General Description Features MagnaChip's IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.8V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10us at TC=100 Isolation Type Package conditioning electrical systems. These IGBT Module series are ideally suited for IH, High Applications Power inverters, Motors drives and other Induction Heating, Motor Drives, High Power Inverters Welding Machine, UPS applications where switching losses are significant portion of the total losses. 7DM-1 Equivalent Circuit E301932 Absolute Maximum Ratings @Tc = 25oC (Per Leg) Characteristics Symbol Rating Unit Collector-Emitter Voltage VCES 1200 V Gate- Voltage VGES 20 V 75 A 50 A ICM 100 A IF 50 A IFM 100 A PD 416 W TSC 10 us Operating Junction Temperature Tj -55~150 o Storage Temperature Range Tstg -55~125 o Viso 2500 V - 4 N.m TC=25oC Continuous Collector Current o IC TC=80 C Pulsed Collector Current(1) Diode Continuous Forward Current TC=80oC Diode Maximum Forward Current Power Dissipation TC=25oC Short Circuit Withstand Time Isolation Voltage AC 1minute Mounting screw Torque : M6 C C Note : (1) Repetitive rating : Pulse width limited by max. junction temperature March 2013.Version 3.0 1 MagnaChip Semiconductor Ltd. MPMB50B120RH NPT & Rugged Type 1200V IGBT Module MPMB50B120RH NPT & Rugged Type 1200V IGBT Module Characteristics Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0V 1200 - - Gate Threshold Voltage VGE(th) VCE = VGE, IC = 2mA 4.5 - 6.5 Collector Cut-Off Current ICES VCE = 1200V, VGE = 0V - - 1 mA Gate Leakage Current IGES VGE = 20V, VCE = 0V - - 250 nA TC=25 - 2.8 3.2 V TC=100 - 3.4 - V - 220 - - 25 - V Collector-Emitter saturation voltage VCE(sat) VGE = 15V, IC=50A Dynamic Characteristics Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 130 - Input Capacitance Cies - 3400 - Output Capacitance Coes - 370 - Reverse Transfer Capacitance Cres - 125 -- Turn-On Delay Time td(on) - 135 - tr - 60 - VCC = 600V, IC = 50A, - 450 - VGE =15V, - 70 - RG = 15, Inductive Load - 3.8 - mJ Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC = 600V, IC = 50A, VGE = 15V VCE = 30V, VGE = 0V, f = 1.0MHz nC pF ns Turn on Switching Loss Eon Turn off Switching Loss Eoff - 3.0 - mJ Total Switching Loss Ets - 6.8 - mJ Short Circuit Withstand Time Tsc 10 - - us TC=25 - 2.9 3.5 TC=100 - 2.3 - TC=25 - 70 - Vcc = 600V, VGE = 15V RG =15 @ Tc = 100 Electrical Characteristics of FRD @Ta =25oC(unless otherwise specified) Diode Forward Voltage Diode Reverse Recovery Time VFM IF=50A V trr ns 150 TC=100 Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr March 2013.Version 3.0 IF =50A,VR=600V di/dt = -100A/uS TC=25 - 3 - TC=100 - 10 - TC=25 - 105 - TC=100 - 750 - A nC 2 MagnaChip Semiconductor Ltd. MPMB50B120RH NPT & Rugged Type 1200V IGBT Module Electrical Characteristics of IGBT @TC =25oC(unless otherwise specified) Characteristics Symbol Min. Typ. Max. Unit Junction-to-Case(IGBT Part) RJC - - 0.3 /W Junction-to-Case(DIODE Part) RJC - - 0.6 /W Case-to-Sink ( Conductive grease applied) RCS 0.05 - - /W Weight - - 200 g Weight of Module March 2013.Version 3.0 3 MagnaChip Semiconductor Ltd. MPMB50B120RH NPT & Rugged Type 1200V IGBT Module Thermal Characteristics and Weight 150 Common Emitter TC=125 20V 15V 12V 100 Collector Current,IC[A] Collector Current,IC[A] Common Emitter Tc=25 10V 50 20V 15V 12V 100 10V 50 8V 8V 0 0 0 1 2 3 4 5 6 0 1 Collector - Emitter Voltage,VCE[V] Fig.1 Typical Output Characteristics TC=25 TC=125 50 0 1 2 3 4 5 12 5 6 10 8 6 4 2 0 6 0 100 Collector-Emitter Voltage,VCE[V] 200 300 Gate Charge, Qg[nC] Fig.3 Typical Saturation Voltage Characteristics Fig.4 Gate Charge Characteristics 4.0 6 4 VCE=600V,IC=50A TC=25 14 100 0 3 Fig.2 Typical Output Characteristics Gate-Emitter Voltage, V GE[V] Collector Current,I C[A] 150 2 Collector - Emitter Voltage,VCE[V] Eon(TC=25) Eon(TC=125) Eoff(TC=25) Eoff(TC=125) 3.5 5 3.0 Eoff[mJ] Eon[mJ] 4 3 2.5 2.0 2 1.5 1.0 1 0 0 5 10 15 20 25 10 15 20 RG[ ] RG[ ] Fig.5 Typical turn-on energy = f(RG) VGE = 15V, IC = 50A, VCE = 600V March 2013.Version 3.0 5 Fig.6 Typical turn-off energy = f(RG) VGE = 15V, IC = 50A, VCE = 600V 4 MagnaChip Semiconductor Ltd. 25 MPMB50B120RH NPT & Rugged Type 1200V IGBT Module 150 TJ = 150 VGE 15V TJ 150 PD=f(TC) 400 Power Dissipation[W] Collector Current,IC[A] 100 80 60 40 300 200 100 20 0 0 0 20 40 60 80 100 120 140 0 160 20 40 60 Case Temperatute, Tc[] Fig.7 Rated Current vs. Case Temperature Forward Current, IF[A] Thermal Response Zthjc[/W] 150 FRD IGBT 0.01 1E-3 1E-5 TC=25 1E-4 1E-3 0.01 0.1 1 120 140 160 TC=25 TC=125 100 50 0 0 10 1 2 3 4 Forward Drop Voltage, VF[V] Rectangular Pulse Duration Time[sec] Fig.9 Transient Thermal Impedance March 2013.Version 3.0 100 Fig.8 Power Dissipation vs. Case Temperature 1 0.1 80 TC[] Fig.10 Forward Characteristics 5 MagnaChip Semiconductor Ltd. 5 MPMB50B120RH NPT & Rugged Type 1200V IGBT Module 120 7DM-1 Dimensions are in millimeters, unless otherwise specified March 2013.Version 3.0 6 MagnaChip Semiconductor Ltd. MPMB50B120RH NPT & Rugged Type 1200V IGBT Module Package Dimension MPMB50B120RH NPT & Rugged Type 1200V IGBT Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. March 2013.Version 3.0 7 MagnaChip Semiconductor Ltd.