SI-FOTODETEKTOREN SILICON PHOTODETECTORS
23
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP (λ = 950 nm,
Ee = 1 mW/cm2,
VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 20 V,
RL = 50 Ω)
ns
Ordering code Fig.
2.2 SMT-Dioden 2.2 SMT-Diodes
2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes
BP 104 S
± 60
2.2 × 2.2 55 (≥ 40)
EV = 1000 lx
2 (≤ 30) 400 … 1100 10
Q62702-P1605 13
BPW 34 S
2.65 × 2.65 80 (≥ 50)
Q62702-P1602 14
BPW 34 S E9087
± 60
Q62702-P1790 15
Reverse Gullwing
BPW 34 BS 7.45
14.8 (>10.8)
E
e
= 1 mW/cm
2
,
VR = 5 V)
µA2 (≤ 30) 30%
(400 nm) 25 ns
RL = 50 ΩQ62702-P1601 14
SFH 2400 ± 60 1 × 1 10 (> 5.5)
EV = 1000 Lx
1 (≤ 5)
VR =20 V
400 … 1100 5 Q62702-P1794 16
SFH 2500 ± 15 1 × 170 (> 50)
λ = 870 nm
1 (≤ 5) 400 … 1100 5 Q62702-P5034 7
SFH 2505 ± 15 1 × 1 70 (> 50) 1 (≤ 5) 400 … 1100 5 Q62702-P5029 8
