1
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2A Programmable Protector
TISP6NTP2A
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
Device Symbol
Independent Overvoltage Protection for Two SLICs in Short
Loop Applications:
– Wide 0 to -90 V Programming Range
– Low 5 mA max. Gate Triggering Current
– High 150 mA min. (85 °C) Holding Current
– Specified 1.2/50 & 0.5/700 Limiting Voltage
– Full -40 °C to 85 °C Temperature Range
Rated for Common Impulse Waveforms
How To Or der
D Package (Top View)
Description
The TISP6NTP2A has been designed for short loop systems
such as:
– WILL (Wireless In the Local Loop)
– FITL (Fibre In The Loop)
– DAML (Digital Added Main Line, Pair Gain)
– SOHO (Small Office Home Office)
– ISDN-TA (Integrated Services Digital Network -
Terminal Adaptors)
Typical TISP6NTP2A Router Application
Voltage Impulse
Form Current Impulse
Shape ITSP
A
10/1000 µs10/1000 µs20
10/700 µs5/310 µs25
1.2/50 µs8/20µs75
2/10 µs2/10µs85
TERMINAL ADAPTOR
LINE LAN
POTS 2
POTS 1SLIC 1
SLIC 2
TISP6
NTP2A
TRANSCEIVER
PROCESSOR
TRANSCEIVER
Device Pa ckage C arrier Order #
TISP6NTP2A D, Small-Outline Tape and Ree l TISP6NTP2ADR
Tube TISP6NTP2AD
MDRXAM
1
2
3
45
6
7
8K2
A
A
K4
G1,G2
K1
K3
G3,G4
SDRXAI
K1
K3
K4
K2
G3,G4
A
A
G1,G2
.............................................. UL Recognized Component
2
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (continued)
These systems often have the need to source two POTS (Plain Old Telephone Service) lines, one for a telephone and the other for a facsimile
machine. In a single surface mount package, the TISP6NTP2A protects the two POTS line SLICs (Subscriber Line Interface Circuits) against
overvoltages caused by lightning, a.c. power contact and induction.
The TISP6NTP2A has an array of four buffered P-gate forward conducting thyristors with twin commoned gates and a common anode
connection. Each thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each
thyristor. The buffer transistors reduce the gate supply current.
In use, the cathodes of an TISP6NTP2A thyristor are connected to the four conductors of two POTS lines (see applications information). Each
gate is connected to the appropriate negative voltage battery feed of the SLIC driving that line pair. By having separate gates, each SLIC can
be protected at a voltage level related to the negative supply voltage of that individual SLIC. The anode of the TISP6NTP2A is connected to the
SLIC common.
Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2A antiparallel diode. Negative overvoltages are initially
clipped close to the SLIC negative supply by emitter follower action of the TISP6NTP2A buffer transistor. If sufficient clipping current flows, the
TISP6NTP2A thyristor will regenerate and switch into a low voltage on-state condition. As the overvoltage subsides, the high holding current of
the TISP6NTP2A prevents d.c. latchup.
Rating Symbol Value Unit
Repetitive peak off-state voltage, IG=0, -40°C≤TJ≤85 °CV
DRM -100 V
Repetitive peak gate-cathode voltage, VKA =0, -40°C≤TJ≤85 °CV
GKRM -90 V
Non-repe titiv e peak on-state puls e current, -40 °C≤TJ≤85 °C, (see Notes 1 and 2)
ITSP A
10/1000 µs(Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 20
0.2/310 µs(I3124, open-circuit voltage wave shape 0.5/700 µs)
5/310 µs(ITU-T K.20 & K.21, open-ci rcuit voltage wave shape 10/700 µs)
8/20 µs(IEC 61000-4-5:1995, open-circuit voltage wa ve shape 1.2/50 µs)
25
25
75
2/10 µs(Bellcore GR -1089-CORE, Issue 1, November 1994, Section 4) 85
Non-repetitiv e peak on-state curr ent, 50/60 Hz, -40 °C≤TJ≤85 °C, (see Notes 1 and 2)
ITSM A
100 ms 7
1s
5s
300 s
900 s
2.7
1.5
0.45
0.43
Non-repetitive peak gate current, 1/2 µspulse, cathodes commoned (see Note 1) IGSM 25 A
Operating fr ee-air temperature range TA-40 to +85 °C
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NO TES: 1. Initially, the protector must be in thermal equilibrium with -40 °C≤TJ≤85 °C. The surge may be repeated after the device returns
to its initial conditions.
2. These non-repetitive rated currents are peak values for either polarity. The rated curre nt values may be applied to any cathode-
anode term in al pair. Additionally, all cathode-anode termi nal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair). Above 85 °C, derate
linearly to zero at 150 °C l ead temperature.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
TISP6NTP2A Programmable Protector
3
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Recommended Operating Conditions
Min. Typ. Max. Unit
CGGate decoupling capacitor 100 220 nF
R1, R2
Series resistor for GR-1089-CORE first-level sur ge survival
Series resistor for ITU-T recommendation K.20
Series resistor for ITU-T recommendation K.21
Series resistor for IEC 61000-4-5:1995, class 5, 1.2/50 or 10/700
40
12
20
4
Ω
Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted)
Param et e r Test Condit io ns Min. Typ. Max. Unit
IDOf f-state current VD=V
DRM, IG=0 TJ=25°C-5µA
TJ=85°C-50µA
V(BO) Breakover voltage IT=-20 A, IEC 61000-4-5:1995 combination impulse generator,
VGG =-50V
IT=-18 A, I3124 impulse generator, VGG =-50V
-70
-70 V
t(BR) Breakdown time IT=-18 A, I3124 impulse generator, V(BR) <-50V 2 µs
VFForward voltage IF=0.6A, tw=500 µs, VGG =-50V
IF=18A, t
w=500 µs, VGG =-50V 3
5V
VFRM Peak forward recovery
voltage
IF=20A, IEC 61000-4-5:1995 combination impulse generator,
VGG =-50V
IF=18A, I3124 impulse generator, VGG =-50V
15
15 V
tFR Forward recovery time IF=18A, I3124 impulse generator,
VGG =-50V VF > 10 V
VF > 5 V 2
4µs
IHHolding curr ent IT=-1A, di/dt = 1A/ms, VGG =-50V, T
J=85°C-150 mA
IGKS Gate reverse current VGG =V
GKRM, VAK =0 TJ=25°C-5µA
TJ=85°C-50µA
IGAT Gate reverse current,
on state IT=-0.6A, t
w=500 µs, VGG =-50V -1 mA
IGAF
Gate reverse current,
forwar d conducting
state IF=0.6A, tw=500 µs, VGG =-50V -40 mA
IGT Gate trigger current IT=-5A, t
p(g) 20≥µs, VGG =-50V 5 mA
VGT Gate trigger voltage IT=-5A, t
p(g) 20≥µs, VGG =-50V 2.5 V
CAK Anode-cathode of f-
state capacitance f=1MHz, V
d=1V, I
G=0, (see Note 3) VD=-3V 100 pF
VD=-50V 60 pF
NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
TISP6NTP2A Programmable Protector
Parameter Test Conditions Min. Typ. Max. Unit
RθJA Junction to free air thermal r esista nce Ptot =0.52W, T
A=85 °C, 5 cm2, FR 4 PCB 160 °C/W
4
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP6NTP2A Programmable Protector
Figure 1. Principal Terminal And Gate Transfer Characteristics
PM6XAIA
-v
I
S
V
S
V
GG
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Forward
Conduction
Characteristic
+v
+i
I
F
V
F
I
FSM
(= |I
TSM
|)
I
FSP
(= |I
TSP
|)
-i
Quadrant III
Switching
Characteristic
V
GK(BO)
PRINCIPAL TERMINAL V-I CHARACTERISTIC
I
GT
I
GAT
I
GAF
I
F
+i
K
-i
K
I
T
-i
G
+i
G
GATE TRANSFER
CHARACTERISTIC
I
K
I
G
5
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Operation of Gated Protectors
TISP6NTP2A Programmable Protector
APPLICATIONS INFORMATION
Negative overvoltages (Figure 2) are initially clipped close to the SLIC negative supply rail value (VBAT) by the conduction of the transistor
base-emitter and the thyristor gate-cathode junctions. If sufficient current is available from the overvoltage, then the thyristor will crowbar into
a low voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the crowbar thyristor prevents
d.c. latchup. The common gate of each thyristor pair is connected the appropriate SLIC battery feed voltage (VBAT1 or VBAT2).
The negative protection voltage, V(BO), will be the sum of the gate supply (VBAT) and the peak gate (terminal)-cathode voltage (VGT). Under
a.c. overvoltage conditions VGT will be less than 2.5 V. The integrated transistor buffer in the TISP6NTP2A greatly reduces protectors source
and sink current loading on the VBAT supply. Without the transistor, the thyristor gate current would charge the VBAT supply. An electronic
power supply is not usually designed to be charged like a battery. As a result, the electronic supply would switch off and the thyristor gate
current would provide the SLIC supply current. Normally the SLIC current would be less than the gate current, which would cause the supply
voltage to increase and destroy the SLIC by a supply overvoltage. The integrated transistor buffer removes this problem.
Fast rising impulses will cause short term overshoots in gate-cathode voltage. The negative protection voltage under impulse conditions will
also be increased if there is a long connection between the gate decoupling capacitor and the gate terminal. During the initial rise of a fast
impulse, the gate current (IG ) is the same as the cathode current (IK ). Rates of 60 A/µs can cause inductive voltages of 0.6 V in 2.5 cm of
printed wiring track. To minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking
should be minimized.
Figure 2 and Figure 3 show how the TISP6NTP2A limits overvoltages. The TISP6NTP2A thyristor sections limit negative overvoltages and the
diode sections limit positive overvoltages.
.
Figure 3. Positive Overvoltage Condition
Figure 2. Negative Overvoltage Condition
C2
100 n F
I
G
SLIC 2
TISP6NTP2A
I
K
AI6XBN
C1
100 n F
SLIC 1
SLIC
PROTECTOR
0 V
0 V
V
BAT2
V
BAT1
R1A
R1B
R2A
R2B
C2
100 n F
I
G
SLIC 2
TISP6NTP2A
AI6XBO
C1
100 n F
SLIC 1
SLIC
PROTECTOR
0 V
0 V
V
BAT2
V
BAT1
I
F
R1A
R1B
R2A
R2B
6
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Operation of Gated Protectors (continued)
TISP6NTP2A Programmable Protector
APPLICATIONS INFORMATION
Positive overvoltages (Figure 3) are clipped to ground by forward conduction of the diode section in the TISP6NTP2A. Fast rising impulses will
cause short term overshoots in forward voltage (VFRM).
Central Office Application to Bellcore GR-1089-Core Issue 1
The most stressful impulse for first-level surge testing (section 4.5.7) is the 1000 V, 10/1000 impulse. To limit the circuit current to the
TISP6NTP2A rating of 20 A requires the total circuit resistance to be 1000/20 = 50 Ω. Subtracting the generator fictive source impedance of
10 Ω gives 40 Ω as the required series resistor value for the TISP6NTP2A (R1A, R1B, R2A and R2B). The various first level impulse current
levels are shown in table 1. The maximum 1.2/50 and 2/10 current levels of 56 A are below the TISP6NTP2A ratings of 60 A and 85 A. In table
1, the designation 2x20 means that each conductor has a simultaneous peak current of 20 A and 2x20 = 40 A flows in the anode (ground)
connection.
Central Office Application to ITU-T Recommendation K.20
The test level of 1000 V 10/700 delivers a peak short-circuit current level of 25 A, which is equal to the TISP6NTP2A rated value. A series
resistor (R1A, R1B, R2A and R2B) is required to ensure coordinated operation with the primary protector at the 4000 V test level. The resistor
value will be set by the sparkover voltage of the primary protector. A sparkover voltage of 300 V will give a 300/25 = 12 Ω series resistor.
Local Subscribers Line Equipment to ITU-T Recommendation K.21
The test level of 1500 V 10/700 delivers a peak short-circuit current level of 37.5 A. To limit the circuit current to the TISP6NTP2A rating of 25 A
requires the total circuit resistance to be 1500/25 = 60 Ω. Subtracting the generator fictive source impedance of 40 Ω gives 20 Ω as the
required series resistor value for the TISP6NTP2A. Even at the 1500 V test level, this resistor develops 25x20 = 500 V, which should ensure the
coordination with the primary protector sparkover.
Table 1. First-level Surge Curr ents
Waveshape Open-cir cui t Vo lt ag e
VShort-circuit Current
AGen erator Resistance
ΩWire s Tested Total Series
Resistance
Ω
IT
A
2/10 2500 500 5 Both 22.5 2x56
1.2/50
8/20 2500 500 2 + 3/Wire Single 45 56
Both 28.5 2x53
10/1000 1000 100 10 Single 50 20
Both 25 2x20
7
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Indoor POTS Lines to ITU-T Recommendation K.21. K.22 and IEC 61000-4-5: 1995
TISP6NTP2A Programmable Protector
Internal POTS lines from WILL and ISDN-TA equipment are in a relatively unexposed environment. If these lines are galvanically isolated
(floating), the return path for any induced surges can only be through equipment capacitance or insulation breakdown.
The most stressful condition would be when the POTS lines are not galvanically isolated. Such a case is when an ISDN-TA has a common
connection between the incoming ISDN line and the internal POTS lines. The ISDN line is likely to be ground referenced and may have primary
protection at the subscriber connection. If the primary protection operates, it provides a direct return to ground.
ITU-T recommendation K.22 for a floating 4-conductor T/S bus uses a 1 kV 1.2/50 or 2/10 impulse, capacitively coupled via 8 nF to the bus
conductors. Very little circulating current is likely to flow during K.22 testing. If the T/S bus has a ground return, then the testing changes to
ITU-T recommendation K.21. The required series resistor values for K.21 and the TISP6NTP2A have been calculated earlier.
In IEC 61000-4-5: 1995 the highest specified test level is class 5. For unshielded symmetrically operated lines, class 5 testing uses a 4000 V
combination wave (1.2/50, 8/20) generator to apply a simultaneous impulse to all conductors. For the four conductors of the two POTS lines,
the currents are equalized by the use of specified 160 Ω feed resistors. As the generator fictive source impedance is 2 Ω, the peak current in
each conductor is 4000/(2x4 + 160) = 24 A. This is less than the 60 A TISP6NTP2A rating.
If the lines are long and exit the building, testing is done with a 10/700 generator. In this case the feed resistors are 100 Ω and the fictive
impedance is 15 Ω. The peak current in each conductor will be 4000/(15x4 + 100) = 25 A. This value is the same as the TISP6NTP2A rating.
As the equipment connected to the POTS line may have uncoordinated protection, it is desirable to provided the ring-tip pair current sharing to
the TISP6NTP2A by series resistors (R1A, R1B, R2A and R2B). A value of 4 Ω should be sufficient to ensure sharing.
APPLICATIONS INFORMATION
8
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
TISP6NTP2A Programmable Protector
D008 Plastic Small-outline Package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0.15 (0.006).
D. Lead tips to be planar within ±0.051 (0.002).
D008
8765
4
3
2
1
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
MDXXAAC
INDEX
4.80 - 5.00
(0.189 - 0.197)
5.80 - 6.20
(0.228 - 0.244)
3.81 - 4.00
(0.150 - 0.157)
1.35 - 1.75
(0.053 - 0.069)
0.102 - 0.203
(0.004 - 0.008)
0.28 - 0.79
(0.011 - 0.031)
0.51 - 1.12
(0.020 - 0.044)
4.60 - 5.21
(0.181 - 0.205)
0.36 - 0.51
(0.014 - 0.020)
0.25 - 0.50
(0.010 - 0.020)
0.190 - 0.229
(0.0075 - 0.0090)
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
x 45 ° N0M
8 Places
7 ° NOM
4 Places
7 ° NOM
3 Places
4 ° ± 4 °
DIMENSIONS ARE: MILLIMETERS
(INCHES)
9
JUNE 1998 - REVISED JUNE 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
TISP6NTP2A Programmable Protector
D008 Tape DImensions
0.8
(0.03)
1.50
(.059)
3.90 - 4.10
(.154 - .161)
5.40 - 5.60
(.213 - .220)
1.95 - 2.05
(.077 - .081)
7.90 - 8.10
(.311 - .319)
6.30 - 6.50
(.248 - .256)
11.70 - 12.30
(.461 - .484)
D008 Package (8-pin Small Outline) Single-Sprocket Tape
Direction of Feed
ø MIN.
Carrier Tape
Embossment
Cover
Tape
NOTES: A. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
Reel hub diameter:
Reel axial hole:
B. 2500 de vice s are on a reel.
MDXXATB
DIMENSIONS ARE: MILLIMETERS
(INCHES)
330 +0.0/-4.0
(12.992 +0.0/-.157)
100 ± 2.0
(3.937 ± .079)
13.0 ± 0.2
(.512 ± .008)
0 MIN.
MIN.
0.40
(0.016)
2.0 - 2.2
(.079 - .087)
1.50 - 1.60
(.059 - .063)
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