1/9October 2002
STD60NF06
N-CHANNEL 60V - 0.014Ω - 60A DPAK
STripFET™ II POWER MOSF ET
(1) ISD≤ 60A, di / dt≤20 0 A/µs, V DD≤ 24V, Tj≤TjMAX
■TYPICAL RDS(on) = 0.014Ω
■EXCE PTIONAL dv/d t CAPABILITY
■100% AVALANCHE TESTED
■APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize i nput capacit ance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-D C
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■HIGH-EFFICIENCY DC-DC CONVERTERS
■UPS AND MOTOR CONTROL
■AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(●) Puls e width limited by safe operating area
TYPE VDSS RDS(on) ID
STD60NF06 60 V < 0.016 Ω60A
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 kΩ)60 V
VGS Gate- sourc e Voltage ± 20 V
IDDrain Current (continuous) at TC = 25°C 60 A
IDDrain Current (continuous) at TC = 100°C 42 A
IDM (
l
)Drain Current (pulsed) 240 A
PTOT Total Dissipation at TC = 25°C 110 W
Derating Factor 0.73 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
Tstg Storage Temperature – 55 to 175 °C
TjOperating Junction Temperature
DPAK
13
(Suffix “T4”)
INTERNAL SCHEMAT IC DIAGRAM
STD60NF06
2/9
THE RMAL DA TA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACT ERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
TlMaximum Lead Temperature For Soldering Purpose 275 °C
Symbol Paramet er Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max) 30 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V) 350 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 250 µA, VGS = 0 60 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating 1µA
V
DS = Max Rating, TC = 125 °C 10 µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 20V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 24V
R
DS(on) Static Drain-source On
Resistance VGS = 10 V, ID = 30 A 0.014 0.016 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =15 V , ID= 30 A 20 S
Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1810 pF
Coss Output Capacitance 360 pF
Crss Reverse Transfer
Capacitance 125 pF
3/9
STD60NF06
ELECTRICAL CHARACT ERISTICS (CONTINUED)
SWITCHIN G ON
SWITCHIN G OFF
SOURCE DRAIN DI ODE
Note: 1. Pul sed: Pul se duration = 300 µs, duty c ycle 1.5 % .
2. Pulse w i dth limi ted by safe operat i ng area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V, ID = 30 A
RG= 4.7Ω , VGS = 10 V
(see test circuit, Figure 3)
16 ns
trRise Time 108 ns
QgTotal Gate Charge VDD = 48 V, ID =60 A
VGS = 10 V 49 66 nC
Qgs Gate-Source Charge 18 nC
Qgd Gate-Drain Charge 14 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
tfTurn-off-Delay Time
Fall Time VDD = 30 V, ID = 30 A,
RG=4.7Ω, VGS = 10 V
(see test circuit, Figure 3)
43
20 ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross -over Time
Vclamp =48 V, ID = 60 A
RG=4.7Ω, VGS = 10 V
(see test circuit, Figure 3)
40
12
21
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 60 A
ISDM (2) Source-drain Current (pulsed) 240 A
VSD (1) Forward On Voltage ISD = 60 A, VGS = 0 1.3 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
73
182
5
ns
nC
A
STD60NF06
4/9
Safe Operating Area for DPAK
Static Drain-sour ce On Resistanc e
Thermal Impedence for DPAK
Transconductance
Transfer Characteristics
Output Characteristi cs
5/9
STD60NF06
Normali zed Gate Threshol d Vol tage vs
Temperature
So urce -drain Diode Forw ard Ch aracteristi cs
Gate Charge vs Gate-so urc e Voltage Capacitan ce Varia tions
Norma lized On Resistan ce vs Temp eratur e
STD60NF06
6/9
Fig. 5: Test Circuit For Inductive Lo ad Swi tching
And Diode Recovery Ti m es
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Induc tive Wav eformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/9
STD60NF06
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0o8o0o0o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
STD60NF06
8/9
TAPE AND R EEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions
are in millimeters
All dimensions are in millimeter s
9/9
STD60NF06
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.
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