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Doc. No. 5SYA1612-03 July 03
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Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1700 V
DC collector current IC75 A
Peak collector current ICM Limited by Tvjmax 150 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 1300 V , VCEM ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 ° C 10 µs
Junction temperature Tvj -40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Doc. No. 5SYA1612-03 Jul y 03 page 2 of 5
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Collector (-emitter)
break down voltage V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C 1700 V
Tvj = 25 °C 2.1 2.3 2.7 V
Collector-emitter
saturation vo lta ge VCE sat IC = 75 A, VGE = 15 V Tvj = 125 °C2.6 V
Tvj = 25 °C 100 µA
Collecto r cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 800 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C-500 500 nA
Gate-emitter threshold voltage VGE(TO) IC = 3 mA, VCE = VGE, Tvj = 25 °C4.56.5V
Gate charge Qge IC = 75 A, VCE = 900 V, VGE = -15 ..15 V 630 nC
Input capacitance Cies 7.1
Output capacitance Coes 0.48
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C0.29 nF
Internal gate resistance RGint 5Ω
Tvj = 25 °C 170
Turn-on delay time td(on) Tvj = 125 °C 180 ns
Tvj = 25 °C 100
Rise time tr
VCC = 900 V, IC = 75 A,
RG = 15 Ω, VGE = ±15 V,
Lσ = 160 nH,
induct ive loa d Tvj = 125 °C 110 ns
Tvj = 25 °C 420
Turn-off delay time td(off) Tvj = 125 °C 500 ns
Tvj = 25 °C90
Fall time tf
VCC = 900 V, IC = 75 A,
RG = 15 Ω, VGE = ±15 V,
Lσ = 160 nH,
induct ive loa d Tvj = 125 °C 110 ns
Tvj = 25 °C18
Turn-on switching energy Eon
VCC = 900 V, IC = 75 A,
VGE = ±15 V, R G = 15 Ω,
Lσ = 160 nH,
induct ive loa d,
FWD: 5SLX12G1700 Tvj = 125 °C25
mJ
Tvj = 25 °C12
Turn-off switching energy Eoff
VCC = 900 V, IC = 75 A,
VGE = ±15 V, R G = 15 Ω,
Lσ = 160 nH,
induct ive loa d Tvj = 125 °C19mJ
Short circuit current ISC tpsc  V9GE = 15 V, Tvj = 125 °C,
VCC = 1300 V, VCEM 9 350 A
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Doc. No. 5SYA1612-03 Jul y 03 page 3 of 5
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Overall die L x W 11.9 x 11.9 mm
exposed
front metal L x W (except gate pad) 9.9 x 9.9 mm
gate pad L x W1.2 x 1.2 mm
Dimensions
thickness 210 ± 15 µm
front AISi1 4 µm
Metalli zat ion 1) back AI / Ti / Ni / Ag 1.2 µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA20 33-01 Apr i l 02.
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Emitter
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Doc. No. 5SYA1612-03 Jul y 03 page 4 of 5
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25
50
75
100
125
150
012345
VCE [V]
I
C
[A]
25 °C
VGE = 15 V
125 °C
-40 °C
0
25
50
75
100
125
150
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VGE [V]
I
C
[A]
VCE = 25 V
125 °C
25 °C
-40 °C
)LJ Typical onstate characteristics )LJ Typical transfer characteristics
0.000
0.010
0.020
0.030
0.040
0.050
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0.070
0.080
0 25 50 75 100 125 150
Ic [A]
Eon, Eoff [J]
Eon
Eoff
VCC = 900 V
RG = 15 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 160 nH
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
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RG [ohm]
Eon, Eoff [J]
Eoff
Eon
VCC = 900 V
IC = 75 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 160 nH
)LJ Typical switching characteristics vs
collector curren t )LJ Typical switching characteristics vs
gate resistor
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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$%%6ZLW]HUODQG/WG Doc. No. 5SYA1612-03 July 03
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Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
5
10
15
20
0.00.10.20.30.40.50.6
Qg [µC]
V
GE
[V]
VCC = 900 V
VCC = 1300
IC = 75 A
Tvj = 25 °C
0.1
1
10
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
)LJ Typical gate charge characteristics )LJ Typical capacitances vs
collector-emitter voltage