SEMiX®2
Trench IGBT Modules
SEMiX 252GB126HD
Preliminary Data
Features
 
  
   
 
   !
Typical Applications
"  #
$%
 &#
Remarks
  # 
'()* +,
-   #
GB
Absolute Maximum Ratings  ()*.    #
Symbol Conditions Values Units
IGBT
 / () * '(11
2/ ')1 * () * (31 "
41 * '51 "
267 267(+2 811 "
9 : (1
  ;11 < 9 = (1 <
 > '(11
/ '() * '1 ?
Inverse Diode
2@/ ')1 * () * (() "
41 * ')) "
2@67 2@67(+2@ 811 "
2@7 '1 < , / () * '111 "
Module
267 ;11 "
/ A 31 ,,, B ')1 *
 A 31 ,,, B '() *
 ". ' , 3111
Characteristics  ()*.    #
Symbol Conditions min. typ. max. Units
IGBT
9 9 . 2 ; " ) ).4 ;.)
2 9 1.  / () * 1.8 "
1 / () * ' '.(
/ '() * 1.C '.'
 9 ') / ()* 3.5 ;.8 D
/ '()* 5.8 C D
 2 ')1 ". 9 ') / ()*, '.5 (.')
/ '()*, ( (.3)
 '1.5 @
  (). 9 1 ' 7E 1.; @
 1.) @
F99 A4 ,,, B') '(11 
# 811 
69 8 D  ;11 3) 
 2 ')1" (1 G
#  69 8 D / '() * )51 
''1 
(' G
6/A  29H 1.') IJ&
SEMiX 252GB126HD
1 18-04-2007 SCH © by SEMIKRON
SEMiX®2
Trench IGBT Modules
SEMiX 252GB126HD
Preliminary Data
Features
 
  
   
 
   !
Typical Applications
"  #
$%
 &#
Remarks
  # 
'()* +,
-   #
GB
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
@  2@ ')1 "< 9 1 / () *, '.; '.4
/ '() *, '.; '.4
@1 / () * ' '.'
/ '() * 1.4 1.C
@/ () * 3 3.5 D
/ '() * ).8 ; D
2667 2@ ')1 " / '() * (;1 "
F #J# 3;11 "J? 38 ?
 9 A') <  ;11 '4 G
6/AK  ## 1.(3 IJ&
Module
L '4 
6MBM ,. A  () * 1.5 D
 '() * ' D
6A  # 1.13) IJ&
7  N 7) 8 ) -
7  7; (.) ) -
()1
Temperature sensor
6'11 '11* 6()) ND 1.3C8:)O ND
H'11J'() 66'11+PH'11J'()'JA'J'11Q<
PIQ< H
8))1:(O I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
SEMiX 252GB126HD
2 18-04-2007 SCH © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SEMiX 252GB126HD
3 18-04-2007 SCH © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge
SEMiX 252GB126HD
4 18-04-2007 SCH © by SEMIKRON
 7R (
% 9H
SEMiX 252GB126HD
5 18-04-2007 SCH © by SEMIKRON