BA 157........BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-15 (Plastic) Voltage 400 to 1000 V. Current 1.0 A. at 50C. 6.35 0.2 58.5 min. * Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350C. 3. Max. soldering time, 3,5 sec. 4. Do not bend lead at a point closer than 2 mm. to the body. * Diffused junction * High current capability * The plastic material carries U/L recognition 94 V-0 * Terminals: Axial Leads * Polarity: Color band denotes cathode Maximum Ratings, according to IEC publication No. 134 BA 157 BA 158 BA 159 400 600 1000 VRRM Peak recurrent and non recurrent reverse voltage (V) IF(AV) Forward current, R load at Tamb = 50 C 1A IFRM Recurrent peak forward current 5A IFSM 10 ms. peak forward surge current at Tj = 25 C 35 A trr Max. reverse recovery time from Tj Operating temperature range - 65 to + 125 C Tstg Storage temperature range - 65 to + 125 C IF = 0.5 A IR = 1 A IRR = 0.25 A 150 ns 250 ns Electrical Characteristics at Tamb = 25C VF Forward voltage drop at IF = 1 A 1.3 V IR Reverse current at VRRM at 25 oC 5A Cd Capacitance BA 158 Rthj-a Max. thermal resistance (I = 10 mm.) BA 157 BA 159 at 1 MHz and VRRM 2,2 pF 2 pF 1,8 pF 60 C/W BA150 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC 1000 FORWARD CURRENT DERATING CURVE 1.25 10 mm. - 10 mm. 500 Tj = 25 C + VF - 100 1 50 R-Load 0.8 0.75 IF 10 C-Load 5 0.50 1 0.25 0.5 0 0 0 0 0.4 0.8 1.2 25 50 75 100 125 150 175 1.6 Tamb, ambient temperature ( C) VF ' instantaneous forward voltage (V) TYPICAL JUNCTION CAPACITANCE THERMAL RESISTANCE 90 10 80 9 T j = 25C f= 1MHz 8 7 60 6 5 40 4 3 20 I 2 I 1 0 0 0 10 20 I, lead lenght (mm) 30 35 1 10 100 VR ' reverse voltage (V) 1000