ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A OD B .060 x 45 CHAMFER C E FEATURES: G * PG = 8.0 dB min. at 7.0 W/2300 MHz * Hermetic Microstrip Package * OmnigoldTM Metalization System * Diffused Ballasting L VCC 26 V PDISS TSTG -65 C to +200 C JC 8.5 C/W CHARACTERISTICS inches / mm inches / mm .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10536 O TC = 25 C NONETEST CONDITIONS SYMBOL MAXIMUM MINIMUM .028 / 0.71 G -65 C to +200 C NP A F 20.5 W @ TC = 25 C TJ I K DIM E 1.0 A J M MAXIMUM RATINGS IC F H BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICBO VCB = 22 V hFE VCE = 5.0 V Cob VCB = 22 V PG C VSWR VCC = 20 V PIN = 1.1 W RBE = 10 IC = 500 mA MINIMUM TYPICAL MAXIMUM 44 V 44 V 3.5 V 10 f = 1.0 MHz POUT = 7.0 W f = 2.3 GHz UNITS 2.5 mA 300 --- 10.0 pF 40 dB % --- 8.0 30:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/3 ERROR! REFERENCE SOURCE ASI2307 NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/3 ERROR! REFERENCE SOURCE ASI2307 NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 3/3