Philips Semiconductors Product specification meee ee ee ee NPN medium power transistors BCP54; BCP55; BCP56 I FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). { base 2,4 collector APPLICATIONS 3 emitter Switching. DESCRIPTION 4 NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. UU U: Top view MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcsBo collector-base voltage open emitter BCP54 - 45 Vv BCP55 - 60 Vv BCP56 - 100 Vv VcEo collector-emitter voltage open base BCP54 - 45 Vv BCP55 - 60 Vv BCP56 - 80 Vv VeBo emitter-base voltage open collector - 5 Vv Ic collector current (DC) - 1 A lcm peak collector current - 1.5 A IBM peak base current - 0.2 A Prot total power dissipation Tamb < 25 C; note 1 - 1.33 WwW Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature 65 +150 C Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General Part of associated Handbook. 1999 Apr 08 2Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient note 1 94 K/W Rihj-s thermal resistance from junction to soldering point 13 K/W Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General Part of associated Handbook. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IcBo collector cut-off current le = 0; Vcp = 30 V - - 100 nA le = 0; Vop = 30 V; Tj = 125C - - 10 HA lEBo emitter cut-off current Ic = 0; Vep=5V - - 100 nA hee DC current gain Ic =5 MA; Voce =2V 25 - - Io = 150 MA; Vcp = 2 V 63 - 250 Ilo = 500 MA; Vcp = 2V 25 - - hee DC current gain Ic = 150 MA; Vee =2V - BCP55-10; 56-10 63 - 160 BCP54-16; 55-16; 56-16 100 - 250 VecEsat collector-emitter saturation voltage | lc =0.5 A; lp =50 mA - - 500 mV VBE base-emitter voltage Ic = 0.5 A; Vop =2V - - 1 V ff transition frequency Io = 10 MA; Vce = 5 V; f = 100 MHz | 130 - MHz heey DC current gain ratio of the llc] = 150 mA; |Vcel = 2 V - - 1.6 Rees complementary pairs 1999 Apr 08Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads $OT223 UF 7 Ly | ad | He t 1 Q a |, 4 +4 + ++ | rr? I I 1 TI 2 3 _. Pp | e+ el' L- ero [e] 0 2 4mm Linaitiriitisiitiiiit scale DIMENSIONS (mm are the original dimensions) UNIT A Ay bp by c D E e e, He Lp Q v w y mm ie 0.10 | 0.80] 3.1 | 032] 67 3.7 7.3 1.1 | 0.95 0.01] 060| 29 |o22| 63 | 33 | * | 23) 67 | o7 |oss| F | OT) REFERENCES OUTLINE EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE 96-444 SOT223 on 97-02-28 1999 Apr 08 4