DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3483 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3483 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3483 TO-251 (MP-3) 2SK3483-Z TO-252 (MP-3Z) FEATURES * Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A) * Low Ciss: Ciss = 2300 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0V) VDSS 100 V Gate to Source Voltage (VDS = 0V) VGSS 20 V Drain Current (DC) ID(DC) 28 A ID(pulse) 60 A Total Power Dissipation (TC = 25C) PT 40 W Total Power Dissipation (TA = 25C) PT 1.0 W Channel Temperature Tch 150 C Drain Current (Pulse) Note1 Storage Temperature Tstg -55 to +150 C Single Avalanche Current Note2 IAS 25 A Single Avalanche Energy Note2 EAS 62.5 mJ (TO-252) Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15068EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2001 2SK3483 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 14 A 9.0 18 RDS(on)1 VGS = 10 V, ID = 14 A 41 52 m RDS(on)2 VGS = 4.5 V, ID = 14 A 45 59 m Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 2300 pF Output Capacitance Coss VGS = 0 V 230 pF Reverse Transfer Capacitance Crss f = 1 MHz 120 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 14 A 12 ns VGS = 10 V 9 ns RG = 0 53 ns 5 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 80 V 49 nC Gate to Source Charge QGS VGS = 10 V 7 nC QGD ID = 28 A 13 nC VF(S-D) IF = 28 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 28 A, VGS = 0 V 73 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 175 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 D.U.T. L 50 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS = 1 s Duty Cycle 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D15068EJ2V0DS td(on) ton tf toff 2SK3483 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 45 40 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 35 30 25 20 15 10 0 5 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - C 50 75 100 125 150 175 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 10 d ite V) im 10 L ) = on S( GS DC RDat V ( ID(DC) = 28 A ID(pulse) = 60 A 10 PW 0 P 10 Li owe m m r s ite D d iss ip at io n 1 m s = 10 s s 1 TC = 25C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A 1000 Rth(ch-A) = 125C/W 100 Channel to Ambient 10 Rth(ch-C) = 3.13C/W Channel to Case 1 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D15068EJ2V0DS 10 100 1000 3 2SK3483 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 60 Pulsed 50 10 ID - Drain Current - A ID - Drain Current - A V GS = 10 V 40 4.5 V 30 20 10 T A = 150C 75C 25C -40C 1 0.1 0.01 V D S = 10 V P ulsed 0 0.0 0.001 1.0 2.0 3.0 4.0 5.0 0 1 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 4 5 100 V SD = 10 V I D = 1 mA 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 T A = -40C 25C 75C 150C 10 1 0.1 V D S = 10 V P ulsed 0.01 0.01 0.1 80 70 60 V GS = 4.5 V 40 10 V 30 20 10 0 1 10 100 RDS(on) - Drain to Source On-state Resistance - m Pulsed 0.1 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 50 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 90 1 75 100 125 150 175 Tch - Channel Temperature - C RDS(on) - Drain to Source On-state Resistance - m 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4.0 ID - Drain Current - A 4 2 VGS - Gate to Source Voltage - V 80 Pulsed 70 ID = 28 A 14A 60 50 40 30 5.6 A 20 10 0 0 2 4 6 8 10 12 14 16 VGS - Gate to Source Voltage - V Data Sheet D15068EJ2V0DS 18 20 2SK3483 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 120 10000 100 80 V GS = 4.5 V 60 10 V 40 20 C iss 1000 25 50 10 0.01 75 100 125 150 175 0.1 SWITCHING CHARACTERISTICS 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 100 V DD = 50 V V GS = 10 V RG = 0 100 10 ID = 28 A 90 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V t d(off) t d(on) 10 tr tf V DD = 80 V 50 V 20 V 80 70 8 V GS 60 50 40 4 30 20 2 V DS 10 1 0 0.1 1 10 6 100 0 0 ID - Drain Current - A 5 10 15 20 25 30 35 40 45 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 1000 di/dt = 100 A / s VGS = 0 V trr - Reverse Recovery Time - ns P ulsed 100 V G S = 10 V 10 0 V 1 0.1 100 10 1 0.01 0.0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V 0.1 1 10 100 IF - Drain Current - A Data Sheet D15068EJ2V0DS 5 VGS - Gate to Drain Voltage - V 0 C rss 100 0 -50 -25 C oss Tch - Channel Temperature - C ISD - Diode Forward Current - A VGS = 0 V f = 1MHz Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK3483 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 V DD = 50 V V GS = 20 0 V R G = 25 Starting T ch = 25C Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 100 I AS = 25 A E AS = 62.5 m J 10 1 0.01 100 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C L - Inductive Load - mH 6 V DD = 50 V V GS = 20 0 V R G = 25 IAS 25 A Data Sheet D15068EJ2V0DS 2SK3483 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1.1 0.2 +0.2 0.5 -0.1 +0.2 0.5 -0.1 0.75 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 1.5 -0.1 2.3 0.2 1.0 MIN. 1.8TYP. 0.5 0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1 0.2 13.7 MIN. 3 7.0 MIN. 2 5.5 0.2 1.6 0.2 1 4 5.5 0.2 10.0 MAX. 6.5 0.2 5.0 0.2 0.5 0.1 4 +0.2 2.3 0.2 2.0 MIN. 5.0 0.2 1.5 -0.1 6.5 0.2 +0.2 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15068EJ2V0DS 7 2SK3483 * The information in this document is current as of August, 2004. The information is subject to change without notice. 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