FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET
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Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.2 mH, IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 18 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDP18N50 FDP18N50 TO-220 Tube N/A N/A 50 units
FDPF18N50 FDPF18N50 TO-220F Tube N/A N/A 50 units
FDPF18N50T FDPF18N50T TO-220F Tube N/A N/A 50 units
Symbol Parameter Conditions Min. Typ. Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 500 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C--0.5--V/°C
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0--5.0V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 9 A -- 0.220 0.265 Ω
gFS Forward Transconductance VDS = 40 V, ID = 9 A -- 25 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1 MHz
-- 2200 2860 pF
Coss Output Capacitance -- 330 430 pF
Crss Reverse Transfer Capacitance -- 25 40 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250 V, ID = 18 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-- 55 120 ns
trTurn-On Rise Time -- 165 340 ns
td(off) Turn-Off Delay Time -- 95 200 ns
tfTurn-Off Fall Time -- 90 190 ns
QgTotal Gate Charge VDS = 400 V, ID = 18 A,
VGS = 10 V
(Note 4)
-- 45 60 nC
Qgs Gate-Source Charge -- 12.5 -- nC
Qgd Gate-Drain Charge -- 19 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 18 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 18 A,
dIF/dt =100 A/μs
-- 500 -- ns
Qrr Reverse Recovery Charge -- 5.4 -- μC