IXFN44N80Q3 - IXYS - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 800 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 800 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C 37 A

IDM TC= 25°C, Pulse Width Limited by TJM 130 A

IATC= 25°C 44A

EAS TC= 25°C 3.5 J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns

PDTC= 25°C 780 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOL 50/60 Hz, RMS, t = 1minute 2500 V~

IISOL ≤ 1mA, t = 1s 3000 V~

MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 800 V

VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V

IGSS VGS = ±30V, VDS = 0V ±200 nA

IDSS VDS = 0.8 • VDSS, VGS = 0V 50 μA

TJ = 125°C 2.5 mA

RDS(on) VGS = 10V, ID = 22A, Note 1 190 mΩ

HiperFETTM

Power MOSFET

Q3-Class

IXFN44N80Q3 VDSS = 800V

ID25 = 37A

RDS(on) ≤≤

≤≤

≤ 190mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 300ns

DS100360A(04/12)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Avalanche Rated

Features

zInternational Standard Package

zLow Intrinsic Gate Resistance

zminiBLOC with Aluminum Nitride

Isolation

zAvalanche Rated

zLow Package Inductance

zFast Intrinsic Rectifier

zLow RDS(on) and QG

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zDC-DC Converters

zBattery Chargers

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC Choppers

zTemperature and Lighting Controls

miniBLOC

E153432

G

D

S

G = Gate D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

Preliminary Technical Information

IXFN44N80Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 20V, ID = 22A, Note 1 22 37 S

Ciss 9840 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 960 pF

Crss 80 pF

RGi Gate Input Resistance 0.14 Ω

td(on) 50 ns

tr 15 ns

td(off) 50 ns

tf 9 ns

Qg(on) 185 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A 67 nC

Qgd 83 nC

RthJC 0.16 °C/W

RthCS 0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 44 A

ISM Repetitive, Pulse Width Limited by TJM 176 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr 300 ns

QRM 1.8 μC

IRM 13.4 A

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 22A

RG = 1Ω (External)

IF = 22A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXFN44N80Q3

Fi g . 1. Ou tpu t C h ar ac ter i sti cs @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

45

012345678

V

DS

- Volts

I

D

- Amper es

V

GS

= 10V

8

V

7

V

9V

Fi g . 2. Exten ded Ou tp ut C h ar acteri sti cs @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

110

0 5 10 15 20 25 30

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

7

V

8

V

9

V

Fi g . 3. Ou tpu t C h ar ac ter i sti cs @ T

J

= 125º C

0

5

10

15

20

25

30

35

40

45

024681012141618

V

DS

- Volts

I

D

- Ampere s

6

V

7V

V

GS

= 10V

8V

Fig. 4. R

DS(on)

No r mali z ed to I

D

= 22A Value vs.

Junction T emperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Deg re es Centigrad e

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 44A

I

D

= 22A

Fig. 5. R

DS(on)

Normalized to I

D

= 22A Valu e vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 102030405060708090100

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maxi mum Drain Current vs.

Case Temper ature

0

5

10

15

20

25

30

35

40

-50 -25 0 25 50 75 100 125 150

T

C

- Deg r ees Centi grad e

I

D

- Am peres

IXFN44N80Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Adm ittance

0

10

20

30

40

50

60

55.566.577.588.599.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

- 40ºC

25ºC

Fig. 8. Transconductan ce

0

10

20

30

40

50

60

70

80

0 10203040506070

I

D

- A mp e re s

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fi g. 9. F o r war d Vo l tage D r o p o f I n tri n si c D i o d e

0

20

40

60

80

100

120

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 12 5ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

2

4

6

8

10

12

14

16

0 50 100 150 200 250

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 400V

I

D

= 22A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1

10

100

1000

10 100 1,000

V

DS

- Volts

I

D

- Am pere s

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

1ms

R

DS(on)

Limit

250µs

25µs

IXFN44N80Q3

Fig. 13. Maximum Transient T herm al Impedance

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pul se Width - Seconds

Z

(th)JC

- º C / W