infrared emitting diodes Features 880 nm * Nine standard packages in hermetic and low-cost epoxy * End- and side-radiating packages * Graded output * High efficiency GaAIAs, 880 nm LPE process delivers twice the power of conventional GaAs 940 nm emitters Features 940 nm * Three standard packages in hermetic and low-cost epoxy * End-radiating packages * High power GaAs, 940 nm LPE process Features 770 nm, 870 nm, 950 nm * Multiple SMD-packages on ceramic substrate * High thermal conductivity * Superior light uniformity * Wide viewing angle * End-to-end and side-to-side stackable Typical Applications * Computer/business equipment * Write-protect control * Margin controls--printers * Industrial * LED light source--light pens * Security systems * Safety shields * Consumer * Coin counters * Lottery card readers * Position sensors--joysticks * Remote controllers--toys, appliances, audio/visual equipment * Games--laser tag * Camera shutter control Description Light Emitting Diodes (LEDs) are solid-state P-N junction devices that emit light when forward biased. An IRED is an Infrared Emitting Diode, a term specifically applied to PerkinElmer IR emitters. Unlike incandescent lamps, which emit light over a very broad range of wavelengths, LEDs emit light over such a narrow bandwidth that they appear to be emitting a single "color". Their small size, long operating lifetimes, low power consumption, compatibility with solid-state drive circuitry, and relatively low cost make LEDs the preferred light source in many applications. Principle of Operation Because they emit at wavelengths which provide a close match to the peak spectral response of silicon photodetectors, both GaAs and GaAIAs IREDs are often used with phototransistors. All infrared emitting diodes are RoHS compliant. Datasheets available upon request. 36 www.optoelectronics.perkinelmer.com LEDs are made from a wide range of semiconductor materials. The emitted peak wavelength depends on the semiconductor material chosen and how it is processed. LEDs can be made that emit in the visible or near-infrared part of the spectrum. The P-N junction is formed by doping one region of the material with donor atoms and the adjacent region with acceptor atoms. Like all P-N junction devices, LEDs exhibit the familiar diode current-voltage characteristics. LEDs emit light only when they are biased in the forward direction. Under forward-biased conditions, carriers are given enough energy to overcome the potential barrier existing at the junction. After crossing the junction, these carriers will recombine. A percentage of the carriers will recombine by a radiative process in which the hole-electron recombination energy is released as a photon of light. The remaining carriers recombine by a non-radiative process and give up their energy in the form of heat. The amount of light generated, or power output of the LED, varies almost linearly with forward current. Doubling the forward current approximately doubles the power output. 880 nm IREDs This series of infrared emitting diodes (IREDs) consists of three standard chips in nine different packages that provide a broad range of mounting, lens and power-output options. 940 nm IREDs This series of infrared emitting diodes (IREDs) consists of two standard chips in three different packages. Infrared Emitting Diodes VTE 880 nm Series Technical Specification Part Number Infrared Emitting Diodes-- VTE Formats 880 nm and 940 nm GaAlAs Infrared Emitting Diodes TO-46 Flat Window Package VTE1063 TO-46 Lensed Package VTE1163 T- 1 3/4 (5 mm) Plastic Package VTE1261 VTE1281F VTE1291-2 VTE1262 VTE1281W-1 VTE1291W-1 VTE1281-1 VTE1281W-2 VTE1291W-2 VTE1281-2 VTE1291-1 T- 1 3/4 (5 mm) Bullet Package VTE1285 VTE1295 Coax Hermetic (with case lead) VTE3175L VTE3176L Long T-1 (3 mm) Plastic Package VTE3372LA VTE3374LA Molded Lateral Package VTE7173 VTE7172 GaAs Infrared Emitting Diodes TO-46 Flat Window Package VTE1013 TO-46 Lensed Package VTE1113 Long T-1 Plastic Package VTE3322LA VTE3324LA Output Irradiance E e Irradiance Cond . Radiant Total Test Current 2 Distance Diameter Intensity I e Power I FT mA mW/cm min. typ. mm mm mW/sr min. PO mW typ. Pulsed Forward Drop VF @ IFT volts typ. max. Half Power Beam Angle 1/2 typ. VTE1063H 3.8 5 36 6.4 49 80 1000 2.8 3.5 VTE1163H 22 28 36 6.4 285 110 1000 2.8 3.5 10 VTE1261H 3 3.9 36 6.4 39 20 100 1.5 2 10 VTE1262H 4 5.2 36 6.4 52 25 100 1.5 2 10 VTE1281-1H 2.5 3.3 36 6.4 32 20 100 1.5 2 10 10 35 VTE1281-2H 5 6.5 36 6.4 65 25 100 1.5 2 VTE1281FH 0.16 0.21 36 6.4 2.1 20 100 1.5 2 45 VTE1281W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 25 VTE1281W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 25 VTE1285H 3 5.5 36 6.4 39 20 100 1.5 2 8 VTE1291-1H 2.5 3.3 36 6.4 32 20 100 1.5 2 12 VTE1291-2H 5 6.5 36 6.4 65 25 100 1.5 2 12 VTE1291W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 25 VTE1291W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 25 VTE1295H 3 5.5 36 6.4 39 20 100 1.5 2 8 VTE3175LH 0.65 -- 13.6 5.1 1.2 -- 20 1.3 1.8 10 VTE3176LH 1.65 -- 13.6 5.1 3.1 -- 20 1.3 1.8 10 VTE3372LAH 2 2.6 10.16 2.1 2 3 20 1.3 1.8 10 10 VTE3374LAH 4 5.2 10.16 2.1 4.1 5 20 1.3 1.8 VTE7172H 0.4 0.6 16.7 4.6 1.1 2.5 20 1.3 1.8 25 VTE7173H 0.6 0.8 16.7 4.6 1.7 5 20 1.3 1.8 25 Electro-Optical Characteristics @ 25C VTE 940 nm Series Technical Specification Part Number Output Radiant Total Test Current Irradiance E e Irradiance Cond . 2 mW/cm I FT mA Distance Diameter Intensity I e Power min. typ. mm mm mW/sr min. PO mW typ. Pulsed Forward Drop VF @ IFT volts typ. max. Half Power Beam Angle 1/2 typ. VTE1013H 2.1 2.7 36 6.4 27 30 1000 1.9 2.5 35 VTE1113H 12 15 36 6.4 156 30 1000 1.9 2.5 10 VTE3322LAH 1 1.3 10.16 2.1 1 1.5 20 1.25 1.6 10 VTE3324LAH 2 2.6 10.16 2.1 2 2.5 20 1.25 1.6 10 Electro-Optical Characteristics @ 25C I Technical Specification CR50IRDA * Surface mounting device e Part Number Package* Peak Wavelength Radiant Flux CR10IRD Ceramic SMD (A1) 770 6.3 2.4 40/30 1.75 1.6 75 Anode CR10IRDA Ceramic SMD (A1) 870 20 8.2 30/15 1.5 1.4 75 Anode CR10IRH Ceramic SMD (A1) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode CR10IRK Ceramic SMD (A1) 950 11.4 4.4 500/500 1.35 1.2 80 Anode 50 mA 20 mA Rise/Fall Time tr/tf (ns) Forward Voltage VF 50 mA 20 mA Forward Current Orientation IF CR50IRD Ceramic SMD (A2) 770 6.3 2.4 40/30 1.75 1.6 75 Anode CR50IRDA Ceramic SMD (A2) 870 20 8.2 30/15 1.5 1.4 75 Cathode CR50IRH Ceramic SMD (A2) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode CR50IRK Ceramic SMD (A2) 950 11.4 4.4 500/500 1.35 1.2 80 Cathode * All packages are listed on our website. www.optoelectronics.perkinelmer.com 37