BT100-6 Sensitive Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current (IT(RMS)=0.8 A) Low On-State Voltage (1.2V(Typ.)@ITM) General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings (TJ=25 unless otherwise specified) Symbol Parameter Condition Ratings Units 400 V VDRM Repetitive Peak Off-state Voltage IT(AV) Average On-State Current Half Sine Wave : TC =74 0.5 A IT(RMS) R.M.S On-State Current All Conduction Angle 0.8 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave NonRepetitive 10 A I2 t It for Fusing t = 8.3ms 0.415 A S PGM Forward Peak Gate Power Dissipation 2 W 0.1 W PG(AV) Forward Average Gate Power Dissipation IFGM Forward Peak Gate Current 1 A VRGM Reverse Peak Gate Voltage 5.0 V TJ TSTG Operating Junction Temperature -40 ~ 125 Storage Temperature -40 ~ 150 1 BT100-6 Electrical Characteristics Ratings Symbol Items Conditions VAK=VDRM, IDRM Repetitive Peak OffState Current VTM Peak On-State Voltage(1) IGT Gate Trigger Current(2) VGT Gate Trigger Voltage(2) VGD Non-Trigger Gate Voltage(1) Unit or VRRM:RGK=1000 Tc=25 Tc=125 (ITM=1A, Peak) Min Typ Max 10 200 1.7 V 1.2 VAK=6V, RL=100 Tc=25 Tc=-40 200 500 Tc=25 Tc=-40 0.8 1.2 V VD=7V, RL=100 VAK=12V, RL=100 Tc=125 0.2 V 500 800 V/ 50 A/ 5.0 10 mA VD=Rated VDRM, Exponential waveform RGK=1000 TJ=125 dv/dt Critical Rate of Rise Off-State Voltage di/dt Critical Rate of Rise Off-State Voltage IPK=20A ; lgt=20mA Holding Current VAK=12V, Gate Open Initiating Current=20mA Tc=25 Tc=-40 Rth(j-c) Thermal Impedance Junction to case 60 /W Rth(j-a) Thermal Impedance Junction to Ambient 150 /W IH PW=10;diG/dt=1A/ 2 Notes : 1. Pulse Width 1.0ms, Duty cycle 1% 2. Does not include RGK in measurement. 2 BT100-6 3 BT100-6 4 BT100-6 * TO-92 5