Data Sheet 1 2000-07-01
Double Differential Magneto Resistor FP 410 L (4 x 80) FM
Version 2.0
Dimensions in mm
Features
Double differential magneto resistor
on same carrier
Accurate intercenter spacing
High operating temperature range
High output voltage
Compact construction
Available in strip form for automatic
assembly
Type Ordering Code
FP 410 L (4 ×80) FM Q65410-L80E (taped)
FP 410 L (4 ×80) FM Q65110-L80F (singular)
Typical Applications
Incremental angular encoders
Detection of sense of rotation
Detection of speed
Detection of position
Data Sheet 2 2000-07-01
FP 410 L (4 x 80) FM
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as Micropack.
The basic resistance of each of the magnetic resistors is 80 . The two series coupled
pairs of magnetic resistors are actuated by an external magnetic field or can be biased
by a permanent magnet and actuated by a soft iron target.
Data Sheet 3 2000-07-01
FP 410 L (4 x 80) FM
Absolute Maximum Ratings
Electrical Characteristics (TA = 25 °C)
Parameter Symbol Limit Values Unit
Operating temperature TA 40 / + 175 °C
Storage temperature Tstg 40 / + 185 °C
Power dissipation1) Ptot 1000 mW
Supply voltage2) (B = 0.3 T) VIN 8V
Thermal conductivity
attached to heatsink
in still air Gth case
Gth A
20
2
mW/K
Basic resistance
(I 1 mA; B = 0 T) R01-3
R04-6
110220
Center symmetry3) M 6%
Relative resistance change
(R = R01-3,R04-6 at B = 0 T)
B = ± 0.3 T4)
B = ± 1 T
RB/R0> 1.7
> 7
Temperature coefficient
B = 0 T
B = ± 0.3 T
B = ± 1 T
TCR 0.16
0.38
0.54
%/K
%/K
%/K
1) Corresponding to diagram Ptot = f(Tcase)
2) Corresponding to diagram VIN = f(Tcase)
3)
4) 1 T = 1 Tesla = 104 Gauss
MR01 2R02 3
R01 2
--------------------------------=× 100% for R01-2 > R02-3
MR04 5R05 6
R04 5
--------------------------------=× 100% for R04-5 > R05-6
Data Sheet 4 2000-07-01
FP 410 L (4 x 80) FM
Max. power dissipation versus
temperature
Ptot = f(T), T = Tcase,TA
Typical MR resistance
versus temperature
R01-3, 4-6 = f(TA), B = Parameter
Maximum supply voltage
versus temperature
VIN 1-3, 4-6 = f(T), B = 0.3 T
Typical MR resistance
versus magnetic induction B
R01-3, 4-6 = f(B), TA = 25 °C