SEMiX 252GB126HD Absolute Maximum Ratings Symbol Conditions IGBT / () * 2 / ')1 * 267 267(+2 ()*. Trench IGBT Modules SEMiX 252GB126HD Units '(11 () * (31 " 41 * '51 " 811 " : (1 / '() * '1 ? () * (() " 41 * ')) " 811 " '111 " ;11 " A 31 ,,, B ')1 * A 31 ,,, B '() * 3111 ;11 < 9 = (1 < > '(11 # Values 9 SEMiX(R)2 Inverse Diode 2@ / ')1 * 2@67 2@67(+2@ 2@ '1 < , 7 / () * Module 267 Preliminary Data / Features ! Typical Applications " # $% & # Remarks # '()* +, - # ". ' , Characteristics Symbol Conditions IGBT 9 9 . 2 ; " 2 9 1 . 1 9 ') 2 ()*. # # 69 8 D 69 8 D 6/A 29H typ. max. Units ) ).4 ;.) 1.8 " '.( / '() * 1.C '.' / ()* 3.5 ;.8 D / '()* 5.8 C D '.5 (.') ( (.3) ' 7E 9 A4 ,,, B') min. ' F9 # / () * ')1 ". 9 ') / ()* (). 9 1 / () * , / '()* ;11 2 ')1" / '() * , '1.5 1.; @ @ 1.) @ '(11 811 3) (1 )51 ''1 G (' G 1.') IJ& GB 1 18-04-2007 SCH (c) by SEMIKRON SEMiX 252GB126HD Characteristics Symbol Conditions Inverse Diode @ 2@ ')1 "< 9 1 min. / () * , / '() * @1 @ (R) SEMiX 2 Trench IGBT Modules 2667 F 2@ ')1 " #J# 3;11 "J? 9 A') < ;11 6/AK ## typ. max. Units '.; '.4 '.; '.4 / () * ' '.' / '() * 1.4 1.C / () * 3 3.5 D / '() * ).8 ; D / '() * (;1 38 " ? '4 G , 1.(3 IJ& Module SEMiX 252GB126HD Preliminary Data Features ! Typical Applications " # $% & # Remarks # '()* +, # L 6MBM 6A ,. A '4 () * 1.5 D '() * ' D 1.13) IJ& # 7 N 7) 8 7 7; (.) ) - ) - ()1 Temperature sensor 6'11 '11* 6()) ND 1.3C8:)O ND H'11J'() 66'11 +PH'11J'()'JA'J'11Q< 8))1:(O I PIQ< H This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. - GB 2 18-04-2007 SCH (c) by SEMIKRON SEMiX 252GB126HD Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 18-04-2007 SCH (c) by SEMIKRON SEMiX 252GB126HD Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 18-04-2007 SCH (c) by SEMIKRON SEMiX 252GB126HD % 5 7R ( 9H 18-04-2007 SCH (c) by SEMIKRON