BA 157
400
BA 157........BA 159
1 Amp. Fast Recovery Silicon Diodes
• Fast Recovery Diodes
• Diffused junction
• High current capability
• The plastic material carries
U/L recognition 94 V-0
• Terminals: Axial Leads
• Polarity: Color band denotes cathode
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 350°C.
3. Max. soldering time, 3,5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
Dimensions in mm. DO-15
(Plastic)
Maximum Ratings, according to IEC publication No. 134
Peak recurrent and non recurrent reverse voltage (V)
Forward current, R load at Tamb = 50 °C
Recurrent peak forward current
10 ms. peak forward surge current at T
j
= 25 °C
V
RRM
I
F(AV)
I
FRM
I
FSM
1 A
5 A
35 A
T
j
T
stg
Operating temperature range
Storage temperature range
– 65 to + 125 °C
– 65 to + 125 °C
Electrical Characteristics at Tamb = 25°C
V
F
Forward voltage drop at I
F
= 1 A
I
R
C
d
Capacitance
5 µ A
1.3 V
Reverse current at V
RRM
at 25
o
C
t
rr
Max. reverse recovery
time from
Voltage
400 to 1000 V.
Current
1.0 A. at 50°C.
= 0.5 A
= 1 A
= 0.25 A
150 ns 250 ns
R
thj-a
Max. thermal resistance (I = 10 mm.) 60° C/W
BA 157
BA 158
BA 159
at 1 MHz and V
RRM
2,2 pF
2 pF
1,8 pF
BA 158
600
BA 159
1000
58.5 min.
± 0.2
6.35
I
F
I
R
I
RR
100
50
1000
500
10
5
1
0.5
0
0 0.4 0.8 1.2 1.6
R-Load
C-Load
10 mm. - 10 mm.
1.25
1
0.8
0.75
0.50
0.25
0
Tamb, ambient temperature ( °C)
+ V -
F
T = 25 °C
j
IF
VF ' instantaneous forward voltage (V)
90
80
60
40
20
0
0 10 20 30 35
I, lead lenght (mm)
10
9
8
7
6
5
4
3
2
1
0
1 10 100 1000
T = 25°C
f= 1MHz
VR ' reverse voltage (V)
j
BA150
Characteristic Curves
I I
0 50 100 15025 75 125 175
TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING CURVE
THERMAL RESISTANCE TYPICAL JUNCTION CAPACITANCE
