2N6193 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: * General purpose switching transistor * Low power * PNP silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N6193J) * JANTX level (2N6193JX) * JANTXV level (2N6193JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 9700 Reference document: MIL-PRF-19500/561 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 100 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 5 A Power Dissipation, TA = 25C Derate linearly above 25C PT 1 5.71 Thermal Resistance RJC 17.5 W mW/C C/W Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 C Copyright 2010 Rev. D SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N6193 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 50 mA Typ Max Units Volts 100 Collector-Base Cutoff Current ICBO1 VCB = 100 Volts 10 A Collector-Emitter Cutoff Current ICEO VCE = 100 Volts 100 A Collector-Emitter Cutoff Current ICEX1 ICEX2 VCE = 90Volts, VBE = 1.5Volts VCE =90Volts, VBE = 1.5Volts, TA = 150C 10 1 A mA Emitter-Base Cutoff Current IEBO1 VEB = 6 Volts 100 A On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.5 A, VCE = 2 Volts IC = 2 A, VCE = 2 Volts IC = 5 A, VCE = 2 Volts IC = 2 A, VCE = 2 Volts TA = -55C IC = 2 A, IB = 200 mA IC = 5 A, IB = 500 mA IC = 2 A, IB = 200 mA IC = 5 A, IB = 500 mA Min 60 60 40 12 Test Conditions VCE = 10 Volts, IC = 500 mA, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 240 1.2 1.8 0.7 1.2 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Symbol |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ 3 15 300 pF 1,250 pF Switching Characteristics Delay Time Rise Time Storage Time Fall Time Copyright 2010 Rev. D td tr ts tf IC = 2 A, IB1 = 200 mA IC = 2 mA, IB1=IB2 = 200 mA 100 100 2 200 ns s ns SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2