BD235 BD236
BD237 BD238
COMPLEMENTARY SILICON POWER TR ANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respec tiv ely.
®
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
321
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD235 BD237
PNP BD236 BD238
VCBO Collector-Base Voltag e (IE = 0) 60 100 V
VCER Collector-Base Voltage (RBE = 1KΩ)60 100 V
VCEO Collector-Emitter Voltage (IB = 0) 60 80 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 2 A
ICM Collector Peak Current (tp < 5 ms) 6 A
Ptot Total Dissipation at Tc = 25 oC25W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types volt age and current values a re negative.
1/5
THERMAL DATA
Rthj-case Thermal Resistance Junction-ca se Max 5 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCE = rated VCEO
VCE = rated VCEO Tc = 150 oC0.1
2mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
for BD235 / BD236
for BD237 / BD238 60
80 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 1 A IB = 0.1 A 0.6 V
VBE∗Base-Emitter Voltage IC = 1 A VCE = 2 V 1.3 V
hFE∗DC Current Ga in IC = 15 0 m A VCE = 2 V
IC = 1 A VCE = 2 V 40
25
fTTransition frequency IC = 250 mA VCE = 10 V 3 MHz
hFE1/hFE2∗Matched Pairs IC = 150 mA VCE = 2 V 1.6
∗ P ulsed: P ulse duratio n = 300 µs, duty cycle 1.5 %
Safe O perat ing Area Der ating Curve
BD235 BD236 BD237 BD 238
2/5
D C Current Ga in (NPN type)
C ollec tor -Emit ter Sat urat ion Voltage (NPN type)
Ba se-Em it ter Sat uration Volt age (NPN type)
DC Current Gain (PNP type)
Collector- Em itter Sat uration Volt age (PNP ty pe)
Collector-Base Capacitance (PNP type)
BD235 BD236 BD237 B D238
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
b 0.7 0.9 0.028 0.035
b1 0.40 0.65 0.015 0.025
C 2.4 2.7 0.094 0.106
c1 1.0 1.3 0.039 0.051
D 15.4 16.0 0.606 0.630
e 2.2 0.087
e3 4.4 0.173
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
I 1.27 0.05
O 0.3 0.011
V10
o
10
o
0016114/B
SOT- 32 ( T O-126) MEC HA NI CAL DATA
1: Base
2: Collector
3: Emi tter
BD235 BD236 BD237 BD 238
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird pa rties w hich ma y resu lt from i ts use. No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ification mentioned in this publication are
subject to change without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroel ectronics.
Th e ST l ogo is a tr ade mark of STMicroelectr onics
© 200 3 STMicroelect r o nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Ho ng Kong - India - Isr ael - Italy - Japa n - Malaysia - Malta - Morocco -
Singap ore - Spain - Swed en - Switzerland - Unite d Kingdom - Unit ed States.
http://www.st.com
BD235 BD236 BD237 B D238
5/5
