Rugged Power MOSFETs IRFP350R, IRFP351R, IRFP352R, IRFP353R File Number 2017 Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V rps(on) = 0.39 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: @ Single pulse avalanche energy rated B SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics G B High input impedance 925-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION The IRFP350R, IRFP351R, IRFP352R and IRFP353R are SOURCE advanced power MOSFETs designed, tested, and guaran- LJ i ; -teed to.withstand a specified level of energy in the break- pa down avalanche mode of operation. These are n-channel DRAIN ~ goran enhancement-mode silicon-gate power field-effect transis- (TAB) O _>_ tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- | J ers for high-power bipolar switching transistors requiring TOP VIEW Neate high speed and low gate-drive power. These types can be operated directly from integrated circuits. JEDEC TO-247 The IRFP-types are supplied in the JEDEC TO-247 plastic package. : Absolute Maximum Ratings P. t IRFP350R | IRFP351R | IRFP352R | IRFP353R Units Vos Drain - Source Voltage 400 350 400 350 Vv Vpcr Drain - Gate Voltage (Ras = 20 KQ) 400 350 400 350 Vv lo @ Te = 25C Continuous Drain Current 15 16 13 13 A Ip @ Te = 100C Continuous Drain Current 9.0 9.0 8.0 8.0 A lom Pulsed Drain Current @ 60 60 52 52 A Vos Gate - Source Voltage +20 Vv Pp @ Te = 25C Max. Power Dissipation 150 (See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14) w/c Eas Single Pulse Avalanche Energy Rating @ 700 mj Tes eee ctature Range ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-299Rugged Power MOSFETs IRFPSSOR, IRFP351R, IRFP352R, IRFP353R Electrical Characteristics @ T; = 25C (Uniess Otherwise Specified) P, Type_ Min. | Typ. | Max. | Units Test Conditions BVoss_ Drain - Source Breakdown Voltage | IRFP350R _ IRFP352R | 400 | = Vi | Vos = OV IRFP351R = IRFP353R 350 _ - v lo = 250A Vasim _Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Vas, lo = 2504 A loss Gate-Source Leakage Forward ALL = = 100 nA__| Vas = 20V less Gate-Source Leakage Reverse ALL = _ -100 nA Vas = -20V Joss Zero Gate Voltage Orain Current L _ = 250 HA Vos = Max. Rating, Ves = OV AU _ | 1000 | A | Vos = Max. Rating x 0.8, Vos = OV, Tc = 125C Into On-State Drain Current @ IRFP350R } 15 _ _ A IRFP351R Vos > Ipton X Reston max, Vas = 10V IRFP3S2R | 44 _ _ A IRFP353R Rosie Static Drain-Source On-State (RFP350R | __ 0.25 03 2 Resistance @ REPS f Ves = 10V, Ip =8.0A iRFP35aR| | OF | OF | 2 fs Forward Transconductance @ ALL 8.0 10 = S(U)_|_ Vos > Ipion X Rostonmas., !o = 8.0A a Cise input Capacitance ALL = 2000 _ pF Ves = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL _ 400 - pE See Fig. 10 om Reverse Transfer Capacitance ALL _ 100 = pF taton Turn-On Delay Time ALL _ = 35 ns Von = 180V, lo = 8.0A, Zo = 4.72 t Rise Time ALL = = 65 ns See Fig. 17 tao _ Turn-Off Delay Time ALL - = 150 ns (MOSFET switching times are essentially th Fall Time ALL _ _ 75 ns independent of operating temperature.) Qs Total Gate Charge ALL _ 79 120 nc Ves = 10V, lo = 18A, Vos = 0.8V Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Q Gate-Source Charge ALL _ 38 _ ac essentially independent of operating Qu Gate-Drain (Miller) Charge ALL 41 | no _| temperature.) Lo Internal Drain Inductance ALL 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device , source and gate pins inductances and center of die. Lo Ls internal Source Inductance ALL _ 12.5 _- nH Measured from the source pin, 6 mm Ls (0.25 in.) from header and source s bonding pad. pecs azees Thermal Resistance RuJG _ Junction-to-Case ALL = = 83 C/W. RCS Case-to-Sink ALL _ 0.1 = C/W _| Mounting surface flat, smooth, and greased. RiJA Junction-to-Ambient ALL _ = 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFP3SOR | __ _ 15 A Modified MOSFET symbol (Body Diode) IRFP351R, showing the integral (RFP352R 13 reverse P-N junction rectifier. IRFP353R | ~ A tsm Pulse Source Current IRFP3SOR | _ _ 60 A Ss (Body Diode) @ IRFP351R IRFP352R ech anes inFp35aR | | | 5 A Vso Diode Forward Voltage @ tRFP350R _ = - IRFP351R - 1.6 v Te = 25C, Is = 15A, Vas = OV IRFP352R = = = IRFP353R - - 15 v Te = 28C, Is = 13A, Ves = OV te Reverse Recovery Time ALL 1000 = ns Ty = 150C, te = 15A, dir/dt = 100A/us Qrr Reverse Recovered Charge ALL = 6.6 = uc Ty = 180C, Ir = 15A, dle/dt = 100A/us ton Forward Turn-on Time ALL intrinsic turn-on time is negligible. Turn-on speed is substantially contralied by Ls + Lo. @ Ts = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5). @ Von = 40V, starting Ts = 25C, L = 5.66MH, Res = 502, Ipesx = 15A. See figures 15, 16. 6-300Rugged Power MOSFETs ZenscltY/Ryyyc. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) IRFP350R, IRFP351R, IRFP352R, IRFP353R 20 BO us PULSE TEST 3 a Veg 2 5.5V = wi = < w z z < <n = Lad 2 z ao = z > < oS z z < 2 x a B 4 4.0v 3.5 0 50 100 150 200 280 300 Vps, ORAIN-TO-SQUACE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 100 Vgs = 10V 50 80 ws PULSE 5.0V 20 g g z a 10 = = = e = = c =z a = a? 2 z = z 4 = 10 a 3 s = 05 02 Ot 1 2 3 4 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics o Ss on o ~ 2 2 o a SINGLE PULSE (TRANSIENT THERMAL IMPEDANCE} > i<3 0.0 10-5 10-4 5 132 5 49-2 12 80 us PULSE Vos > !Dion) * Boston) max. Ty= +1250C Ty= 250C Ty -50C 2 3 4 5 6 Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics aR TION EA E BY Rosion} IRFP352R, 3A 1 us 100 ys IRFP350R, 1R 3R lms Te - 259C Ty= 150C MAX Renyc = 0.83 K'W SINGLE PULSE 3A Hut 1 an 10 5 10 20 50 100 200 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) 500 Fig. 4 Maximum Safe Operating Area pot} bo t2 1. DUTY FACTOR, D = 2. PER UNIT BASE = Ainje = 0.83 DEG. C/W. 3. Tym - Te = Pom Ztruclt). 2 5 19-1 5 1.0 2 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-301Rugged Power MOSFETs IRFP350R, IRFP351R ,IRFP352R, IRFP353R 20 Sts. TRANSCONDUCTANCE (SIEMENS) 4 Vos > 'pon) * Boston) max. 80 us PULSE TEST 0 4 8 12 16 20 Ip. DRAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 1.25 w (NORMALIZED) z eo ry a BVpgs, DRAIN-TO-SOUACE BREAKDOWN VOLTAGE 2 o o -40 0 40 a0 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature 4000 Ves=0 f= 1 MHz Cigg = Cog + Cog, Cas SHORTED Crxg = Cod Cys , Con "Ca? tee = Cag + Cog C, CAPACITANCE (pF) 0 10 20 Ky 4 50 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 6-302 Ss ~ wn ~~ Ty= 150C So tpg, REVERSE DRAIN CURRENT (AMPERES) wn ~ 0 1 2 3 4 Vso. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage 22 06 Rp$ (on). ORAIN 70-SQURCE ON RESISTANCE (NORMALIZED) 02 ~40 0 40 80 120 Ty. JUNCTION TEMPERATURE (C} Fig. 9 Normalized On-Resistance Vs. Temperature 20 Vos = 80V Vas = 200V t ( = 320V Vgs. GATE-TO-SQUACE VOLTAGE (VOLTS) 6 Ip = 184 FOR TEST CIRCUIT FIGURE 18 a 28 56 4 W2 140 Qy, TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage07 Ves 2 10V |; 06 Vgs* 20V _ . ZL yr 03 Ros(on) MEASURED WITH CURRENT PULSE OF 2.0. us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE 1S MINIMAL.) Q 10 20 30 40 50 60 70 Ip. ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current N\ 140 N Rpsion). ORAIN-TO-SQURCE ON RESISTANCE (OHMS) \ \ 3 3 y = 2 y 4 o Pp, POWER DISSIPATION (WATTS) Y \ \ i) o 0 20 40 60 80 100 120 140 Tc, CASE TEMPERATURE (C) F g. 14 Power Vs. Temperature Derating Curve Von ADJUST Ry TO OBTAIN p, SPECIFIEO tp Vos VGs Touse k OUT PULSE | GENERATOR 1092 SOURCE | IMPEQANCE L__fJ _ Fig. 17 Switching Time Test Circuit Rugged Power MOSFETs IRFP350R, IRFP351R , IRFP352R, IRFP353R 20 Ip, QRAIN CURRENT (AMPERES) 0 26 50 75 100 125 160 Tc, CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK i VggttOV i Fie] 92CS- 42659 Fig. 15 Unclamped Energy Test Circuit 92CS- 42660 Fig. 16 Unclamped Energy Waveforms *VYos USOLATED SUPPLY) CURRENT REGULATOR SAME TYPE 12Vv BATTERY | 15mA 0 ee CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 18 Gate Charge Test Circuit 6-303