2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. * High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 * High DC Current Gain - hFE = 30 - 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max) * Pb-Free Packages are Available IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIII IIIIIIIIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII http://onsemi.com 25 AMPERE POWER TRANSISTORS NPN SILICON *MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol 2N6338 2N6341 Unit VCB 120 180 Vdc VCEO 100 150 Vdc VEB Collector Current Continuous Peak 6.0 IC Base Current IB Total Device Dissipation @ TC = 25_C Derate above 25_C PD Operating and Storage Junction Temperature Range TJ, Tstg TO-204AA CASE 1-07 Vdc Adc 25 50 10 Adc 200 1.14 W W/C - 65 to + 200 _C ORDERING INFORMATION Device Package Shipping 2N6338 TO-204AA 100 Units / Tray 2N6338G TO-204AA (Pb-Free) 100 Units / Tray 2N6341 TO-204AA 100 Units / Tray 2N6341G TO-204AA (Pb-Free) 100 Units / Tray THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit JC 0.875 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 12 1 Publication Order Number: 2N6338/D 2N6338, 2N6341 PD, POWER DISSIPATION (WATTS) 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 150 - - Vdc - - 50 50 - - 10 1.0 Adc mAdc OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) 2N6338 2N6341 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) 2N6338 2N6341 ICEO Adc Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO - 10 Adc Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO - 100 Adc 50 30 12 - 120 - - - 1.0 1.8 - - 1.8 2.5 ON CHARACTERISTICS (1) DC Current Gain) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) hFE - Collector Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) Base-Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc) VBE(on) - 1.8 Vdc fT 40 - MHz Cob - 300 pF Rise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) tr - 0.3 s Storage Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) ts - 1.0 s Fall Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) tf - 0.25 s Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. (2) fT = |hfe| * ftest. http://onsemi.com 2 2N6338, 2N6341 1000 700 VCC + 80 V RB 10 OHMS SCOPE 0 1N4933 - 9.0 V tr, tf v 10 ns DUTY CYCLE = 1.0% td @ VBE(off) = 6.0 V 300 t, TIME (ns) 10 s + 11 V 200 tr 100 70 50 30 - 5.0 V 20 NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. 10 0.3 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 VCC = 80 V IC/IB = 10 TJ = 25C 500 RC 8.0 OHMS 20 30 Figure 3. Turn-On Time 0.2 0.1 0.1 P(pk) JC = r(t) JC JC = 0.875C/W MAX 0.05 0.07 0.05 0.02 t1 0.01 0.03 0.02 t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 DUTY CYCLE, D = t1/t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 100 50 200 s 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 2.0 1.0 ms dc 5.0 ms TJ = 200C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 5.0 7.0 10 20 30 2N6338 2N6341 50 70 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area http://onsemi.com 3 2N6338, 2N6341 5.0 ts t, TIME (s) 1.0 VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C 3000 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) 20 1000 700 500 300 200 100 70 50 0.1 30 TJ = 25C Cib 2000 C, CAPACITANCE (pF) 3.0 2.0 5000 Figure 6. Turn-Off Time Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 100 2N6338, 2N6341 PACKAGE DIMENSIONS TO-204AA (TO-3 CASE 1-07 ISSUE Z A N C E D -T- U SEATING PLANE K 2 PL 0.13 (0.005) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L 2 H G B M T Y 1 -Q- 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6338/D