TSDP341.., TSDP343..
www.vishay.com Vishay Semiconductors
Rev. 1.2, 10-Apr-18 1Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IR Receiver Modules for Data Transmission
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Pinning for TSDP341.., TSDP343..:
1 = OUT, 2 = GND, 3 = VS
FEATURES
• Very low supply current
• Continuous data rates up to 7777 bps
• Range up to 32 m
• Photo detector and preamplifier in one package
• Internal filter tuned to 38.4 kHz for 4800 bps or
57.6 kHz for 9600 bps
• Shielding against EMI
• Supply voltage: 2.5 V to 5.5 V
• Immunity against ambient light
• Insensitive to supply voltage ripple and noise
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
These products are miniaturized receivers for low speed
infrared data transmission. A PIN diode and a preamplifier
are assembled on a lead frame, the epoxy package contains
an IR filter.
The demodulated output can be directly connected to a
UART or a microprocessor. The TSDP34138 may be used
for continuous reception of data according to RS-232 at
4800 bps in noise free environments. Higher data rate
RS-232 may require data monitoring of gain levels. Non
RS-232 codings may be used to achieve continuous
average data rates up to 7800 bps in noisy ambients.
This component has not been qualified according to
automotive specifications.
BLOCK DIAGRAM APPLICATION CIRCUIT
16672
1
2
3
click logo to get started
Available
Models
PARTS TABLE
AGC LOW NOISE ENVIRONMENTS (AGC1) NOISY ENVIRONMENTS (AGC3)
Carrier
frequency
38.4 kHz TSDP34138 TSDP34338
57.6 kHz TSDP34156 TSDP34356
Package Mold
Pinning 1 = OUT, 2 = GND, 3 = VS1 = OUT, 2 = GND, 3 = VS
Dimensions (mm) 6.0 W x 6.95 H x 5.6 D
Mounting Leaded
Application Data transmission
30 kΩ
2
3
1
Demo-
pass
AGCInput
PIN
Band
dulator
Control circuit
16833-13
C1
IR receiver
GND
Circuit
μC
R1
+ VS
GND
Transmitter
with
TSALxxxx VS
VO
17170-11
OUT
R1 and C1 recommended to reduce supply ripple for VS < 2.8 V
TSDP341.., TSDP343..
www.vishay.com Vishay Semiconductors
Rev. 1.2, 10-Apr-18 2Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Output Active Low Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Supply voltage VS-0.3 to +6 V
Supply current IS3mA
Output voltage VO-0.3 to (VS + 0.3) V
Output current IO5mA
Junction temperature Tj100 °C
Storage temperature range Tstg -25 to +85 °C
Operating temperature range Tamb -25 to +85 °C
Power consumption Tamb ≤ 85 °C Ptot 10 mW
Soldering temperature t ≤ 10 s, 1 mm from case Tsd 260 °C
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Supply current Ev = 0, VS = 3.3 V ISD 0.27 0.35 0.45 mA
Ev = 40 klx, sunlight ISH -0.45- mA
Supply voltage VS2.5 - 5.5 V
Transmission distance
Ev = 0, test signal see Fig. 1,
IR diode TSAL6200,
IF = 150 mA
d-35-m
Output voltage low IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see Fig. 1 VOSL - - 100 mV
Minimum irradiance
Pulse width tolerance:
tpi - 1/f0 < tpo < tpi + 4/f0,
test signal see Fig. 1
Ee min. - 0.15 0.30 mW/m2
Maximum irradiance tpi - 1/f0 < tpo < tpi + 4/f0,
test signal see Fig. 1 Ee max. 30 - - W/m2
Maximum pulse width Ee min. > 10 mW/m2, tpi = 8/f0tpo max. - - 11.5/f0s
Directivity Angle of half transmission
distance ϕ1/2 -± 45- deg
Ee
T
tpi *) t
VO
VOH
VOL tpo 2) t
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, N = 6 pulses, f = f0, t = 10 ms)
Output Signal
td 1)
1) 3/f0 < td < 9/f0
2) tpi - 1/f0 < tpo < tpi + 4/f0
*) tpi ≥ 6/f0 is recommended for optimal function
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.1 10 1000 100 000
t
po
-Output Pulse Width (ms)
E
e
- Irradiance (mW/m
2
)
Output pulse width
Input burst length
Optical test signal, λ= 940 nm,
f = 38 kHz, N = 8 carrier cycles
TSDP341.., TSDP343..
www.vishay.com Vishay Semiconductors
Rev. 1.2, 10-Apr-18 3Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Output Function
Fig. 4 - Output Pulse Diagram
Fig. 5 - Frequency Dependence of Responsivity
Fig. 6 - Sensitivity in Bright Ambient
Fig. 7 - Sensitivity vs. Supply Voltage Disturbances
Fig. 8 - Maximum Envelope Duty Cycle vs. Burst Length
Ee
t
VO
VOH
VOL t
210 µs 210 µs
t = 60 ms
ton toff
Optical Test Signal
Output Signal, (see fig. 4)
0
0.1
0.2
0.3
0.4
0.1 10 1000 100 000
ton, toff -Output Pulse Width (ms)
Ee- Irradiance (mW/m2)
ton
toff
λ= 940 nm, f = 38 kHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7 0.9 1.1 1.3
f/f0- Relative Frequency
16926
f (3 dB) = f0/7
Ee min./Ee - Rel. Responsivity
f = f0 ± 5 %
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.1 1 10 100
Ee min. -Threshold Irradiance (mW/m2)
Ee- Ambient DC Irradiance (W/m2)
Wavelength of ambient
illumination: λ= 950 nm
Correlation with
ambient light sources:
10 W/m2= 1.4 klx
(Std. ilum. A, T = 2855 K)
10 W/m2= 8.2 klx
(Daylight, T = 5900 K)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1 10 100 1000
Ee min. -Threshold Irradiance (mW/m2)
ΔVSRMS- AC Voltage on DC Supply Voltage (mV)
f = f0
f = 30 kHz
f = 10 kHz
f = 100 Hz
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 20 40 60 80 100 120
Burst Length (Number of Cycles/Burst)
Max. Envelope Duty Cycle
f = 38 kHz,
E
e
= 2 mW/m²
TSDP343..
TSDP341..
TSDP341.., TSDP343..
www.vishay.com Vishay Semiconductors
Rev. 1.2, 10-Apr-18 4Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Sensitivity vs. Ambient Temperature
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Fig. 11 - Horizontal Directivity
Fig. 12 - Sensitivity vs. Supply Voltage
0
0.05
0.10
0.15
0.20
0.25
0.30
-30 -10 10 30 50 70 90
Ee min. -Threshold Irradiance (mW/m2)
Tamb - Ambient Temperature (°C)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
750 800 850 900 950 1000 1050 1100 1150
21425 λ- Wavelength (nm)
S (λ) rel - Relative Spectral Sensitivity
96 12223p2
0.4 0.2 00.6
0.9
0°
30°
10° 20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
d
rel
- Relative Transmission Distance
0
0.05
0.10
0.15
0.20
0.25
0.30
123456
Ee min. -Sensitivity (mW/m2)
VS-Supply Voltage (V)
TSDP341.., TSDP343..
www.vishay.com Vishay Semiconductors
Rev. 1.2, 10-Apr-18 5Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUITABLE DATA FORMAT
Theses receivers are designed to suppress spurious output
pulses due to noise or optical disturbances. The devices can
distinguish data signals from noise due to differences in
frequency, burst length, and envelope duty cycle. For
optimum sensitivity, the data’s modulation frequency
should be close to the device’s band-pass center frequency
(e.g. 38.4 kHz) and fulfill the conditions in the table below.
When a data signal is applied to the receiver in the presence
of noise, the sensitivity of the receiver is automatically
reduced by the AGC to insure that no spurious pulses are
present at the receiver’s output. Some examples of noise
which is suppressed:
• DC light (e.g. from tungsten bulbs sunlight)
• Continuous signals at any frequency
• Strongly or weakly modulated patterns from fluorescent
lamps with electronic ballasts (see Fig. 13 or Fig. 14).
Fig. 13 - IR Disturbance from Fluorescent Lamp
With Low Modulation
Fig. 14 - IR Disturbance from Fluorescent Lamp
With High Modulation
16920
10
100
1000
10000
0
1
2
3
4
5
6
7
0 5 10 15 20
Axis Title
1st line
2nd line
2nd line
IR Signal Amplitude
Time (ms)
16921
10
100
1000
10000
-60
-40
-20
0
20
40
0 5 10 15 20
Axis Title
1st line
2nd line
2nd line
IR Signal Amplitude
Time (ms)
TSDP341.. TSDP343..
Minimum burst length 6 cycles/burst 6 cycles/burst
After each burst of length
A gap time is required of
6 to 70 cycles
≥ 7 cycles
6 to 35 cycles
≥ 7 cycles
For bursts greater than
a minimum gap time in the data stream is needed of
70 cycles
> 1.2 x burst length
35 cycles
> 6 x burst length
Maximum number of continuous short bursts/second 3000 3000
Suppression of interference from fluorescent lamps Mildly modulated noise patterns
are suppressed (Fig. 13)
Strongly modulated noise patterns
are suppressed (Fig. 14)
TSDP341.., TSDP343..
www.vishay.com Vishay Semiconductors
Rev. 1.2, 10-Apr-18 6Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Not indicated tolerances ± 0.2
Drawing-No.: 6.550-5169.01-4
Issue: 9; 03.11.10
13655
specications
according to DIN
technical drawings
3.9
0.5 max.
1.3
4.1
6
0.85 max.
0.89
1
1
8.25
(5.55)
6.95
5.3
30.5 ± 0.5
2.54 nom.
2.54 nom.
0.7 max.
5.6
marking area
R 2.5
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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