AP09N70P/R Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Dynamic dv/dt Rating BVDSS D Repetitive Avalanche Rated RDS(ON) Fast Switching ID GG Simple Drive Requirement 600/675V 0.75 9A S S Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 G type provide high blocking voltage to overcome voltage surge and sag in the D S toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 and TO-262 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. TO-220(P) G D TO-262(R) S Absolute Maximum Ratings Symbol Parameter - /A Rating Units 600/675 V VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25 Continuous Drain Current, VGS @ 10V 9 A ID@TC=100 Continuous Drain Current, VGS @ 10V 5 A V 30 1 IDM Pulsed Drain Current 40 A PD@TC=25 Total Power Dissipation 156 W 1.25 W/ 305 mJ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 9 A EAR Repetitive Avalanche Energy 9 mJ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 0.8 /W Rthj-a Thermal Resistance Junction-ambient Max. 62 /W Data & specifications subject to change without notice 200218032 AP09N70P/R Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Units VGS=0V, ID=1mA /- 600 - - V VGS=0V, ID=1mA /A 675 - - V BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A - - 0.75 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=4.5A - 4.5 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS= 30V - - 100 nA ID=9A - 44 - nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 11 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 12 - nC VDD=300V - 19 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=9A - 21 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 56 - ns tf Fall Time RD=34 - 24 - ns Ciss Input Capacitance VGS=0V - 2660 - pF Coss Output Capacitance VDS=25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Min. Typ. - - 9 A - - 40 A - - 1.5 V Source-Drain Diode Symbol Parameter IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode ) 1 VSD 3 Forward On Voltage Test Conditions VD=VG=0V , VS=1.5V Tj=25, IS=9A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25 , IAS=9A. 3.Pulse width <300us , duty cycle <2%. Ordering Code AP09N70P(/R)- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 675V Max. Units AP09N70P/R 10 10 T C =25 o C V G =10V T C =150 o C V G =6.0V 8 V G =10V V G =6.0V 8 V G =5.0V ID , Drain Current (A) ID , Drain Current (A) V G =5.0V 6 4 V G =4.5V 2 V G =4.5V 6 4 V G =4.0V 2 V G =4.0V V G =3.5V V G =3.5V 0 0 0 2 4 6 8 10 0 12 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D =4.5A 2.4 V G =10V 1.1 Normalized R DS(ON) Normalized BVDSS (V) 2 1 1.6 1.2 0.8 0.9 0.4 0.8 0 -50 0 50 100 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 150 -50 0 50 100 o T j , Junction Temperature ( C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP09N70P/R 10 9 150 7 6 100 PD (W) ID , Drain Current (A) 8 5 4 3 50 2 1 0 0 25 50 75 100 125 150 0 50 100 150 Tc , Case Temperature( o C) T c , Case Temperature ( C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 100 Normalized Thermal Response (R thjc) DUTY=0.5 10us 10 ID (A) 100us 1ms 1 10ms T c =25 o C Single Pulse 100ms 0.1 0.2 0.1 0.1 0.05 PDM 0.02 t SINGLE PULSE 0.01 T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 1 10 100 1000 V DS (V) Fig 7. Maximum Safe Operating Area 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP09N70P/R f=1.0MHz 10000 16 I D =9A 12 Ciss V DS =320V V DS =400V 10 V DS =480V C (pF) VGS , Gate to Source Voltage (V) 14 8 Coss 100 6 Crss 4 2 0 1 0 10 20 30 40 50 60 70 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 5 4 10 T j = 150 o C VGS(th) (V) 3 o IS (A) T j = 25 C 2 1 1 0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 T j , Junction Temperature ( o C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP09N70P/R VDS 90% RD VDS D 0.5x RATED VDS G RG TO THE OSCILLOSCOPE 10% + S 10 V VGS VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q