A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 30 V
BVCEO IC = 5.0 mA 15 V
BVEBO IE = 0.1 mA 2.5 V
ICBO VCB = 15 V 0.1 mA
IEBO VCE = 2.0 V 0.1 mA
hFE VCE = 5.0 V IC = 50 mA 50 200 ---
COB VCB = 10 V f = 1.0 MHz 1.4 2.0 pF
FTAU VCE = 10 V IC = 75 mA f = 1.0 GHz 5.0 GHz
NFmin
GNF
GU max
MSG
|S21|2
VCE = 10 V IC = 50 mA f = 500 MHz
13
2.0
15.5
17.8
20
15
3.0
dB
%
dB
dB
dB
NPN SILICON RF MICROWAVE TRANSISTOR
MRF5812
PACKAGE STYLE SO-8
DESCRIPTION:
The ASI MRF5812 is Designed f or
high curr ent , low power, low noise,
amplif ier s up t o 1. 0 GHz.
FEATURES:
• Low Noise – 2.5 dB @ 500 MHz
• Ftau – 5.0 GHz @ 10 V, 75 mA
• Cost Effective SO-8 package
MAXIMUM RATINGS
IC 200 mA
VCBO 30 V
VCEO 15 V
VEBO 2.5 V
PDISS 1.25 W @ TC = 25 °C
