/TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E 62mmC-SerienModulmitgemeinsamenEmitter 62mmC-seriesmodulewithcommonemitter IGBT- PreliminaryData /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1200 V DC ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 300 480 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 600 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 1450 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V Gatethresholdvoltage IC = 12,0 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 1,70 1,90 2,15 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 2,80 C Internalgateresistor Tvj = 25C RGint 2,5 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 21,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,85 nF Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Turn-ondelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = 15 V RGon = 2,4 Tvj = 25C Tvj = 125C td on 0,16 0,17 s s Risetime,inductiveload IC = 300 A, VCE = 600 V VGE = 15 V RGon = 2,4 Tvj = 25C Tvj = 125C tr 0,04 0,045 s s Turn-offdelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = 15 V RGoff = 2,4 Tvj = 25C Tvj = 125C td off 0,45 0,52 s s Falltime,inductiveload IC = 300 A, VCE = 600 V VGE = 15 V RGoff = 2,4 Tvj = 25C Tvj = 125C tf 0,10 0,16 s s Turn-onenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = 15 V, di/dt = 6000 A/s RGon = 2,4 Tvj = 25C Tvj = 125C Eon 16,5 25,0 mJ mJ Turn-offenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = 15 V, du/dt = 4500 V/s RGoff = 2,4 Tvj = 25C Tvj = 125C Eoff 24,5 37,0 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,03 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:2.0 1 tP 10 s, Tvj = 125C 1200 A 0,085 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E PreliminaryData Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 300 A IFRM 600 A It 19000 As /CharacteristicValues min. typ. max. 1,65 1,65 2,15 Forwardvoltage IF = 300 A, VGE = 0 V IF = 300 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 300 A, - diF/dt = 6000 A/s (Tvj=125C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V IRM 210 270 A A Recoveredcharge IF = 300 A, - diF/dt = 6000 A/s (Tvj=125C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Qr 30,0 56,0 C C Reverserecoveryenergy IF = 300 A, - diF/dt = 6000 A/s (Tvj=125C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Erec 14,0 26,0 mJ mJ Thermalresistance,junctiontocase /Diode/perdiode RthJC Thermalresistance,casetoheatsink /Diode/perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,06 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:2.0 2 V V 0,15 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu Al2O3 -/terminaltoheatsink -/terminaltoterminal 29,0 23,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 23,0 11,0 mm Comperativetrackingindex CTI > 400 Thermalresistance,casetoheatsink //permodule Paste=1W/(m*K)/grease=1W/(m*K) Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature min. typ. max. RthCH 0,01 LsCE 20 nH RCC'+EE' 0,70 m Tstg -40 125 C K/W Mountingtorqueformodulmounting M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 - 5,0 Nm Weight G 340 g preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:2.0 3 /TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E PreliminaryData IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 600 600 500 500 400 400 IC [A] IC [A] Tvj = 25C Tvj = 125C 300 300 200 200 100 100 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=2.4,RGoff=2.4,VCE=600V 600 80 Tvj = 25C Tvj = 125C Eon, Tvj = 125C Eoff, Tvj = 125C 70 500 60 400 E [mJ] IC [A] 50 300 40 30 200 20 100 10 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:2.0 4 0 100 200 300 IC [A] 400 500 600 /TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E PreliminaryData IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=300A,VCE=600V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 150 0,1 Eon, Tvj = 125C Eoff, Tvj = 125C 135 ZthJC : IGBT 120 105 ZthJC [K/W] E [mJ] 90 75 60 0,01 45 30 i: 1 2 3 4 ri[K/W]: 0,00161 0,00484 0,04282 0,03573 i[s]: 0,0000119 0,002364 0,02601 0,06499 15 0 0 4 8 12 RG [] 16 20 0,001 0,001 24 IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=2.4,Tvj=125C 0,01 0,1 t [s] 1 10 Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 700 600 IC, Modul IC, Chip Tvj = 25C Tvj = 125C 600 500 500 400 IF [A] IC [A] 400 300 300 200 200 100 100 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:2.0 5 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] /TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E PreliminaryData Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=2.4,VCE=600V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=300A,VCE=600V 35 32 Erec, Tvj = 125C Erec, Tvj = 125C 28 30 24 25 20 E [mJ] E [mJ] 20 16 15 12 10 8 5 0 4 0 100 200 300 IF [A] 400 500 0 600 Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 ZthJC [K/W] ZthJC : Diode 0,1 i: 1 2 3 4 ri[K/W]: 0,00284 0,00852 0,07566 0,06298 i[s]: 0,0000119 0,002364 0,02601 0,06499 0,01 0,001 0,01 0,1 t [s] 1 10 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:2.0 6 0 4 8 12 16 RG [] 20 24 28 /TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E PreliminaryData /circuit_diagram_headline /packageoutlines j j n n i i preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:2.0 7 /TechnicalInformation IGBT- IGBT-modules FF300R12KT3_E PreliminaryData (www.infineon.com) Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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