Preliminary Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = 800V 37A 190m 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 37 A IDM TC = 25C, Pulse Width Limited by TJM 130 A IA EAS TC = 25C TC = 25C 44 3.5 A J dv/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns PD TC = 25C 780 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = 0.8 * VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 22A, Note 1 (c) 2012 IXYS CORPORATION, All Rights Reserved 50 A 2.5 mA 190 m High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100360A(04/12) IXFN44N80Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 VDS = 20V, ID = 22A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 37 S 9840 pF 960 pF 80 pF 0.14 50 ns 15 ns 50 ns 9 ns 185 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 22A RG = 1 (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 * VDSS, ID = 22A Qgd 67 nC 83 nC (M4 screws (4x) supplied) 0.16 C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 22A, -di/dt = 100A/s 1.8 13.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N80Q3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 45 110 VGS = 10V 100 40 VGS = 10V 90 35 9V 80 ID - Amperes ID - Amperes 30 25 20 8V 15 70 9V 60 50 40 30 8V 10 20 5 7V 10 0 7V 0 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 45 3.0 VGS = 10V 40 VGS = 10V 2.6 35 I D = 44A R DS(on) - Normalized 8V ID - Amperes 30 25 20 15 7V 2.2 I D = 22A 1.8 1.4 1.0 10 5 0.6 6V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 40 3.0 VGS = 10V 35 TJ = 125C 2.6 2.2 ID - Amperes R DS(on) - Normalized 30 1.8 TJ = 25C 25 20 15 1.4 10 1.0 5 0 0.6 0 10 20 30 40 50 60 70 ID - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN44N80Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 60 80 TJ = - 40C 70 50 60 TJ = 125C 30 g f s - Siemens ID - Amperes 40 25C - 40C 20 25C 50 40 125C 30 20 10 10 0 0 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 0 10 20 30 VGS - Volts 40 50 60 70 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 VDS = 400V 120 100 12 80 10 VGS - Volts IS - Amperes 14 60 I D = 22A I G = 10mA 8 6 TJ = 125C 40 4 TJ = 25C 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 250 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz 100 10,000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss 1,000 Coss 25s 250s 10 1 100 TJ = 150C 1ms TC = 25C Single Pulse Crss 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN44N80Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - C / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N80Q3(Q8)7-07-11