PD - 9.1410A IRFP044N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.020 G ID = 53A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Units 53 37 180 120 0.77 20 230 28 12 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient http://store.iiic.cc/ Typ. Max. Units --- 0.24 --- 1.3 --- 40 C/W 8/25/97 IRFP044N Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 --- --- 2.0 16 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.017 --- --- --- --- --- --- --- --- --- --- 12 80 43 52 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 5.0 LS Internal Source Inductance --- 13 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1500 450 160 V(BR)DSS V(BR)DSS/TJ I GSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.020 VGS = 10V, ID = 29A 4.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 61 ID = 28A 13 nC VDS = 44V 24 V GS = 10V, See Fig. 6 and 13 --- VDD = 28V --- I D = 28A ns --- RG = 12 --- RD = 0.98, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 53 --- --- showing the A G integral reverse --- --- 180 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 29A, VGS = 0V --- 72 110 ns TJ = 25C, IF = 28A --- 210 310 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 410H Pulse width 300s; duty cycle 2%. Uses IRFZ46N data and test conditions RG = 25, IAS = 28A. (See Figure 12) ISD 28A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C http://store.iiic.cc/ IRFP044N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP I , D ra in -to -S o u rce C u rre n t (A ) D I , D ra in -to -S o u rc e C u rre n t (A ) D TOP 100 10 4.5 V 2 0 s PU LSE W ID TH TC = 2 5C 1 0.1 1 10 A 100 4 .5V 10 20 s P UL SE W IDTH TC = 17 5C 1 100 0.1 V D S , D rain-to-S ource V oltage (V ) R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D rain -to- S ou rce C ur ren t (A ) 2.5 TJ = 2 5 C TJ = 1 7 5 C 10 V DS = 2 5 V 2 0 s P U L SE W ID TH 4 5 6 7 8 A 100 Fig 2. Typical Output Characteristics 1000 1 10 V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics 100 1 9 10 A I D = 46 A 2.0 1.5 1.0 0.5 V G S = 10 V 0.0 V G S , Ga te-to-S o urce V oltage (V ) -60 -40 -20 0 20 40 60 80 T J , Junction T emperature (C) Fig 4. Normalized On-Resistance Vs. Temperature Fig 3. Typical Transfer Characteristics http://store.iiic.cc/ A 100 120 140 160 180 IRFP044N 20 V GS C is s C rs s C o ss C , C a p a c ita n c e (p F ) 2400 = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d V G S , G a te -to -S o u rce V o lta g e (V ) 2800 V D S = 44 V V D S = 28 V 16 C is s 2000 12 1600 C os s 1200 800 C rs s 400 0 10 8 4 FO R TEST C IRC U IT SEE FIG UR E 13 0 A 1 0 100 10 20 30 40 50 A 60 Q G , T otal G ate Charge (nC) V D S , Drain-to-Source V oltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 O P ER A TION IN TH IS A R EA L IM ITE D B Y R D S (o n) I D , D rain Current (A ) I S D , R everse D rain C urrent (A ) I D = 28 A 100 T J = 1 75 C T J = 25 C 10 VG S = 0 V 1 0.4 0.8 1.2 1.6 2.0 A 2.4 10 s 100 10 0 s 10 1m s 10 m s T C = 25 C T J = 17 5 C S in g le Pu lse 1 1 V S D , S ource-to-D rain Voltage (V ) A 10 100 V D S , D rain-to-Source V oltage (V ) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage http://store.iiic.cc/ IRFP044N RD VDS 60 VGS I D , Drain Current (A) D.U.T. RG 50 + -VDD 10V 40 Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 T C , Case Temperature 150 175 ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case http://store.iiic.cc/ 1 IRFP044N L VDS D.U.T. RG + V - DD IAS 10 V tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 500 TO P BO TTOM 400 ID 1 1A 20A 28 A 300 200 100 V D D = 2 5V 0 25 VDS A 50 75 100 125 150 175 Starting TJ , Junction T emperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V QG .2F .3F 10 V QGS D.U.T. QGD VGS VG 3mA IG Charge ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform http://store.iiic.cc/ + V - DS IRFP044N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS http://store.iiic.cc/ ISD * IRFP044N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B - 0 .25 (.0 1 0) M D B M -A 5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2 .5 0 (.0 8 9) 1 .5 0 (.0 5 9) 4 NOT ES : 5. 50 (.2 17 ) 4. 50 (.1 77 ) 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 3 -C - 1 4.8 0 (.5 8 3 ) 1 4.2 0 (.5 5 9 ) 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C A S 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) LEAD AS SIGN MENT S 1 2 3 4 - G ATE DRAIN SO URCE DRAIN Part Marking Information TO-247AC E X AM PLE : T HI S IS A N IRF 1010 E XAM P LW E IT : HT HAISS SISE MB AN LY IR F PE 30 IT H AS SE M BL Y LO T WCO DE 9B 1M LOT C ODE 3A 1Q A IN TE R NA T ION A L IN TE R N A TIO N A L R EC T IF IER R E C T IF IE R LO L O GGO O IRIR FPFE3 0 1010 9246 3A 19B Q 9 31M 02 A SMSBL EMY B LY A SSE L O TLO TC O DCO E DE A P AR M BM ERBE R P ATRTN UNU D A TE C OD E D A TE C O D E (Y YW W ) (YYW W ) Y Y = YE A R YY = YE AR = W WW W WW EE K E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 http://store.iiic.cc/ Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ http://store.iiic.cc/