AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO3422 is Pb-free (meets ROHS & Sony 259 specifications). AO3422L is a Green Product ordering option. AO3422 and AO3422L are electrically identical. VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160m (VGS = 4.5V) RDS(ON) < 200m (VGS = 2.5V) D TO-236 (SOT-23) Top View G G D S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C Current A TA=70C ID Pulsed Drain Current B IDM TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TJ, TSTG Symbol Alpha & Omega Semiconductor, Ltd. Units V V 2.1 1.7 A 10 1.25 0.8 -55 to 150 PD t 10s Steady-State Steady-State Maximum 55 12 RJA RJL Typ 75 115 48 W C Max 100 150 60 Units C/W C/W C/W AO3422 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Source leakage current Gate Threshold Voltage On state drain current ID=10mA, VGS=0V VDS=44V, VGS=0V gFS VSD IS VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=2.1A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 0.6 10 TJ=125C VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=27.5V, ID=2.1A VGS=10V, VDS=27.5V, RL=12, RGEN=3 IF=2.1A, dI/dt=100A/s IF=2.1A, dI/dt=100A/s Max Units 55 VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=2.1A Static Drain-Source On-Resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ V TJ=55C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Min Conditions 1.3 1 5 100 2 A nA V A 125 175 157 11 0.78 160 210 200 m 1 1 S V A 214 31 12.6 1.3 300 2.6 0.6 0.8 2.3 2.4 16.5 2 20 17 3.3 nC nC nC ns ns ns ns 30 ns nC 3 m pF pF pF A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0: Oct 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 10 10V 3.5V 8 6 2.5V ID(A) ID (A) VDS=5V 6 5V 4 4 125C VGS=2V 2 2 25C 0 0 0 1 2 3 4 5 1 1.25 VDS (Volts) Fig 1: On-Region characteristics 1.75 2 2.25 2.5 VGS(Volts) Figure 2: Transfer Characteristics 200 Normalized On-Resistance 2 180 RDS(ON) (m) 1.5 VGS=2.5V 160 140 120 VGS=4.5V 100 1.8 VGS=4.5 1.6 1.4 VGS=2.5V 1.2 1 0.8 0 1 2 3 4 5 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 360 1E+00 125C ID=2.3A 125C 1E-01 260 IS (A) RDS(ON) (m) 310 210 160 1E-02 25C 1E-03 110 25C 1E-04 60 1E-05 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.4 AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 360 VDS=27.5V ID=2.1A Ciss 320 Capacitance (pF) VGS (Volts) 4 3 2 280 240 200 160 Coss 120 Crss 80 1 40 0 0 0 1 2 0 3 5 100.0 Power (W) ID (Amps) 10.0 100s 0.1s 1.0 10ms 15 15 TJ(Max)=150C TA=25C RDS(ON) limited 10 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 1s TJ(Max)=150C TA=25C 10 5 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=100C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000