SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated pellet chip junction * Available in uni-directional and bi-directional Available * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMB (DO-214AA) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. PRIMARY CHARACTERISTICS VBR (uni-directional) 6.4 V to 49.1 V VBR (bi-directional) 6.4 V to 49.1 V VWM 5.0 V to 40 V PPPM (uni-directional) 1000 W MECHANICAL DATA PPPM (bi-directional) 800 W IFSM (uni-directional only) 100 A TJ max. 150 C Polarity Uni-directional, bi-directional Package SMB (DO-214AA) Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) SYMBOL uni-directional bi-directional PPPM (1)(2) VALUE 1000 800 UNIT W Peak pulse current with a 10/1000 s waveform IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only IFSM (2) 100 A TJ, TSTG -55 to +150 C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 24-Jan-2019 Document Number: 88422 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor UNI-DIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) BREAKDOWN VOLTAGE VBR AT IT (1) (V) SMB10J5.0A 1AE 6.40 7.07 10 5.0 1000 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 108.7 SMB10J6.0A 1AG 6.67 7.37 10 6.0 1000 97.1 10.3 SMB10J6.5A 1AK 7.22 7.98 10 6.5 500 89.3 11.2 SMB10J7.0A 1AM 7.78 8.60 10 7.0 200 83.3 12.0 SMB10J7.5A 1AP 8.33 9.21 1.0 7.5 100 77.5 12.9 SMB10J8.0A 1AR 8.89 9.83 1.0 8.0 50 73.5 13.6 SMB10J8.5A 1AT 9.44 10.4 1.0 8.5 20 69.4 14.4 SMB10J9.0A 1AV 10.0 11.1 1.0 9.0 10 64.9 15.4 SMB10J10A 1AX 11.1 12.3 1.0 10 5.0 58.8 17.0 SMB10J11A 1AZ 12.2 13.5 1.0 11 5.0 54.9 18.2 SMB10J12A 1BE 13.3 14.7 1.0 12 5.0 50.3 19.9 SMB10J13A 1BG 14.4 15.9 1.0 13 1.0 46.5 21.5 SMB10J14A 1BK 15.6 17.2 1.0 14 1.0 43.1 23.2 SMB10J15A 1BM 16.7 18.5 1.0 15 1.0 41.0 24.4 SMB10J16A 1BP 17.8 19.7 1.0 16 1.0 38.5 26.0 SMB10J17A 1BR 18.9 20.9 1.0 17 1.0 36.2 27.6 SMB10J18A 1BT 20.0 22.1 1.0 18 1.0 34.2 29.2 SMB10J20A 1BV 22.2 24.5 1.0 20 1.0 30.9 32.4 SMB10J22A 1BX 24.4 26.9 1.0 22 1.0 28.2 35.5 SMB10J24A 1BZ 26.7 29.5 1.0 24 1.0 25.7 38.9 SMB10J26A 1CE 28.9 31.9 1.0 26 1.0 23.8 42.1 SMB10J28A 1CG 31.1 34.4 1.0 28 1.0 22.0 45.4 SMB10J30A 1CK 33.3 36.8 1.0 30 1.0 20.7 48.4 SMB10J33A 1CM 36.7 40.6 1.0 33 1.0 18.8 53.3 SMB10J36A 1CP 40.0 44.2 1.0 36 1.0 17.2 58.1 SMB10J40A 1CR 44.4 49.1 1.0 40 1.0 15.5 64.5 DEVICE TYPE DEVICE MARKING CODE MIN. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) V = 3.5 V at I = 50 A (uni-directional only) F F Revision: 24-Jan-2019 Document Number: 88422 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor BI-DIRECTIONAL ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE SMB8J5.0CA SMB8J6.0CA SMB8J6.5CA SMB8J7.0CA SMB8J7.5CA SMB8J8.0CA SMB8J8.5CA SMB8J9.0CA SMB8J10CA SMB8J11CA SMB8J12CA SMB8J13CA SMB8J14CA SMB8J15CA SMB8J16CA SMB8J17CA SMB8J18CA SMB8J20CA SMB8J22CA SMB8J24CA SMB8J26CA SMB8J28CA SMB8J30CA SMB8J33CA SMB8J36CA SMB8J40CA DEVICE MARKING CODE 1AE 1AG 1AK 1AM 1AP 1AR 1AT 1AV 1AX 1AZ 1BE 1BG 1BK 1BM 1BP 1BR 1BT 1BV 1BX 1BZ 1CE 1CG 1CK 1CM 1CP 1CR BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 6.40 7.25 6.67 7.37 7.22 7.98 7.78 8.60 8.33 9.21 8.89 9.83 9.44 10.4 10.0 11.1 11.1 12.3 12.2 13.5 13.3 14.7 14.4 15.9 15.6 17.2 16.7 18.5 17.8 19.7 18.9 20.9 20.0 22.1 22.2 24.5 24.4 26.9 26.7 29.5 28.9 31.9 31.1 34.4 33.3 36.8 36.7 40.6 40.0 44.2 44.4 49.1 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 MAXIMUM REVERSE LEAKAGE AT VWM ID (A) 2000 2000 1000 400 200 100 40 20 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 87.0 77.7 71.4 66.7 62.0 58.8 55.6 51.9 47.1 44.0 40.2 37.2 34.5 32.8 30.8 29.0 27.4 24.7 22.5 20.6 19.0 17.6 16.5 15.0 13.8 12.4 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient (1) Typical thermal resistance, junction to lead SYMBOL RJA RJL VALUE 72 20 UNIT C/ W Note Mounted on minimum recommended pad layout (1) ORDERING INFORMATION (Example) PREFERRED P/N SMB10J5.0A-E3/52 SMB10J5.0A-M3/52 SMB10J5.0A-E3/5B SMB10J5.0A-M3/5B SMB10J5.0AHE3_A/H (1) SMB10J5.0AHM3_A/H (1) SMB10J5.0AHE3_A/I (1) SMB10J5.0AHM3_A/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.106 52 750 7" diameter plastic tape and reel 0.106 5B 3200 13" diameter plastic tape and reel 0.106 H 750 7" diameter plastic tape and reel 0.106 I 3200 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 24-Jan-2019 Document Number: 88422 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 000 10 SMB10J5.0 SMB10J40A 1 SMB8J5.0C SMB8J40CA 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s 1.0 s 10 s Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Bi-Directional 100 s 1.0 ms 10 10 ms 1 100 10 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 100 Transient Thermal Impedance (C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 10 1.0 0 0 25 50 75 100 125 150 175 0.01 200 0.1 1 10 100 1000 TJ - Initial Temperature (C) tp - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Forward Surge Current Revision: 24-Jan-2019 Document Number: 88422 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) MIN. 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) Max. 0.220 REF. 0.220 (5.59) 0.205 (5.21) Revision: 24-Jan-2019 Document Number: 88422 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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