Publication Date : Oct．2011
1
OUTLINE DRAWING
0.2+/-0.05
0.2+/-0.05
0.9+/-0.1
INDEX MARK
(Gate)
6.0+/-0.15
4.9+/-0.15
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1.0+/-0.05
(0.25)
2
3
1
3.5+/-0.05
2.0+/-0.05
(0.25)
(0.22) (0.22)
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
2
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 21.9 W
Pin Input Power Zg=Zl=500.1 W
ID Drain Current - 1.5 A
Tch Junction temperature - 150 °C
Tstg Storage temperature - -40 to +125 °C
Rth j-c Thermal resistance Junction to case 5.7 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS
MIN TYP MAX.
IDSS Drain cutoff current VDS=17V, VGS=0V - - 100 uA
IGSS Gate cutoff current VGS=10V, VDS=0V - - 1 uA
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V
Pout1 Output power 2 3 - W
D1 Drain efficiency
VDD=7.2V, Pin=50mW,
f=175MHz Idq=200mA 55 65 - %
Pout2 Output power 2 3 - W
D2 Drain efficiency
VDD=7.2V, Pin=50mW,
f=520MHz Idq=200mA 50 65 - %
Load VSWR tolerance
VDD=9.2V,Po=2W(Pin Control)
f=175MHz,Idq=200mA,Zg=50
Load VSWR=20:1(All Phase)
No destroy -
Load VSWR tolerance
VDD=9.2V,Po=2W(Pin Control)
f=520MHz,Idq=200mA,Zg=50
Load VSWR=20:1(All Phase)
No destroy -
Note: Above parameters, ratings, limits and conditions are subject to change.
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
3
TYPICAL CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
0
10
20
30
40
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
10
20
30
40
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
0
1
2
3
4
5
6
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vgs-Ids CHARACTERISTICS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
012345
Vgs(V)
Ids(A),GM(S)
Ta=+25°C
Vds=7.2V
Ids
GM
Vds-Ids CHARACTERISTICS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 2 4 6 8 10
Vds(V)
Ids(A)
Ta=+25°C Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=4V
Vgs=3V
Vgs=10V
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
0
5
10
15
20
25
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
CHANNEL DISSIPATION Pch(W)
...
On PCB (*1)
with through hole
and Heat-sink
On heat-sink
*1:The material of the PCB
Glass epoxy (t=0.8 mm)
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
4
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
0
5
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
20
30
40
50
60
70
80
90
100
ηd(%)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Po
ηｄ
Gp
Pin-Po CHARACTERISTICS
@f=175MHz
0.0
1.0
2.0
3.0
4.0
0 20 40 60 80 100
Pin(mW)
Pout(W) , Idd(A)
20
40
60
80
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Pin-Po CHARACTERISTICS
@f=520MHz
0
5
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
20
30
40
50
60
70
80
90
100
ηd(%)
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Po
ηｄ
Gp
Pin-Po CHARACTERISTICS
@f=520MHz
0.0
1.0
2.0
3.0
4.0
0 20 40 60 80 100
Pin(mW)
Pout(W) , Idd(A)
20
40
60
80
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Vdd-Po CHARACTERISTICS
@f=175MHz
0
1
2
3
4
5
6
7
3 5 7 9 11 13
Vdd(V)
Po(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Idd(A)
Po
Idd
Ta=25°C
f=175MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Vdd-Po CHARACTERISTICS
@f=520MHz
0
1
2
3
4
5
6
7
3 5 7 9 11 13
Vdd(V)
Po(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Idd(A)
Po
Idd
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
5
TEST CIRCUIT(f=175MHz)
5mm
62pF
L1
39pF
RF-in
L2
3mm
10pF
10pF
4.7K ohm
C1
240pF
C2 10μF,50V
43pF
13.5mm
3.3mm 6.5mm
19mm
12mm 3mm
680 ohm
3mm 11.5mm
L3
5mm
15mm
12mm 5mm
62pF
RF-OUT
Vgg Vdd
RD02MUS1B
175MHz
L1:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D
L2:Enameled wire 3 Turns,D:0.43mm,2.46mmm O.D
L3:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
TEST CIRCUIT(f=520MHz)
62pF 6pF
RF-in
26.5m
m
4.7K ohm
C1
240pF
C2 10μF,50V
18pF
20mm
19mm
10mm 3mm
680 ohm
11mm
L1
4.5m
m
19mm
40.5mm
62pF
RF-OUT
Vgg Vdd
RD02MUS1B
520MHz
L1:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
43pF
2mm
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
6
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin*
175MHz Zout*
175MHz Zin* Zout*
Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=11.61+j17.88
Zout*=6.83+j5.21
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin* Zout*
Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=1.20+j5.47
Zout*=5.56+j1.31
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin*
520MHz Zout*
output impedance
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
7
Freq.
[MHz]
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
100
0.847
-132.5
16.923
100.2
0.042
8.9
0.621
-118.8
135
0.828
-144.6
12.806
90.7
0.042
-0.1
0.598
-130.5
150
0.824
-148.1
11.555
87.5
0.042
-3.3
0.591
-133.7
175
0.817
-152.8
9.864
82.8
0.042
-7.6
0.590
-138.0
200
0.816
-156.2
8.579
78.6
0.041
-11.2
0.594
-141.2
250
0.816
-161.2
6.712
71.2
0.039
-17.6
0.609
-145.5
300
0.820
-164.9
5.436
64.9
0.038
-23.0
0.628
-148.8
350
0.827
-167.6
4.501
59.3
0.036
-28.2
0.653
-151.2
400
0.835
-169.9
3.813
54.0
0.034
-32.2
0.675
-153.5
450
0.844
-171.9
3.257
49.3
0.032
-36.5
0.699
-155.8
500
0.854
-173.6
2.823
44.9
0.031
-39.8
0.723
-157.7
520
0.858
-174.3
2.668
43.1
0.030
-41.1
0.732
-158.4
527
0.859
-174.7
2.613
42.6
0.030
-41.9
0.735
-158.6
550
0.862
-175.3
2.458
40.9
0.029
-43.2
0.743
-159.6
600
0.871
-176.7
2.161
37.1
0.027
-46.6
0.763
-161.5
650
0.878
-178.0
1.911
33.5
0.025
-49.5
0.781
-162.9
700
0.883
-179.4
1.701
30.4
0.024
-51.5
0.798
-164.6
750
0.890
179.4
1.522
27.3
0.022
-54.4
0.811
-166.1
800
0.897
178.3
1.368
24.4
0.021
-56.1
0.824
-167.7
850
0.899
177.0
1.238
21.7
0.019
-58.7
0.836
-169.0
900
0.905
176.0
1.123
19.3
0.018
-59.4
0.845
-170.3
950
0.907
175.1
1.025
17.1
0.016
-60.7
0.853
-171.4
1000
0.913
174.3
0.937
14.9
0.015
-62.1
0.861
-172.5
1050
0.915
173.2
0.859
12.9
0.013
-64.4
0.870
-173.5
1100
0.918
172.6
0.794
11.0
0.012
-64.9
0.874
-174.6
S11 S21 S12 S22
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
8
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have
a possibility to receive a burn to touch the operating product directly or touch the product
until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
his products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
details
regarding operation of these products from the formal specification sheet. For
copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
(RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and
In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about
predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
It is
recommended to utilize a sufficient sized heat-
sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products
lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
the
supplementary items in the specification sheet.
8.
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Publication Date : Oct．2011
9
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
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product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
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Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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