© by SEMIKRON B 3 – 490898
V
RSM
V
RRM
(dv/dt)
cr
I
TRMS
(maximum values for continuous operation)
V
DRM
2300 A 2800 A
I
TAV
(sin. 180; T
case
= . . .; DSC)
VVV/µs 1465 A (58 °C) 1780 A (55 °C)
500
900
1300
1500
1700
1900
2300
2700
2900
400
800
1200
1400
1600
1800
2200
2600
2800
500
500
1000
1000
1000
1000
1000
1000
1000
S KT 1000/04 D
S KT 1000/08 E
S KT 1000/12 E
S KT 1000/14 E
S KT 1000/16 E
S KT 1000/18 E
S KT 1000/22 E L2
S KT 1000/26 E L2
S KT 1000/28 E L2
SKT 1200/04 D
–
SKT 1200/12 E
SKT 1200/14 E
SKT 1200/16 E
SKT 1200/18 E
–
–
–
Symbol Conditions SKT 1000 SKT 1200 Units
I
TAV
sin. 180; T
case
= 85 °C; DSC 1000 1200 A
I
TSM
i
2
t
T
vj
= 25 °C ; 10 m s
T
vj
= 125 °C; 10 ms
T
vj
= 25 ° C; 8,3 ... 10 m s
T
vj
= 125 °C; 8,3 . .. 10 ms
19 000
16 500
1 800
1 360
30 000
25 500
4 500
3 250
A
A
kA
2
s
kA
2
s
t
gd
t
gr
T
vj
= 2 5 °C I
G
= 1 A
di
G
/dt = 1 A/µs
V
D
= 0,67
.
V
DRM
typ. 1
typ. 2 µs
µs
(di/dt)
cr
I
H
I
L
t
q
f = 50 ... 60 Hz
T
vj
= 25 °C ; typ./max.
T
vj
= 2 5 °C; R
G
= 33 Ω; typ ./m a x.
T
vj
= 125 °C; typ.
125
250 / 500
0,5 / 2
100 .. . 250
A/µs
mA
A
µs
V
T
V
T(TO)
r
T
T
vj
= 2 5 °C; I
T
= 3600 A; max.
T
vj
= 125 °C
T
vj
= 125 °C
2,0
1,14
0,243
1,65
0,95
0,18
V
V
mΩ
I
DD
; I
RD
T
vj
= 125 °C; V
RD
= V
RRM
V
DD
= V
DRM
100 mA
V
GT
I
GT
V
GD
I
GD
T
vj
= 2 5 °C
T
vj
= 2 5 °C
T
vj
= 125 °C
T
vj
= 125 °C
5
250
0,25
10
V
mA
V
mA
R
thjc
R
thch
T
vj
T
stg
cont.;
si n. 180; DS C/SSC
rec. 120; DS C/ SSC
DSC/SSC
0,021
0,0225 / 0, 054
0,027 / 0,060
0,005 / 0,010
– 40 ... + 125
– 40 ... + 130
°C/W
°C/W
°C/W
°C/W
°C
°C
F
w
S I units
US units 22 .. . 2 5
5000 .. . 5600
550
kN
lbs.
g
Case B 14
Thyristors
SKT 1000
SKT 1200
Features
•
Hermetic metal cases with
ceram ic insulators
•
Ca psule packages for double
sided cooling
•
International standard cases
•
Off-state and reverse voltages
up to 2800 V
•
Amplifying gate
Typical Applications
•
DC mo tor control
(e. g. for machine tools)
•
Controlled rectifiers
(e. g. for battery charging)
•
A C contr o ller s
(e. g. for temperature control)
© by SEMIKRONB 3 – 50
© by SEMIKRON B 3 – 51
© by SEMIKRONB 3 – 52
Fig. 7 b Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time
Fig. 6 b On-state characteristics Fig. 7 a Power dissipation vs. on-st ate current
Fig. 9 Gate trigger char act eristics
© by SEMIKRON B 3 – 53
