2N5114
2N5115
2N5116
SILICON
P-CHANNEL JFETS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5114, 2N5115,
and 2N5116 are silicon P-Channel JFETs designed for
switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Gate-Drain Voltage VGD 30 V
Gate-Source Voltage VGS 30 V
Gate Current IG 50 mA
Power Dissipation PD 500 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5114 2N5115 2N5116
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
IGSS V
GS=20V - 500 - 500 - 500 pA
IGSS V
GS=20V, TA=150°C - 1.0 - 1.0 - 1.0 A
IDSS V
DS=18V 30 90 - - - - mA
IDSS V
DS=15V - - 15 60 5.0 25 mA
ID(OFF) V
DS=15V, VGS=12V - 500 - - - - pA
ID(OFF) V
DS=15V, VGS=7.0V - - - 500 - - pA
ID(OFF) V
DS=15V, VGS=5.0V - - - - - 500 pA
ID(OFF) V
DS=15V, VGS=12V, TA=150°C - 1.0 - - - - A
ID(OFF) V
DS=15V, VGS=7.0V, TA=150°C - - - 1.0 - - A
ID(OFF) V
DS=15V, VGS=5.0V, TA=150°C - - - - - 1.0 A
BVGSS I
G=1.0µA 30 - 30 - 30 - V
VGS(OFF) V
DS=15V, ID=1.0nA 5.0 10 3.0 6.0 1.0 4.0 V
VGS(f) I
G=1.0mA - 1.0 - 1.0 - 1.0 V
VDS(ON) I
D=15mA - 1.3 - - - - V
VDS(ON) I
D=7.0mA - - - 0.8 - - V
VDS(ON) I
D=3.0mA - - - - - 0.6 V
rDS(ON) I
D=1.0mA, VGS=0 - 75 - 100 - 150
rds(ON) V
GS=0, ID=0, f=1.0kHz - 75 - 100 - 150
Ciss V
DS=15V, VGS=0, f=1.0MHz - 25 - 25 - 25 pF
Crss V
GS=12V, VDS=0, f=1.0MHz - 7.0 - - - - pF
Crss V
GS=7.0V, VDS=0, f=1.0MHz - - - 7.0 - - pF
Crss V
GS=5.0V, VDS=0, f=1.0MHz - - - - - 7.0 pF
TO-18 CASE
R1 (4-March 2014)
www.centralsemi.com