10mA Ta =25C NORMALIZED TO: Ico - NORMALIZED OUTPUT CURRENT Tor ~ NORMALIZED DARK CURRENT Ta 2 +25%C 001 0.4 1 . Vg - COLLECTOR TO EMITTER VOLTAGE ~ VOLTS +4 +65 +100 Ta -AMBIENT TEMPERATURE - C OUTPUT CHARACTERISTICS NORMALIZED DARK CURRENT VS TEMPERATURE 199G E SOLID STATE 01 eff aazsoan oorse7 5 Optoelectronic Specifications Fo! -83 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide infrared emitting diodes coupled with asilicon phototransistor ina dual in-line package. These devices are also available in surface- mount packaging. eearING FEATURES: TNE cele E - a+| e Fast switching speeds t= 4 | High DC current transfer ratio = a ey - High isolation resistance l 1 fs ty ft 4G + 8 c (Tor viewi] $ High isolation voltage iM , |g | | e 1/O compatible with integrated circuits - t7TY #3 Covered under U.L. component recognition program, reference file 51868 \ salt rf . 1 . . . A absolute maximum ratings: (25C) (unless otherwise specified) | T y 9 ( t INFRARED EMITTING DIODE s lo * Power Dissipation Ta = 25C #100 milliwatts * Power Dissipation Te = 25C 100 milliwatts svmeo. LMULLIMETERS INCHES | ates Cicindicates collector lead temperature 1/32" from case) min. | Max. [| MIN. | MAX. * Forward Current (Continuous) 60 milliamps 4 8 * ae? 390 I 380 1 Forward Current (Peak) 3 ampere c 06 8 64 oe OO 2 Pulse width 1 usec, 300 pps) E | son | - | 200] 3 * Reverse Voltage 6 volts f 38 aa0 too vO H - | 26 - | oa | 4 * 2 J 203| 305] 008 | .012 Derate 1.33mW/C above 25C 1} aga x oO Mi M = Ss - 1s N aaj - | ow] - P - | 963 - | 37 PHOTO-TRANSISTOR r | 292 | 343 | 11s | 135 * Power Dissipation Ta=25C 800 milliwatts s | 610 | 686 | 240 | 270 secisagi = ani NOTES: * Power Dissipation Te= 25C RaHSO0 1 milliwatts 1. INSTALLED POSITION LEAD CENTERS. (Ic indicates collector lead temperature 1/32 from case) 2. OVERALL INSTALLED DIMENSION. * VcEO 30 volts 3 THESE MEASUREMENTS ARE MADE FROM THE * Vcso 70 vaits 4. FOUR PLACES. * VECO 7 volts ro---4 * Collector Current (Continuous) 100 milliamps ' t | nid 5 YerDerate 4.0mW/C above 25C 3 | ! tehDerate 6.7mW/C above 25C Lod TOTAL DEVICE * Storage Temperature -55 to 150C * Operating Temperature -55 to 100C. * Lead Soldering Time (at 260C) 10 seconds. Relative Humidity 85%@85C * Input to Output Isolation Voltage 4N35 2500 Vrms) 3550 V (peak) 4N36 1750 Vins) 2500 Vipeak) 4N37 1050 Vins) 1500 V (peak) Indicates JEDEC registered values VDE Approved to 0883/6.80 0110b Certificate # 35025, except type 4N37 200.G E SOLID STATE O1 ref 3475081, QOL??? 7? T 4N35-37 Optoelectronic Specifications 3875081 GE SOLID STATE O1E 19677 D THF3 individual electrical characteristics (25C) (unless otherwise specified) [INFRARED_EMITTING, sympot | min. | maAx.| UNITS |PHOTO-TRANSISTOR SYMBOL _|MIN, | TYP. | MAX.| UNITS DIODE * Forward Voltage VE 8 15 volts * Breakdown Voltage V(BR) CEO 30 - ~_ volts (BR) (ip = 10 mA) (ic = 10 mA, Ip = 0) * Forward Voltage VE O 1.7. | volts * Breakdown Voltage V(BR) CBO 70 - - volts (Ip = 10 mA) (c= 100uA, Ip = 0) = -50, Ta = 35C * Breakdown Voltage V(BR) ECO 7 ~ = volts * Forward Voltage VF 7 1.4 | volts (ig = 100uA, Ip = 0) oF . oe Collector Dark Current IcEO - 5 50 nanoamps A (Vcg = 10V, Ip = 0) * _ . VR wo IR 10 mucroamPs | s Collector Dark Current ICEO - 500 | microamps R (Veg = 30V, Ip = 0) Capacitance Cy 100 | picofarads TA = 100C (V=O, f=1 MHz) Capacitance CcE - 2 - picofarads (Vcg = 10V, = 1MHz) coupled electrical characteristics (25C) (unless otherwise specified) MIN. TYP. MAX. UNITS * DC Current Transfer Ratio (Ip = 10mA, Vcg = 10V) 100 - ~ Ge * DC Current Transfer Ratio (Ip = 10mA, Vog = 10V) Ta =-55C 40 - - % * DC Current Transfer Ratio (Ip = 10mA, Vcg = 10V) Ta = +100C 40 - - % * Saturation Voltage-Collector To Emitter (lp = 10mA, Ic = 0.5mA) - - 0.3 volts * Input to Output Isolation Current (Pulse Width = 8 msec) (See Note 1) Input to Output Voltage = 3550 V (peak) 4N35 - - 100 microamps . Input to Output Voltage = 2500 V (peak) 4N36 - - 100 microamps Input to Output Voltage = 1500 Vpeaxy 9 4N37 - - 100 microamps * Input to Output Resistance (Input to Output Voltage = SO0V - See Note 1) 100 - - gigaohms * Input to Output Capacitance (Input to Output Voltage = 0, f = 1MHz - See Note 1) - - 2 picofarads * Tum on Time~ ton (ec = LOV, I = 2MA, Ry = 100Q) (See Figure 1) - 5 10 microseconds * Tum off Time toff (Voc = 10V, Ic = 2MA, RL = 1008) (See Figure 1) - 5 10 microseconds Note 1: Tests of input to output isolation current resistance, and capacitance are performed om with t': input terminals (diode) shorted together and the output terminals (transistor) shorted together * Indicates JEDEC registered values. INPUT an PULSE L___._ 90% ce RL OUTPUT fabs = i\-10% | l td bh 1 TEST CRCUT VOLTAGE WAVE FORMS Adjust Amplitude of Input Pulse for Output (Ic) of 2mA FIGURE 1 201G E SOLID STATE O1 De ff saz7soa1 OOL5b?74 4 Optoelectronic Specifications 4N35-37 TUF 3 IpH FORWARD CURRENT = mA ) TEMPERATURE COEFFICIENT mV/C . 10 Ve~VOLTS Vp- FORWARD VOLTAGE - VOLTS O41 Ip- conwann CURRENT- mA 1, INPUT CHARACTERISTICS 2. FORWARD VOLTAGE TEMPERATURE COEFFICIENT 3 3 topo ~ NORMALIZED OARK CURRENT : 6 IcEo~ NORMALIZED DARK CURRENT NORMALIZED TO: NORMALIZED TO: Voge =10 Vop=10 Tr 325C Ts =25C Ip =O {f =O 1 100 30 100 125 Ta- AMBIENT TEMPERATURE - C Ta- AMBIENT TEMPERATURE - C 3. DARK [cep CURRENT VS TEMPERATURE 4. Icgo VS TEMPERATURE 10 =10mA A 225C Ice{ON) - NORMALIZED OUTPUT CURRENT tcgo - NORMALIZED OUTPUT CURRENT Veg - COLLECTOR TO EMITTER VOLTAGE ~ VOLTS 0.01 a4 1 10 Vee - COLLECTOR TO EMITTER VOLTAGE - VOLTS 5. OUTPUT CHARACTERISTICS 6 QUTPUT CHARACTERISTICS 202GE SOLID STATE 4N35-37 02 pe sarsoas cons o Optoelectronic specincauons aoa, ft TYPICAL CHARACTERISTICS t a 1.0 10 Ip - INPUT CURRENT - mA 7, OUTPUT CURRENT V8 INPUT CURRENT 2 2 TO: Vog BIOV le 10 mA 0.001 Ta = 25C 50 35 36 80 7 160 Ta - AMBIENT TEMPERATURE - C Icco- NORMALIZED OUTPUT CURRENT 9. OUTPUT CURRENT VS TEMPERATURE AL * 1000, 19 2 2 mA, 41 fon * 0.7 pe, tot 9.3.4 tos AL 1K . 7O1 1 gems 100 erca-420d SWITCHING SPEED V8. COLLECTOR CURRENT (NOT SATURATED) 11. SWITCHING TIMES V8 OUTPUT CURRENT T4183 t= INFUT CURRENT = mA 8. OUTPUT CURRENT COLLECTOR TO BASE V8 INPUT CURRENT NORMALIZED TO: Vog 10 ip 10 fone Icen NORMALIZED OUTPUT CURRENT 10K 100 K Two Rog - BASE RESISTOR - KO 10, OUTPUT CURRENT V8 BAGE EMITTER RESISTANCE m10V = 1008 *10mA =2O@a = 5.048 10 mA 2.448 NORMALIZED TURN-ON AND TURN-OFF TIMES 10 100 @ge~ BASE EMITTER RESISTOR - KO 42, SWITCHING TIME V8 Ree 203