SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
PARTMARKING DETAIL
BBY31 – S1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage VBR 28.0 V IR = 10µA
Reverse current IR10
1.0 nA
µAVR = 28V
VR = 28V, Tamb
= 85°C
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance Cd
1.8
17.5
11.5 2.8
pF
pF
pF
VR = 1V, f=1MHz
VR = 3V, f=1MHz
VR = 25V, f=1MHz
Capacitance Ratio Cd / Cd5.0 VR = 3V/25V, f=1MHz
Series Resistance rd1.2 Ωf=470MHz at the value
of VR at which Cd=9pF
Spice parameter data is available upon request for this device
BBY31
1
3
2
SOT23
1
3
