SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103SILICON SIGNAL TRANSISTORS SWITCHES T0-92 PACKAGE Vv tg (mA) Ig. (Torr! Ver (V) EB(OFF) Device Tore le (mA) (mA) (Ton) (Vv) 2N3903 225 2N3904 ' 250 2N3905 260 2N3906 300 2N4400 : : 255 2N4401 255 2N4402 255 2N4403 : 255 GES5368 ' 350 GES5369 350 GES5370 400 GES5371 400 GES5372 150 GES5373 160 GES5374 175 GES5375 175 GES6000 : 205 GES6002. 250 GES6004 180 GES6006 : 240 GES6001 155 GES6003. 200 GES6005 155 GES6007 200 GES6010 : GES6012 500 GES6014 400 GES6016 GES6011 GES6013 GES6015 GES6017 GES2221A GES2222A GES2906 GES2907 MPS3638 MPS3638A 110Silicon Transistors = i GES2221A,2A FEATURES: @ Performance comparable to hermetic units High gain @ Medium voltage absolute maximum ratings: Voltages Collector to Emitter Voro Collector to Emitter Vers Emitter to Base Vero Collector to Base Voso Current Collector Ic Collector (peak, pulsed 10 usec, = 2% duty cycle) Ic Dissipation Total Power (Tc S 25C) Pr Total Power (Ts S 25C) Pe Derate Factor (Tc = 25C) Derate Factor (Ta & 25C) Temperature Storage T sta Operating Ts Lead (46 +%4o from case for 10 sec.) Ti electrical characteristics: STATIC CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 10mA, In = 0) Emitter-Base Breakdown Voltage (Is = 10uA, Ic = 0) Collector-Base Breakdown Voltage (Ic == 10uA, Ip = 0) Collector-Emitter Breakdown Voltage (Ic = 10unA, Vee = 0) Collector-Emitter Saturation Votage (Ic = 150mA, In = 15mA) (Ic = 500mA, In = 50mA) Base-Emitter Saturation Voltage (Ic = 150mA, In = 15mA) (Ic = 500mA, Ig = 50mA) The General Electric GES2221A and GES2222A units are silicon, NPN, planar passi- vated, epitaxial devices specifically developed for high speed switching, amplifier and eore driver applications. e Excellent switching speeds e Low saturation voltages High frequency (Ts = 25C, unless otherwise specified) GES2221A GES2222A 40 40 5 75 400 800 1.0 0.360 10.0 3.6 65 to +150 65 to +125 +-260 Symbol Viserceo* Vismuso Visecso Vosxces Verwary* Vee war Vaxwatos Vex wan 1197 Volts Volts Volts Volts mA mA Watts Watts mW/C mW/C C C C (Ta = 25C, unless otherwise specified) Min. 40 75 40 0.6 (LLEMITTER 2.BASE 3. COLLECTOR 407) 482/Ol16/019| 3 3.160141 90/1 NOTES: 1. THREE LEADS 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE THIS SIDE. 3.(THREE LEADS) b2 APPLIES BETWEEN Ly AND Lo. $b APPLIES BETWEEN Lo AND I2.70 MM (.500") FROM THE SEATING PLANE. DIAMETER tS UN- CONTROLLED INL, AND BEYOND 12. 70MM (.500") FROM SEATING PLANE. GES2222A GES2221A Max. Volts _ Volts Volts Volts 0.3 Volts 1.0 Volts 1.1 Volts 2.0 VoltsGES2221A, 2A | STATIC CHARACTERISTICS (Continued) Symbol Min. Max. Min. Max. Forward Current Transfer Ratio GES2221A GES2222A (Vos = 1.0V, Ic = 150mA) hra* 20 50 _ (Ver = 10V, Ic = 0.1mA) hre 20 _ 35 _ (Vee = 10V, Tc = 1.0mA) hre 25 _ 50 _ (Vee = 10V, Ic = 10mA) hrr* 35 _ 15 _ (Vee = 10V, Ic = 150mA) hre* 40 120 100 300 (Vez = 10V, Ic = 500mA) hra* 20 _ 30 _ Collector Cutotf Current (Ves = 60V, I = 0) Icpo _ 10 _ 10 nA (Ves = 60V, Ie = 0, Ta = 100C) Topo _ 10 _ 10 nA Emitter-Base Reverse Current (Vzs = 3.0V, Ic = 0) Izzo 50 50 nA *Pulsed, 300 usec, = 2% duty cycle DYNAMIC CHARACTERISTICS Gain Bandwidth Product (Vez = 20V, Ic = 20mA, f = 100 MHz) f, 250 _ 300 MHz Collector-Base Capacitance (Ves = 10V, In = 0, f = 1 MHz) Cop _ 8.0 _ 8.0 pF Emitter-Base Capacitance (Ves = 0.5V, Ic = 0, f = 1 MHz) Co 25 _ 25 pF Collector-Base Time Constant (Ver = 20V, Ic = 20mA, f = 31.9 MHz) Yn'Ce _ 150 _ 150 psec Input Admittance (Ic = 20mA, Ven = 20V, f = 300 MHz) hie ~ 60 60 ohms SWITCHING CHARACTERISTICS Turn-On Time (Ic = 150mA, Vec = 30V, In: = 15mA, Figure 1) ton _ 35 _ 35 nsec Turn-Off Time (Ic = 150mA, Voc = 80V, Ia: = In = 15mA, Figure 2) tort _ 285 _ 285 nsec *Pulse width S300, sec., duty cycle = 2% TO Vin inal OSCILLOSCOPE Zin >100k22 +16V ty 22SEC Cin L4pF PW (200SEC RISE TIME <5nS DUTY CYCLE(2% = = = +30V = FIGURE 1. TEST CIRCUIT FOR DETERMINING TURN-ON TIME V TO IN 30V OSCILLOSCOPE ew Zjy 6 100k2 2'BSEC Cis 12 pF tr teS 7THSEC RISE TIME < 5nS +30V FIGURE 2. TEST CIRCUIT FOR DETERMINING TURN-OFF TIME 1198 ibe to 3