IRFR9220/9221 P-CHANNEL IRFU9220/9221 POWER MOSFETS FEATURES + Lower Rosion) + Improved inductive ruggedness * Fast switching times Rugged polysilicon gate cell structure Lower input capacitance + Extended safe operating area Improved high temperature reliability D-PAK 1.Gate 2.Drain 3.Source IRFR9220/9221 I-PAK PRODUCT SUMMARY Part Number Vos Rbsjon) lo IRFR9220/U9220 ~200V -1.59 -3.6A4 IRFR9221/U9221 -150V -1.52 -3.6A 1.Gate 2.Drain 3.Source IRFU9220/9221 MAXIMUM RATINGS Characteristic Symbol IRFR9220/U9220 IRFR9221/U9221 Unit Drain-Source Voltage (1} Voss -200 -150 Vde Drain-Gate Voltage (Ras=1.0M @)(1) VoGR -200 -150 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25 C ID -3.6 Adc Continuous Drain Current Tc=100 C ID -2.3 Adc Drain Current - Pulsed (3) IDM -14 Adc Gate Current - Pulsed lem +15 Adc Single Pulsed Avalanche Energy (4) Eas 290 mJ Avalanche Current las -3.6 A Total Power Dissipation @ Tc=25 C P 42 Watts ) Derate above 25 C 0.33 W/C Operating and Storage > . Ty, Tstg -55 to +150 Cc Junction Temperature Range Maximum Lead Temp. for Soldering TL 300 C Purposes, 1/8" from case for 5 seconds Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature (4) L=35mH, Vad=-50V, Re=25 2, Starting Tu=25C ELECTRONICS Me 7964142 00248701 4e0m IRFR9220/9221 P-CHANNEL IRFU9220/9221 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVpss | Drain-Source Breakdown Voltage IRFR9220/U9220 -200} - - Vas=0V, ln=-2502A IRFR9221/U9221 -150| - - Vastth) | Gate Threshold Voltage -2.0 - -4.0 Vos=Ves, ID=-250A \ass Gate-Source Leakage Forward - - | -100) nA | Vas=-20V lass | Gate-Source Leakage Reverse - - 100 | nA | Vas=20V IDss Zero Gate Voltage Drain Current - - 250 | #A | Vos=-Max. Rating, Vas=0V - - | 1000} #A | Vps=-0.8 Max. Rating, Vas=0V, Tc=125C Rpston) | Static Drain-Source On Resistance(2) - - 4.5 Q | Ves=-10V, ip=-1.8A Qs Forward Transconductance (2) 11 - - ov | Vos>-50V, lp=-1.8A Ciss Input Capacitance - 405 - pF Coss | Output Capacitance - | 85.5 - pF | Vas=0V, Vos=-25V, f=1.0MHz Crss Reverse Transfer Capacitance - 30 - pF tajon) | Turn-On Delay Time - 8.8 13 ns | Vop=-0.5BVoss, ln=-3.6A, Zo=18.0 tr Rise Time - 27 41 ns_| (MOSFET switching times are essentially tao) | Turn-Off Delay Time - 7.3 11 ns | independent of operating temperature) tf Fall Time - 19 29 ns Qg Total Gate Charge - - 38.0 | nC | Ves=-10V, ln=-3.6A, Vos=-0.8 Max. Rating, (Gate-Source Pluse Gate-Drain) (Gate charge is essentially independent of Qgs Gate-Source Charge - 5.3 - nC | operating temperature) Qad Gate-Drain ("Miller") Charge - | 18.3 - nc THERMAL RESISTANCE Symbol Characteristics All Units Remark Rinse Junction-to-Case MAX 3.0 KAW Rtncs Case-to-Sink TYP 1.7 KAW | Mounting surface flat, smooth and greased Rina Junction-to-Ambient MAX 110 KAN | Free Air Operation Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width<300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature an ELECTRONICS ME 7564142 002870e 367 163IRFR9220/9221 IRFU9220/9221 P-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions Is Continuous Source Current 7 . -a6| a | Modified MOSFET - (Body Diode) symbol showing the AG) Pulse Source Current integral reverse e $ ism - - -14 | A | P-N junction rectifier (Body Diode) (3) Vsp | Diode Forward Voltage (2) - - | -7.0 | V_ | Ty=25C, Is=-3.6A, Vas=0V tr Reverse Recovery Time - 140} 290 | ns | Ts=25C, IF=-3.6A, diF/dt=100A/uS Notes : (1) Ti=25C to 150C lo, ORAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) (2) Pulse test : Pulse width <300zs, Duty Cycle<2% (8) Repetitive rating : Pulse width limited by max. junction temperature 80us Pulse Test -w Ves= Q - -40 -60 100 Vos, ORAIN-TO-SQURCE VOLTAGE (VOLTS) Typical Output Characteristics -120 80ys Pulse Test I 0-2 4 o ~18 20 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics ~B8 -10 -12 -14 +1 Ip, DRAIN CURRENT (AMPERES) tp, DRAIN CURRENT (AMPERES) 1 a 1 Oo -0.2 -0.1 1.0 -2.0 -.0 -10 - BOyus Pulse Test Vos>lpan)% RDsjony Max. T= -55C 1 T/=125C = T, 525C T5125C -2 -4 -6 -8 -10 -1 -14 Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics IN IS LIMITED BY Rosjon) Tc = 25C T,=150C MAX SINGLE PULSE =50 -100 =1000 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area ein ELECTRONICS 164 = 964142 0028703 273a IRFR9220/9221 IRFU9220/9221 P-CHANNEL POWER MOSFETS Zinsct/Rithuc, NORMALIZEO EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) gts, TRANSCONDUCTANCE (SIEMENS) BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 5 10 2 5 2 5 107 4. Duty Factor. =f a. 2. Per Unil Base=Raic=1 0 Deg. CW 3. Ty Te=Pom Zine (t) 2 5 10" 2 5 t1, SQUARE WAVE PULSE DURATION (SECONDS) ; Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration BOys Pulse Test | Vos? loon) X Rostonymax Ty= 56C y= 25C Ty= 125C = ~6 8 Ip, DRAIN CURRENT (AMPERES) -10 Typical Transcounductance Vs. Drain Current 0.75 ~40 0 40 80 120 Ty, JUNCTION TEMPERATURE (C} Breakdown Voltage Vs. Temperature 160 fon, REVERSE DRAIN CURRENT (AMPERES) Rosion, ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Tg= 150C Te = 28C 8 -2 -4 -6 - ~10 -12 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage Vac=10V to=-1.8A 40 0 40 160 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature ELECTRONICS 165 MB 79641242 0026704 13TIRFR9220/9221 P-CHANNEL IRFU9220/9221 POWER MOSFETS 500 Vag=0 f=1MHz i Ciss= Cgs+Cgd, Cds SHORTED Crss=Cgd Coss = Cs + 98 Cod : 400 Cgs+Cgd =Cds + Cod for} 3S a C, CAPACITANCE (pF) Vas, GATE-TO-SOURCE VOLTAGE {VOLTS) Crss 0 =10 20 = ~40 50 0 8 6 24 32 40 Vos, DFAIN-TO-SQURCE VOLTAGE (VOLTS) . Qo, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-to-Source Voltage Rosion) MEASURED WITH PULSE 2.048 DURATION. INITIAL T)=25C (HEATING EFFECT OF 2.0us PULSE IS MINIMAL) Ip, DRAIN CURRENT {AMPERES} Ves= 20V Ros tom DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 20 75 1 1 150 ip, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature a E < 2 z g - a a a g a O 20 40 60 80 100 120 140 160 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve 166 ELECTRONICS ME 75b4L42 0028705 O7b a