IRFP044N
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 –– – –– – V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.017 ––– V/°C Reference to 25°C, I D = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.020 ΩVGS = 10V, ID = 29A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 16 ––– ––– S VDS = 25V, I D = 28A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– –– – 100 V GS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– –– – 61 I D = 28A
Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge –– – ––– 24 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– V DD = 28V
trRise Time ––– 80 ––– I D = 28A
td(off) Turn-Off Delay Time ––– 43 ––– R G = 12Ω
tfFall Time ––– 52 ––– R D = 0.98Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 1500 ––– VGS = 0V
Coss Output Capacitance ––– 450 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
5.0
IDSS Drain-to-Source Leakage Current
13
VDD = 25V, starting TJ = 25°C, L = 410µH
RG = 25Ω, IAS = 28A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 29A, VGS = 0V
trr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge ––– 210 310 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Source-Drain Ratings and Characteristics
A
53
180
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