©2013 Integrated Device Technology, Inc.
FEBRUARY 2013
DSC-3089/08
1
Features
◆◆
◆◆
◆High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 15/20/25ns (max.)
◆◆
◆◆
◆Low-power consumption
◆◆
◆◆
◆Battery backup operation
– 2V data retention voltage (LA version only)
◆◆
◆◆
◆Produced with advanced CMOS high-performance
technology
◆◆
◆◆
◆CMOS process virtually eliminates alpha particle soft-error
rates
◆◆
◆◆
◆Input and output directly TTL-compatible
◆◆
◆◆
◆Static operation: no clocks or refresh required
◆◆
◆◆
◆Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin
Dip and 24-pin SOIC
◆◆
◆◆
◆Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized
as 2K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long as CS
remains HIGH. This capability provides significant system level power and
cooling savings. The low-power (LA) version also offers a battery backup
data retention capability where the circuit typically consumes only 1µW to
4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing for
operation.
The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin
600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance to MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
CS
A
0
A
10
I/O
0
I/O
7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
V
CC
,
CMOS Static RAM
16K (2K x 8-Bit) IDT6116SA
IDT6116LA
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings(1)
Truth Table(1)
Pin Description
Capacitance (TA = +25°C, f = 1.0 MHZ)
DIP/SOIC
Top View
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Inp ut Cap ac i tanc e V
IN
= 0V 8 pF
C
I/O
I/ O C ap ac itan ce V
OUT
= 0V 8 pF
3089 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
Symbol Rating Com'l. Mil. Unit
V
TERM
(2) Terminal Voltag e
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
T
A
Operating
Temperature 0 to + 70 -5 5 to +125
o
C
T
BIAS
Temperature
Under Bias -55 to +125 -65 to +135
o
C
T
STG
Storag e Tempe rature -55 to +125 -65 to +150
o
C
P
T
Po we r Dissipatio n 1.0 1.0 W
I
OUT
DC Outp ut Current 50 50 mA
3 089 tbl 04
Name Description
A
0
- A
10
Address Inputs
I/O
0
- I/O
7
Data Inp ut/ Outp ut
CS Chip Select
WE Write Enable
OE Outp ut Enab le
V
CC
Power
GND Ground
3089 tbl 01
NOTE:
1 . H = VIH, L = VIL, X = Don't Care.
Mode CS OE WE I/O
Standby H X X High-Z
Read L L H DATAOUT
Read L H H High-Z
Write L X L DATAIN
3 089 tbl 02
3089 drw 02
5
6
7
8
9
10
11
12
GND
1
2
3
4
24
23
22
21
20
19
18
17
P24-1
D24-2
D24-1
SO24-2
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
VCC
A9
WE
A10
I/O5
I/O 4
OE
16
15
14
13
A7
A6
I/O7
I/O6
CS
A8
I/O 2
I/O 3
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
3
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Recommended Operating
Temperature and Supply Voltage Recommended DC
Operating Conditions
NOTES:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. VIN must not exceed VCC +0.5V.
Grade Ambient
Temperature GND Vcc
Military -55
O
C to +125
O
C0V 5.0V ± 10%
Industrial -40
O
C to +85
O
C0V 5.0V ± 10%
Commercial 0
O
C to +70
O
C0V 5.0V ± 10%
3089 tbl 05
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5
(2)
V
GND Ground 0 0 0 V
V
IH
Inp ut Hig h Vo ltag e 2. 2 3. 5 V
CC
+0.5 V
V
IL
Inp ut Lo w Vo ltag e -0. 5
(1)
____
0.8 V
3 089 tbl 06
Symbol Parameter Test Conditions
IDT6116SA IDT6116LA
UnitMin. Max. Min. Max.
|I
LI
|Input Leakage Current V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COM' L & IND
____
____
10
5
____
____
5
2µA
|I
LO
| Output Leakage Current V
CC
= Max., CS = V
IH
,
V
OUT
= GND to V
CC
MIL.
COM' L & IND
____
____
10
5
____
____
5
2µA
V
OL
Outp ut Lo w Vo ltage I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4 V
V
OH
Outp ut Hi gh Vo ltag e I
OH
= -4mA, V
CC
= Min. 2.4
____
2.4
____
V
3089 tbl 07
123Symbol Parameter Power
6116SA15 6116SA20
6116LA20 6116SA25
6116LA25
Unit
Com'l
Only Com'l
& Ind Mil Com'l
& Ind Mil
I
CC1
Operating Power Supply Current
CS < V
IL
, Outputs Op en
V
CC
= Max., f
=
0
SA 105 105 130 100 90 mA
LA
_____
95 120 95 85
I
CC2
Dynamic Operating Current
CS < V
IL
, Outputs Op en
V
CC
= Max., f = f
MAX
(2)
SA 150 130 150 120 135 mA
LA
_____
120 140 110 125
I
SB
Standby Powe r Supply Current
(TTL Le ve l)
CS > V
IH
, Outp uts Op e n
V
CC
= Max., f = f
MAX
(2)
SA 40 40 50 40 45 mA
LA
_____
35 45 35 40
I
SB1
Full Stand by Powe r Supp ly Current
(CMOS Le ve l)
CS > V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA 2 2 10 2 10 mA
LA
_____
0.1 0.9 0.1 0.9
3089 tbl 08
4
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics(1) (continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)
Typ.
(1)
V
CC
@ Max.
V
CC
@
Symbol Parameter Test Condition Min. 2.0V 3.0V 2.0V 3.0V Unit
V
DR
V
CC
fo r Data Re tentio n
____
2.0
____ ____ ____ ____
V
I
CCDR
Data Re te nti on Curre nt MIL.
COM'L.
____
____
0.5
0.5 1.5
1.5 200
20 300
30 μA
t
CDR
(3)
Chip Des ele ct to Data
Re tentio n Time CS > V
HC
V
IN
> V
HC
or < V
LC
____
0
____ ____ ____
ns
t
R
(3)
Op eratio n Re cove ry Time t
RC
(2)
____ ____ ____ ____
ns
II
LI
IInput Leakage Current
____ ____ ____
22
μA
3089 tbl 10
lobmySretemaraPrewoP
53AS6116 53AL6116 54AS6116 54AL6116 55AS6116 55AL6116 07AS6116 07AL6116 09AS6116 09AL6116 021
AS6116 021AL6116 051AS6116 051AL6116
tinUylnOliMylnOliMylnOliMylnOliMylnOliMylnOliMylnOliM
I
1CC
ylppuSrewoPgnitarepO ,tnerruC SC <V
LI
,
nepOstuptuO
V
CC
f,.xaM=
=
0
AS09090909090909Am
AL58585858585858
I
2CC
gnitarepOcimanyD ,tnerruC SC <V
LI
,
nepOstuptuO
V
CC
f=f,.xaM=
XAM
)2(
AS51100100100100100109Am
AL501590909585858
I
BS
ylppuSrewoPybdnatS )leveLLTT(tnerruCSC >V
HI
nepOstuptuO,
V
CC
f=f,.xaM=
XAM
)2(
AS53525252525252Am
AL03020202525151
I
1BS
rewoPybdnatSlluF SOMC(tnerruCylppuS ,)leveL SC >V
CH
,
V
CC
V,.xaM=
NI
< V
CL
Vro
NI
> V
CH
0=f,
AS01010101010101Am
AL9.09.09.09.09.09.09.0
90lbt9803
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
5
Low VCC Data Retention Waveform
AC Test Conditions
DATA RETENTION MODE
V
CC
CS
t
CDR
4.5V V
DR
≥2V
V
DR
4.5V
t
R
V
IH
V
IH
3089 drw 03 ,
Figure 2. AC Test Load
(for tOLZ, tCLZ, tOHZ, tWHZ, tCHZ & tOW)
Figure 1. AC Test Load
*Including scope and jig.
3089 drw 04
30pF*
255Ω
5V
DATA
OUT
480Ω
,
5pF*
255Ω
5V
480Ω
DATAOUT
3089 drw 05
,
Input Pulse Levels
Inp ut Ris e /Fal l Time s
Input Timing Refe rence Leve ls
Outp ut Re fere nce Lev e ls
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
3089 tbl 11
6
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued)
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
lobmySretemaraP
51AS6116
)1(
02AS6116 02AL6116 52AS6116 52AL6116 53AS6116
)2(
53AL6116
)2(
tinU
.niM.xaM.niM.xaM.niM.xaM.niM.xaM
elcyCdaeR
t
CR
emiTelcyCdaeR51
____
02
____
52
____
53
____
sn
t
AA
emiTsseccAsserddA
____
51
____
91
____
52
____
53sn
t
SCA
emiTsseccAtceleSpihC
____
51
____
02
____
52
____
53sn
t
ZLC
)3(
Z-woLnituptuOottceleSpihC5
____
5
____
5
____
5
____
sn
t
EO
dilaVtuptuOotelbanEtuptuO
____
01
____
01
____
31
____
02sn
t
ZLO
)3(
Z-woLnituptuOotelbanEtuptuO0
____
0
____
5
____
5
____
sn
t
ZHC
)3(
Z-hgiHnituptuOottceleseDpihC
____
01
____
11
____
21
____
51sn
t
ZHO
)3(
Z-hgiHnituptuOotelbasiDtuptuO
____
8
____
8
____
01
____
31sn
t
HO
egnahCsserddAmorfdloHtuptuO5
____
5
____
5
____
5
____
sn
t
UP
)3(
emiTpUrewoPottceleSpihC0
____
0
____
0
____
0
____
sn
t
DP
)3(
emiTnwoDrewoPottceleseDpihC
____
51
____
02
____
52
____
53sn
21lbt9803
lobmySretemaraP
54AS6116
)2(
54AL6116
)2(
55AS6116
)2(
55AL6116
)2(
07AS6116
)2(
07AL6116
)2(
09AS6116
)2(
09AL6116
)2(
021AS6116
)2(
021AL6116
)2(
051AS6116
)2(
051AL6116
)2(
tinU
.niM.xaM.niM.xaM.niM.xaM.niM.xaM.niM.xaM.niM.xaM
elcyCdaeR
t
CR
emiTelcyCdaeR54
____
55
____
07
____
09
____
021
____
051
____
sn
t
AA
emiTsseccAsserddA
____
54
____
55
____
07
____
09
____
021
____
051sn
t
SCA
emiTsseccAtceleSpihC
____
54
____
05
____
56
____
09
____
021
____
051sn
t
ZLC
)3(
Z-woLnituptuOottceleSpihC5
____
5
____
5
____
5
____
5
____
5
____
sn
t
EO
dilaVtuptuOotelbanEtuptuO
____
52
____
04
____
05
____
06
____
08
____
001sn
t
ZLO
)3(
Z-woLnituptuOotelbanEtuptuO5
____
5
____
5
____
5
____
5
____
5
____
sn
t
ZHC
)3(
Z-hgiHnituptuOottceleseDpihC
____
02
____
03
____
53
____
04
____
04
____
04sn
t
ZHO
)3(
Z-hgiHnituptuOotelbasiDtuptuO
____
51
____
03
____
53
____
04
____
04
____
04sn
t
HO
egnahCsserddAmorfdloHtuptuO5
____
5
____
5
____
5
____
5
____
5
____
sn
31lbt9803
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
7
Timing Waveform of Read Cycle No. 2(1,2,4)
Timing Waveform of Read Cy cle No. 1(1,3)
Timing Waveform of Read Cycle No. 3(1,3,4)
NOTES:
1. WE is HIGH for Read cycle.
2. Device is continously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. OE is LOW.
5. Transition is measured ±500mV from steady state.
ADDRESS
OE
CS
t
RC
t
AA
t
OE
t
ACS
DATA
OUT
t
OH
t
OLZ (5)
t
CLZ (5)
t
OHZ (5)
t
CHZ (5)
3089 drw 06
DATA
VALID
t
PD
I
CC
I
SB
t
PU
V
CC
Supply
Currents
,
ADDRESS
t
RC
t
AA
t
OH
t
OH
DATA
OUT
3089 drw 07
PREVIOUS DATA VALID DATA VALID
,
CS
t
ACS
DATA
OUT
t
CLZ (5)
t
CHZ (5)
DATA VALID
3089 drw 08
,
8
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4 . The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)(con't)
54AS6116
)2(
54AL6116
)2(
55AS6116
)2(
55AL6116
)2(
07AS6116
)2(
07AL6116
)2(
09AS6116
)2(
09AL6116
)2(
021AS6116
)2(
021AL6116
)2(
051AS6116
)2(
051AL6116
)2(
lobmySretemaraP.niM.xaM.niM.xaM.niM.xaM.niM.xaM.niM.xaM.niM.xaMtinU
elcyCetirW
t
CW
emiTelcyCetirW54
____
55
____
07
____
09
____
021
____
051
____
sn
t
WC
etirW-fo-dnEottceleSpihC03
____
04
____
04
____
55
____
07
____
09
____
sn
t
WA
etirW-fo-dnEotdilaVsserddA03
____
54
____
56
____
08
____
501
____
021
____
sn
t
SA
emiTpu-teSsserddA0
____
5
____
51
____
51
____
02
____
02
____
sn
t
PW
htdiWesluPetirW52
____
04
____
04
____
55
____
07
____
09
____
sn
t
RW
emiTyrevoceRetirW0
____
5
____
5
____
5
____
5
____
01
____
sn
t
ZHW
)3(
Z-hgiHnituptuOotetirW
____
52
____
03
____
53
____
04
____
04
____
04sn
t
WD
palrevOemiTetirWotataD02
____
52
____
03
____
03
____
53
____
04
____
sn
t
HD
)4(
emiTetirWmorfdloHataD0
____
5
____
5
____
5
____
5
____
01
____
sn
t
WO
)4,3(
etirW-fo-dnEmorfevitcAtuptuO0
____
0
____
0
____
0
____
0
____
0
____
sn
51lbt9803
51AS6116
)1(
02AS6116 02AL6116 52AS6116 52AL6116 53AS6116
)2(
53AL6116
)2(
lobmySretemaraP.niM.xaM.niM.xaM.niM.xaM.niM.xaMtinU
elcyCetirW
t
CW
emiTelcyCetirW51
____
02
____
52
____
53
____
sn
t
WC
etirW-fo-dnEottceleSpihC31
____
51
____
71
____
52
____
sn
t
WA
etirW-fo-dnEotdilaVsserddA41
____
51
____
71
____
52
____
sn
t
SA
emiTpu-teSsserddA0
____
0
____
0
____
0
____
sn
t
PW
htdiWesluPetirW21
____
21
____
51
____
02
____
sn
t
RW
emiTyrevoceRetirW0
____
0
____
0
____
0
____
sn
t
ZHW
)3(
Z-hgiHnituptuOotetirW
____
7
____
8
____
61
____
02sn
t
WD
palrevOemiTetirWotataD21
____
21
____
31
____
51
____
sn
t
HD
)4(
emiTetirWmorfdloHataD0
____
0
____
0
____
0
____
sn
t
WO
)4,3(
etirW-fo-dnEmorfevitcAtuptuO0
____
0
____
0
____
0
____
sn
41lbt9803
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
9
Timing Wa vef orm of Write Cyc le No. 1 (WE Controlled Timing)(1,2,5,7)
Timing Wa vef orm of Write Cyc le No. 2 (CS Controlled Timing)(1,2,3,5,7)
NOTES:
1. WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap of a LOW CS and a LOW WE.
3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
4 . During this period, the I/O pins are in the output state and the input signals must not be applied.
5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.
6. Transition is measured ±500mV from steady state.
7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers
to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse
is the specified tWP. For a CS controlled write cycle, OE may be LOW with no degradation to tCW.
ADDRESS
DATA
OUT
CS
WE
DATA
IN
t
WC
t
AW
3089 drw 09
t
AS
t
WHZ(6)
(4)
t
DW
t
DH
(4)
t
OW
t
WR
t
CHZ (6)
t
WP(7)
(6)
PREVIOUS DATA VALID DATA
VALID
DATA VALID
(3)
,
CS
WE
DATA
IN
t
WC
t
AW
t
CW
t
WR (3)
t
DW
t
DH
t
AS
3089 drw 10
DATA VALID
ADDRESS
,
10
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Ordering Inf ormation — Military
Ordering Information — Commercial & Industrial
B
TD
D
20
25
35
45
55
70
90
120
150
SA
LA
Military (-55°C to +125°C)
Compliant to MIL-STD-883, Class B
300 mil CERDIP (D24-1)
600 mil CERDIP (D24-2)
Standard Power
Low Power
6116
Device Type
XX
Power
XXX
Speed
X
Package
X
Process/
Temperature
Range
3089 drw 11
Speed in nanoseconds
Blank
I
TP
SO
15*
20
25
SA
LA
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
300 mil Plastic DIP (P24-1)
300 mil Small Outline IC, Gull-Wing Bend (SO24-2)
Standard Power
Low Power
6116
Device Type
XX
Power
XXX
Speed
X
Package
X
Process/
Temperature
Range
3089 drw 12
Speed in nanoseconds
*Available in commercial temperature range and standard power only.
X
GGreen
Blank
8
Tube or Tray
Tape and Reel
X
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
11
Datasheet Document History
01/07/00 Updated to new format
Pg. 1, 3, 4, 10 Added Industrial Temperature range offerings
Pg. 9, 10 Separated ordering information into military, commercial, and industrial temperature range offerings
Pg. 11 Added Datasheet Document History
08/09/00 Not recommended for new designs
02/01/01 Removed "Not recommended for new designs"
12/30/03 Pg. 3,10 Corrected Industrial temp from -45C to -40C.
03/31/05 Pg. 10 Added "Restricted hazardous substance device" to ordering information.
11/15/06 Pg. 3 Changed power limits for commercial and industrial on speed grades 25ns and 35ns.
Pg.4 Changed power limits for commercial and industrial on speed grade 45ns. Refer to
PCN SR-0602-02.
04/26/11 Pg.1,2,3,4,6,10 Updated "Restricted hazardous substance device" to "Green". Obsoleted 24-pin SOJ, 24-pin 600 mil
and 35ns, 45ns for Industrial & Commercial.
05/01/13 Pg. 1 Description paragraph 4, package information. Changed text to read "The IDT6116SA/LA is packaged
in 24-pin 300mil plastic DIP, 24-pin 600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing
high board-level packing densities". Removed IDT in reference to fabrication.
Pg. 3 Updated DC Elec Chars (VCC = 5.0V ± 10%) table by adding industrial to the Test Conditions.
Updated DC Elec Chars (VCC = 5.0V ± 10%, VLC = 0.2V, VHC + VCC - 0.2V) table by removing the LA power
for the 15ns speed.
Pg. 10 Removed footnote "*Available in 300mil packaging only" from the Military ordering information.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
CORPORATE HEADQUARTERS for SALES:
6024 Silver Creek Valley Road 800-345-7015 or
San Jose, CA 95138 408-284-8200
fax: 408-284-2775
www.idt.com
for Tech Support:
sramhelp@idt.com
408-284-4532
