36 www.optoelectronics.perkinelmer.com
Description
Light Emitting Diodes (LEDs) are solid-state P-N junction
devices that emit light when forward biased. An IRED is an
Infrared Emitting Diode, a term specifically applied to
PerkinElmer IR emitters. Unlike incandescent lamps, which emit
light over a very broad range of wavelengths, LEDs emit light
over such a narrow bandwidth that they appear to be emitting
a single “color”. Their small size, long operating lifetimes, low
power consumption, compatibility with solid-state drive
circuitry, and relatively low cost make LEDs the preferred light
source in many applications.
LEDs are made from a wide range of semiconductor materials.
The emitted peak wavelength depends on the semiconductor
material chosen and how it is processed. LEDs can be made that
emit in the visible or near-infrared part of the spectrum.
The P-N junction is formed by doping one region of the material
with donor atoms and the adjacent region with acceptor atoms.
Like all P-N junction devices, LEDs exhibit the familiar diode
current-voltage characteristics. LEDs emit light only when they
are biased in the forward direction. Under forward-biased
conditions, carriers are given enough energy to overcome the
potential barrier existing at the junction. After crossing the junction,
these carriers will recombine. A percentage of the carriers will
recombine by a radiative process in which the hole-electron
recombination energy is released as a photon of light. The
remaining carriers recombine by a non-radiative process and give
up their energy in the form of heat. The amount of light generated,
or power output of the LED, varies almost linearly with forward
current. Doubling the forward current approximately doubles
the power output.
880 nm IREDs
This series of infrared emitting diodes (IREDs) consists of three
standard chips in nine different packages that provide a broad
range of mounting, lens and power-output options.
940 nm IREDs
This series of infrared emitting diodes (IREDs) consists of two
standard chips in three different packages.
All infrared emitting diodes are RoHS compliant.
infrared emitting diodes
Features 880 nm
• Nine standard packages in
hermetic and low-cost epoxy
• End- and side-radiating packages
• Graded output
• High efficiency GaAIAs, 880 nm
LPE process delivers twice the
power of conventional GaAs
940 nm emitters
Features 940 nm
• Three standard packages in
hermetic and low-cost epoxy
• End-radiating packages
• High power GaAs, 940 nm
LPE process
Features 770 nm, 870 nm, 950 nm
• Multiple SMD-packages
on ceramic substrate
• High thermal conductivity
• Superior light uniformity
• Wide viewing angle
• End-to-end and side-to-side
stackable
Typical Applications
• Computer/business equipment
• Write-protect control
• Margin controls—printers
• Industrial
• LED light source—light pens
• Security systems
• Safety shields
• Consumer
• Coin counters
• Lottery card readers
• Position sensors—joysticks
• Remote controllers—toys,
appliances, audio/visual
equipment
• Games—laser tag
• Camera shutter control
Principle of Operation
Because they emit at wavelengths
which provide a close match to the
peak spectral response of silicon
photodetectors, both GaAs and
GaAIAs IREDs are often used with
phototransistors.
Datasheets available upon request.
Infrared Emitting Diodes—
VTE Formats 880 nm and 940 nm
CR50IRDA
• Surface mounting device www.optoelectronics.perkinelmer.com 37
Infrared Emitting Diodes
Output Forward Drop
Irradiance EeIrradiance Cond.Radiant Total Test Current VF@ IFTHalf Power
Part mW/cm2Distance Diameter Intensity Ie Power IFT mA volts Beam Angle
Number min. typ. mm mm mW/sr min. POmW typ. Pulsed typ. max. θ1/2 typ.
VTE1063H 3.8 5 36 6.4 49 80 1000 2.8 3.5 ±35˚
VTE1163H 22 28 36 6.4 285 110 1000 2.8 3.5 ±10˚
VTE1261H 33.9 36 6.4 39 20 100 1.5 2 ±10˚
VTE1262H 45.2 36 6.4 52 25 100 1.5 2 ±10˚
VTE1281-1H 2.5 3.3 36 6.4 32 20 100 1.5 2 ±10˚
VTE1281-2H 56.5 36 6.4 65 25 100 1.5 2 ±10˚
VTE1281FH 0.16 0.21 36 6.4 2.1 20 100 1.5 2 ±45˚
VTE1281W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 ±25˚
VTE1281W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 ±25˚
VTE1285H 35.5 36 6.4 39 20 100 1.5 2 ±8˚
VTE1291-1H 2.5 3.3 366.4 32 20 100 1.5 2 ±12˚
VTE1291-2H 56.5 36 6.4 65 25 100 1.5 2 ±12˚
VTE1291W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 ±25˚
VTE1291W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 ±25˚
VTE1295H 3 5.5 36 6.4 39 20 100 1.5 2 ±8˚
VTE3175LH 0.65 — 13.6 5.1 1.2 — 20 1.3 1.8 ±10˚
VTE3176LH 1.65 — 13.6 5.1 3.1 — 20 1.3 1.8 ±10˚
VTE3372LAH 2 2.6 10.16 2.1 2 3 20 1.3 1.8 ±10˚
VTE3374LAH 4 5.2 10.16 2.1 4.1 5 20 1.3 1.8 ±10˚
VTE7172H 0.4 0.6 16.7 4.6 1.1 2.5 20 1.3 1.8 ±25˚
VTE7173H 0.6 0.8 16.7 4.6 1.7 5 20 1.3 1.8 ±25˚
VTE 880 nm Series
Technical Specification
Output Forward Drop
Irradiance EeIrradiance Cond.Radiant Total Test Current VF@ IFT Half Power
Part mW/cm2Distance Diameter Intensity Ie Power IFT mA volts Beam Angle
Number min. typ. mm mm mW/sr min. POmW typ. Pulsed typ. max. θ1/2 typ.
VTE1013H 2.1 2.7 36 6.4 27 30 1000 1.9 2.5 ±35˚
VTE1113H 12 15 36 6.4 156 30 1000 1.9 2.5 ±10˚
VTE3322LAH 1 1.3 10.16 2.1 1 1.5 20 1.25 1.6 ±10˚
VTE3324LAH 22.6 10.16 2.1 2 2.5 20 1.25 1.6 ±10˚
VTE 940 nm Series
Technical Specification
Electro-Optical Characteristics @ 25°C
Electro-Optical Characteristics @ 25°C
GaAlAs Infrared Emitting Diodes
TO-46 Flat Window Package
VTE1063
TO-46 Lensed Package
VTE1163
T- 1 3/4 (5 mm) Plastic Package
VTE1261 VTE1281F VTE1291-2
VTE1262 VTE1281W-1 VTE1291W-1
VTE1281-1 VTE1281W-2 VTE1291W-2
VTE1281-2 VTE1291-1
T- 1 3/4 (5 mm) Bullet Package
VTE1285 VTE1295
Coax Hermetic (with case lead)
VTE3175L VTE3176L
Long T-1 (3 mm) Plastic Package
VTE3372LA VTE3374LA
Molded Lateral Package
VTE7172 VTE7173
GaAs Infrared Emitting Diodes
TO-46 Flat Window Package
VTE1013
TO-46 Lensed Package
VTE1113
Long T-1 Plastic Package
VTE3322LA VTE3324LA
Peak Radiant Flux Rise/Fall Forward Forward
Part Wave- φ
φeTime Voltage VF Current
Number Package* length 50 mA 20 mA tr/tf (ns) 50 mA 20 mA IF Orientation
CR10IRD Ceramic SMD (A1) 770 6.3 2.4 40/30 1.75 1.6 75 Anode
CR10IRDA Ceramic SMD (A1) 870 20 8.2 30/15 1.5 1.4 75 Anode
CR10IRH Ceramic SMD (A1) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode
CR10IRK Ceramic SMD (A1) 950 11.4 4.4 500/500 1.35 1.2 80 Anode
CR50IRD Ceramic SMD (A2) 770 6.3 2.4 40/30 1.75 1.6 75 Anode
CR50IRDA Ceramic SMD (A2) 870 20 8.2 30/15 1.5 1.4 75 Cathode
CR50IRH Ceramic SMD (A2) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode
CR50IRK Ceramic SMD (A2) 950 11.4 4.4 500/500 1.35 1.2 80 Cathode
I
Technical Specification
* All packages are listed on our website.
